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VO2 undergoes a metal‐insulator transition (MIT) at ≈70 °C, which induces large variations in its electrical and wavelength‐dependent optical properties. These features make VO2 a highly sought‐after compound for optical, thermal, and neuromorphic applications. To foster the development of VO2‐based devices for the microelectronic industry, it is also imperative to integrate VO2 on silicon. However, high lattice mismatch and the formation of silicates at the interface between VO2 and Si degrade the quality and functionality of VO2 films. Moreover, VO2's polymorphic nature and stable VO phases pose integration issues. To address these challenges, the MIT of VO2 thin films integrated on Si with a complementary metal‐oxide semiconductor‐compatible HfxZr1−xO2 (HZO) buffer layer is investigated. Using in situ high‐resolution X‐ray diffraction and synchrotron far‐infrared spectroscopy, combined with multiscale atomic and electronic structure characterizations, it is demonstrated that VO2 on the HZO buffer layer exhibits an unusually low thermal hysteresis of ≈4 °C. In these results, the influence of strain on M2 phase nucleation, which controls the hysteresis, is unraveled. Notably, the rate of phase transition is symmetric and does not change for the heating and cooling cycles, implying no incorporation of defects during cycling, and highlighting the potential of an HZO buffer layer for reliable operation of VO2‐based devices. Strain disrupts the first‐order M1R phase transition in VO2, resulting in an M1M2R transition. This study not only underlines the potential of an HfxZr1−xO2 buffer layer for reliable VO2‐based devices but also correlates strain and hysteresis width to M2 phase. This analysis is enabled by complementary postmortem and in situ structural, electrical, and optical characterizations.

We report the growth of epitaxial Pb(Zr0.54Ti0.46)O3 (PZT) thin films on yttria-stabilized zirconia buffered silicon substrates by pulsed laser deposition. We demonstrate a full in plane epitaxy of the buffer layer, showing a RMS roughness of less than 0.3 nm for a 120 nm thick layer. This buffer layer allows the growth of fully (110) textured oxide conducting SrRuO3 and subsequent functional oxide layers. Here the Pb(Zr,Ti)O3 oxide was chosen to demonstrate its possible integration in piezoelectric microelectromechanical systems on silicon.

To emphasise the role of outer and inner membranes in the resistance of Pseudomonas aeruginosa to bactericidal activity of various disinfectants, spheroplasts and whole cells were compared. Spheroplasts are more sensitive than whole cells to quaternary ammonium compounds such as didecyl dimethyl ammonium bromide (DDAB) and C16-benzalkonium chloride. The outer membrane acts as a barrier to prevent these disinfectants from entering the cell. It seems to have no influence on activities of smaller molecules such as C12, C14-benzalkonium chlorides and sodium dichloroisocyanurate. For tri-sodium phosphate, the presence of outer membrane emphasized the action of the molecule. Moreover, resistance of DDAB-adapted spheroplasts to bactericidal activity of DDAB is higher than the resistance of non-adapted spheroplasts. This suggests that the inner membrane could also play a role in resistance to DDAB.

In this paper, the potentialities of the manganese oxide La sub( 0.7)Sr sub( 0.3)MnO sub( 3) (LSMO) for the realization of sensitive room temperature thermometers and magnetic sensors are discussed. LSMO exhibits both a large change of the resistance versus temperature at its metal-to-insulator transition (about 330 K) and low field magnetoresistive effects at room temperature. The sensor performances are described in terms of signal-to-noise ratio in the 1 Hz - 100 kHz frequency range. It is shown that due to the very low 1/f noise level, LSMO based sensors can exhibit competitive performances at room temperature.

Various buffer layers have been investigated in order to improve the crystalline quality of NbN ultra-thin films. The structural properties, the thickness, the surface morphology of 5–10 nm NbN films have been studied by different techniques. Uncertainty on thickness measurements in this range and the relation between NbN film quality and gain bandwidth are discussed in the framework of their use in Hot Electron Bolometers (HEB).

In this paper, the potentialities of the manganese oxide La0.7Sr0.3MnO3 (LSMO) for the realization of sensitive room temperature thermometers and magnetic sensors are discussed. LSMO exhibits both a large change of the resistance versus temperature at its metal-to-insulator transition (about 330 K) and low field magnetoresistive effects at room temperature. The sensor performances are described in terms of signal-to-noise ratio in the 1 Hz - 100 kHz frequency range. It is shown that due to the very low 1/f noise level, LSMO based sensors can exhibit competitive performances at room temperature.

In this paper, the potentialities of the manganese oxide La^sub 0.7^Sr^sub 0.3^MnO^sub 3^ (LSMO) for the realization of sensitive room temperature thermometers and magnetic sensors are discussed. LSMO exhibits both a large change of the resistance versus temperature at its metal-to-insulator transition (about 330 K) and low field magnetoresistive effects at room temperature. The sensor performances are described in terms of signal-to-noise ratio in the 1 Hz - 100 kHz frequency range. It is shown that due to the very low 1/f noise level, LSMO based sensors can exhibit competitive performances at room temperature. [PUBLICATION ABSTRACT]

Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions. The effect of annealing on the sheet resitance of unpatterned layers was measured. A Pt-based multilayered metallization for the PMOS devices was proposed and tested for the monolithic integration of PMOS devices and YBCO sensors on the same silicon substrate. The best results were obtained with a Pt/Ti/Mo-silicide structure showing (0.472 \\Omega_{\\Box}) interconnect sheet resistivity and \\( 2 \\times 10^{-4} \\Omega \\cdot cm^{2}\\) specific contact resistivity after annealing for (60) minutes at (700^{\\circ})C in (0.5) mbar O(_{2}) pressure.