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Human action recognition has been applied in many fields, such as video surveillance and human computer interaction, where it helps to improve performance. Numerous reviews of the literature have been done, but rarely have these reviews concentrated on skeleton-graph-based approaches. Connecting the skeleton joints as in the physical appearance can naturally generate a graph. This paper provides an up-to-date review for readers on skeleton graph-neural-network-based human action recognition. After analyzing previous related studies, a new taxonomy for skeleton-GNN-based methods is proposed according to their designs, and their merits and demerits are analyzed. In addition, the datasets and codes are discussed. Finally, future research directions are suggested.

Sepsis‐associated acute lung injury (ALI) is a life‐threatening condition in intensive care units with high mortality. LncRNAs have been confirmed to participate in the underlying pathogenesis of septic ALI. This study investigated the biological functions of lncRNA CDKN2B‐AS1 in septic ALI and its potential mechanism.BEAS‐2B cells were challenged with lipopolysaccharide (LPS) and mice were subjected to caecal ligation and puncture (CLP) to induce septic ALI in vitro and in vivo. The expression levels of CDKN2B‐AS1, LIN28B, HIF‐1α, and pyroptosis‐related molecules were assessed by qRT–PCR or Western blotting. The production of IL‐1β and IL‐18 was detected by ELISA. BEAS‐2B cell pyroptosis was examined by flow cytometry. The interaction between LIN28B and CDKN2B‐AS1/HIF‐1α was validated by RIP and RNA pull‐down assays. Colocalization of CDKN2B‐AS1 and LIN28B was observed by FISH. ALI was determined by HE staining, the lung wet‐to‐dry (W/D) weight ratio, inflammatory cell numbers, and total protein concentration in bronchoalveolar lavage fluid (BALF). Caspase‐1 expression in the lung tissues was examined by immunohistochemical staining.CDKN2B‐AS1 was upregulated in BEAS‐2B cells after LPS stimulation. CDKN2B‐AS1 knockdown inhibited pyroptosis in LPS‐exposed BEAS‐2B cells in vitro and the lung tissues of septic mice in vivo. Mechanistically, CDKN2B‐AS1 interacted with LIN28B to enhance HIF‐1α stability. Rescue experiments showed that HIF‐1α overexpression counteracted the inhibitory effect of sh‐CDKN2B‐AS1 on LPS‐induced pyroptosis. CDKN2B‐AS1 bound to LIN28B to trigger NLRP3‐mediated pyroptosis by stabilizing HIF‐1α, which promoted sepsis‐induced ALI. CDKN2B‐AS1 might be a novel therapeutic target for this disease.

Impact ionization, which supports carrier multiplication, is promising for applications in single photon detection1 and sharp threshold swing field effect devices2. However, initiating the impact ionization of avalanche breakdown requires a high applied electric field in a long active region, which hampers carrier multiplication with a high gain, low bias and superior noise performance3,4. Here we report the observation of ballistic avalanche phenomena in sub-mean free path (MFP) scaled vertical InSe/black phosphorus (BP)5–9 heterostructures10. We use these heterojunctions to fabricate avalanche photodetectors (APDs) with a sensitive mid-infrared light detection (4 μm wavelength) and impact ionization transistors with a steep subthreshold swing (<0.25 mV dec–1). The devices show a low avalanche threshold (<1 V), low noise figure and distinctive density spectral shape. Our transport measurements suggest that the breakdown originates from a ballistic avalanche phenomenon, where the sub-MFP BP channel support the lattice impact ionization by electrons and holes and the abrupt current amplification without scattering from the obstacles in a deterministic nature. Our results provide new strategies for the development of advanced photodetectors1,11,12 via efficient carrier manipulation at the nanoscale.Ballistic avalanche phenomena in vertical InSe/BP heterostructures enable the demonstration of high-performance avalanche photodetectors and impact ionization transistors.

Online reviews and customer Q&As have emerged as two vital forms of electronic word-of-mouth (eWOM) that significantly influence consumer decisions in e-commerce. Yet, a comprehensive understanding of the individual and combined roles of these eWOM types in shaping market dynamics remains elusive. This study addresses this research gap by tracking and analyzing three months of eWOM and sales data for 120 laptops on Amazon, comprising 7,205 online reviews, 6,365 customer Q&A questions, and 7,419 answers. Leveraging the Panel Vector Autoregression (PVAR) model and STATA16.0 software, we unravel the intricate dynamics between online reviews, customer Q&As, and laptop sales. The empirical results reveal distinctive influence mechanisms of online reviews and customer Q&As on product sales, with review volume and answer valence positively affecting sales. Importantly, answer volume was found to stimulate online reviews and enhance their valence. Our study elucidates the interplay among online reviews, customer Q&As, and product sales, underscoring the need for future research on multi-type eWOM. Further, the insights gleaned offer valuable guidance for online platforms and retailers to strategize their eWOM management.

