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Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS 2 and MoSe 2 monolayers encapsulated in boron nitride by magneto-photoluminescence spectroscopy in magnetic fields up to 30 T. The experiments performed in transverse magnetic field reveal a brightening of the spin-forbidden dark excitons in MoS 2 monolayer: we find that the dark excitons appear at 14 meV below the bright ones. Measurements performed in tilted magnetic field provide a conceivable description of the neutral exciton fine structure. The experimental results are in agreement with a model taking into account the effect of the exchange interaction on both the bright and dark exciton states as well as the interaction with the magnetic field. Excitons control the optical properties of transition metal dichalcogenide monolayers. Here, the authors measure the exciton fine structure of MoS 2 and MoSe 2 monolayers encapsulated in hBN in magnetic fields up to 30 T, and observe a brightening of the spin-forbidden dark excitons in MoS 2 .

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial—tens of teslas or more—due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of monolayer MoS 2 , MoSe 2 , MoTe 2 , and WS 2 in very high magnetic fields to 91 T. We follow the diamagnetic shifts and valley Zeeman splittings of not only the exciton’s 1 s ground state but also its excited 2 s , 3 s , … , n s Rydberg states. This provides a direct experimental measure of the effective (reduced) exciton masses and dielectric properties. Exciton binding energies, exciton radii, and free-particle bandgaps are also determined. The measured exciton masses are heavier than theoretically predicted, especially for Mo-based monolayers. These results provide essential and quantitative parameters for the rational design of opto-electronic van der Waals heterostructures incorporating 2D semiconductors. The rational design of optoelectronic devices based on 2D materials relies on quantitative knowledge of their excitonic properties. Here the authors perform circularly-polarized absorption spectroscopy on monolayer MoS 2 , MoSe 2 , MoTe 2 and WS 2 in magnetic fields up to 91 T, and derive the effective exciton masses, binding energies, radii, dielectric properties, and free-particle bandgaps of these monolayer semiconductors

The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe2 and WSe2 . In this work, we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T=4K . Narrow optical transition linewidths are also observed in encapsulated WS2 , WSe2 , and MoSe2 MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.

Excitons, Coulomb bound electron–hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe 2 monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy; we also observe the excited A-excitons state 2 s . Detuning of the continuous wave, low-power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal. Monolayer transition metal dichalcogenides host excitons, bound electron-hole pairs that play a pivotal role in optoelectronic applications relying on strong light-matter interaction. Here, the authors unveil the spectroscopic signature of boson scattering of two-dimensional excitons in monolayer WSe 2 .

Transitions metal dichalcogenides (TMDs) are direct gap semiconductors in the monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20% for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states inMoSe2andMoTe2monolayers have so far been elusive because of their low oscillator strength and strong inhomogeneous broadening. Here, we show that encapsulation in hexagonal boron nitride results in an emission line width of theA:1sexciton below 1.5 meV and 3 meV in ourMoSe2andMoTe2monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with theA:1stransition, and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this nonlinear optical process. We discuss the origin of the upconversion effect. Our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band, thus generating high-energy excitons with small wave vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation, and resonant Raman scattering, confirming their origin as excited excitonic states in monolayer thin semiconductors.

Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy; we also observe the excited A-excitons state 2s. Detuning of the continuous wave, low-power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal.

Pressure is a powerful tool for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we demonstrate magnetic imaging of a van der Waals magnet under high pressure with sub-micron spatial resolution, using a two-dimensional (2D) quantum sensing platform based on boron-vacancy ( V B − ) centers in hexagonal boron nitride (hBN). We first analyze the performances of V B − centers in hBN for magnetic imaging under pressures up to few GPa, and we then use this 2D sensing platform to investigate the pressure-dependent magnetization in micrometer-sized flakes of 1 T -CrTe 2 . Besides providing a new path for studying pressure-induced phase transitions in van der Waals magnets, this work also opens up interesting perspectives for exploring the physics of 2D superconductors under pressure via local measurements of the Meissner effect. NV center-based quantum sensors integrated into diamond anvil cells have enabled magnetic imaging under high pressure but are less suited for studying magnetic van der Waals materials. Here, the authors demonstrate magnetic imaging of micrometer-sized flakes of 1T-CrTe2 under high pressure using spin-centers in a thin hBN layer.

The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices based on the electric field manipulation and transport of electron spin. Here we demonstrate that the spin diffusion length in a GaAs quantum well can be electrically controlled. Through the measurement of the spin diffusion coefficient by spin grating spectroscopy and of the spin relaxation time by time-resolved optical orientation experiments, we show that the diffusion length can be increased by more than 200% with an applied gate voltage of 5 V. These experiments allow at the same time the direct simultaneous measurements of both the Rashba and Dresselhaus spin-orbit splittings. An important parameter in spintronics is the spin-diffusion length: the length over which the travelling electron spin keeps its orientation. Here, the authors show control over this length in quantum wells using a gate voltage, which also allows for an elegant measurement of the spin-orbit terms.

The deposition of misfolded proteins, including amyloid beta plaques and neurofibrillary tangles is the histopathological hallmark of Alzheimer’s disease (AD). The glymphatic system, a brain-wide network of perivascular pathways that supports interstitial solute clearance, is dependent upon expression of the perivascular astroglial water channel aquaporin-4 (AQP4). Impairment of glymphatic function in the aging rodent brain is associated with reduced perivascular AQP4 localization, and in human subjects, reduced perivascular AQP4 localization is associated with AD diagnosis and pathology. Using human transcriptomic data, we demonstrate that expression of perivascular astroglial gene products dystroglycan ( DAG1 ), dystrobrevin ( DTNA ) and alpha-syntrophin ( SNTA1 ), are associated with dementia status and phosphorylated tau (P-tau) levels in temporal cortex. Gene correlation analysis reveals altered expression of a cluster of potential astrocytic endfoot components in human subjects with dementia, with increased expression associated with temporal cortical P-tau levels. The association between perivascular astroglial gene products, including DTNA and megalencephalic leukoencephalopathy with subcortical cysts 1 ( MLC1 ) with AD status was confirmed in a second human transcriptomic dataset and in human autopsy tissue by Western blot. This suggests changes in the astroglial endfoot domain may underlie vulnerability to protein aggregation in AD.

The possibility of polarizing conducting charges in a material by blocking those with a specific spin direction could lead to efficient spintronic devices. It is now shown that spin polarized-defects in a non-magnetic semiconductor can deplete electrons with opposite spins and turn the semiconductor into an efficient spin filter operating at room temperature. Generating, manipulating and detecting electron spin polarization and coherence at room temperature is at the heart of future spintronics and spin-based quantum information technology 1 , 2 , 3 , 4 . Spin filtering, which is a key issue for spintronic applications, has been demonstrated by using ferromagnetic metals 5 , 6 , 7 , 8 , diluted magnetic semiconductors 9 , 10 , quantum point contacts 11 , quantum dots 12 , carbon nanotubes 13 , multiferroics 14 and so on. This filtering effect was so far restricted to a limited efficiency and primarily at low temperatures or under a magnetic field. Here, we provide direct and unambiguous experimental proof that an electron-spin-polarized defect, such as a Ga i self-interstitial in dilute nitride GaNAs, can effectively deplete conduction electrons with an opposite spin orientation and can thus turn the non-magnetic semiconductor into an efficient spin filter operating at room temperature and zero magnetic field. This work shows the potential of such defect-engineered, switchable spin filters as an attractive alternative to generate, amplify and detect electron spin polarization at room temperature without a magnetic material or external magnetic fields.