This study addressed the scalar field quasinormal ringing behavior of black holes. We investigated scalar field perturbations in Bardeen black hole spacetime in 5‐dimensional Einstein–Gauss–Bonnet (EGB) gravity. Using the sixth‐order Padé approximation and the finite difference method, we computed the frequency of quasinormal modes (QNMs) in the spacetime background. The calculations demonstrated that the real part of the QNMs ω increased, whereas the imaginary part decreased with increase in the magnetic charge parameter Q of the Bardeen black hole for a fixed Gauss–Bonnet parameter α . This was also valid when Q was fixed and α increased, where in the real part of the QNMs increased and the absolute value of the imaginary part decreased. However, the change in the latter case was more significant than that in the former; thus, the frequency of eigenvibration of this black hole background under the scalar field perturbation increased and the decay of eigenvibration decreased with increase in α or Q 2 . Moreover, this result shows that the effect of α on the intrinsic vibration of this black hole was greater than that of Q .

Graphene is nature's thinnest elastic material and displays exceptional mechanical 1 , 2 and electronic properties 3 , 4 , 5 . Ripples are an intrinsic feature of graphene sheets 6 and are expected to strongly influence electronic properties by inducing effective magnetic fields and changing local potentials 7 , 8 , 9 , 10 , 11 , 12 . The ability to control ripple structure in graphene could allow device design based on local strain 13 and selective bandgap engineering 14 . Here, we report the first direct observation and controlled creation of one- and two-dimensional periodic ripples in suspended graphene sheets, using both spontaneously and thermally generated strains. We are able to control ripple orientation, wavelength and amplitude by controlling boundary conditions and making use of graphene's negative thermal expansion coefficient (TEC), which we measure to be much larger than that of graphite. These results elucidate the ripple formation process, which can be understood in terms of classical thin-film elasticity theory. This should lead to an improved understanding of suspended graphene devices 15 , 16 , a controlled engineering of thermal stress in large-scale graphene electronics, and a systematic investigation of the effect of ripples on the electronic properties of graphene. Ripples in suspended graphene sheets are created in a controlled manner, opening new possibilities for the engineering of graphene's properties.

With the outstanding mechanical properties, van der Waals (vdW) materials have attracted extensive attention in the research of straintronics in the past decade. In this perspective, we first review the recent progresses of the straintronics with vdW materials based on three different lattice deformation modes, i.e., in-plane strain, out-of-plane strain, and heterostrain. Then we discuss the current technique challenges in this field, and finally provide our perspectives on future research directions for both fundamental physics and electronic applications.

Background: The codon preference of chloroplast genomes not only reflects mutation patterns during the evolutionary processes of species but also significantly affects the efficiency of gene expression. This characteristic holds significant scientific importance in the application of chloroplast genetic engineering and the genetic improvement of species. Chloranthus, an ancestral angiosperm with significant economic, medicinal, and ornamental value, belongs to the basal angiosperms. However, the codon usage patterns among Chloranthus species have remained unclear. Methods: To investigate codon usage bias and its influencing factors in Chloranthus chloroplast genomes, we utilized CodonW, CUSP, and SPSS software to analyze the chloroplast genomes of seven Chloranthus species. Results: In this study, we reported and characterized the complete chloroplast genome of the Chinese endemic species Chloranthus angustifolius. The phylogenetic tree based on the whole chloroplast genomes showed that C. angustifolius is sister to Chloranthus fortunei, and the genus Chloranthus is divided into two major clades, consistent with previous studies. Our results revealed that the GC content at different codon positions across all seven Chloranthus species was less than 50%, with GC1 > GC2 > GC3. Additionally, the average effective number of codons (ENC) values exceeded 45. A total of 10 shared optimal codons were identified, nine of which end with A or U. PR2-plot, ENC-plot, and neutrality plot analyses indicated that natural selection primarily influenced codon usage bias in the chloroplast genomes of Chloranthus. Conclusions: We newly obtained the chloroplast genome of C. angustifolius and proposed that natural selection played a key role in codon usage patterns in Chloranthus species. These findings contribute to our understanding of evolutionary history and genetic diversity within this genus.

High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p–n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 −14 A and a highest on–off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe 2 /SnS 2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.

Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal–oxide–semiconductor (CMOS) technology1–4. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature4–7, demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae8 are used to selectively generate valley-polarized carriers in MoS2 through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration9–11 even without charge current, and can propagate over 18 μm by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials.A MoS2 transistor with chiral nanocrescent plasmonic antennae enables the generation, propagation, detection and manipulation of valley information at room temperature.