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Terahertz electromagnetic radiation is extremely useful for numerous applications, including imaging and spectroscopy. It is thus highly desirable to have an efficient table-top emitter covering the 1–30 THz window that is driven by a low-cost, low-power femtosecond laser oscillator. So far, all solid-state emitters solely exploit physics related to the electron charge and deliver emission spectra with substantial gaps. Here, we take advantage of the electron spin to realize a conceptually new terahertz source that relies on three tailored fundamental spintronic and photonic phenomena in magnetic metal multilayers: ultrafast photoinduced spin currents, the inverse spin-Hall effect and a broadband Fabry–Pérot resonance. Guided by an analytical model, this spintronic route offers unique possibilities for systematic optimization. We find that a 5.8-nm-thick W/CoFeB/Pt trilayer generates ultrashort pulses fully covering the 1–30 THz range. Our novel source outperforms laser-oscillator-driven emitters such as ZnTe(110) crystals in terms of bandwidth, terahertz field amplitude, flexibility, scalability and cost. Ultrashort pulses covering the 1–30 THz range are generated from a W/CoFeB/Pt trilayer and originate from photoinduced spin currents, the inverse spin Hall effect and a broadband Fabry–Pérot resonance. The resultant peak fields are several 100 kV cm –1 .

Two hundred years ago, Ampère discovered that electric loops in which currents of electrons are generated by a penetrating magnetic field can mutually interact. Here we show that Ampère’s observation can be transferred to the quantum realm of interactions between triangular plaquettes of spins on a lattice, where the electrical currents at the atomic scale are associated with the orbital motion of electrons in response to the non-coplanarity of neighbouring spins playing the role of a magnetic field. The resulting topological orbital moment underlies the relation of the orbital dynamics with the topology of the spin structure. We demonstrate that the interactions of the topological orbital moments with each other and with the spins form a new class of magnetic interactions − topological–chiral interactions − which can dominate over the Dzyaloshinskii–Moriya interaction, thus opening a path for realizing new classes of chiral magnetic materials with three-dimensional magnetization textures such as hopfions. The motion of electrons in a complex magnetic background may generate novel magnetic interactions. Here, Grytsiuk et al. report that a peculiar orbital motion of electrons in response to a non-coplanarity of neighbouring spins leads to a topological orbital moment, which further gives rise to a new class of magnetic interactions.

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 10⁶ ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.

The idea to use not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (10 12  Hz) emission spectroscopy and exploiting the spin–orbit interaction, we demonstrate the optical generation of electric photocurrents in metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism. The spin–orbit interaction can be used to optically generate and control terahertz electric photocurrents in metallic ferromagnetic heterostructures.

In spin-based electronics, information is encoded by the spin state of electron bunches 1 , 2 , 3 , 4 . Processing this information requires the controlled transport of spin angular momentum through a solid 5 , 6 , preferably at frequencies reaching the so far unexplored terahertz regime 7 , 8 , 9 . Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins 10 , 11 , 12 from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter 13 based on the inverse spin Hall effect 14 , 15 , which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states 16 . Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters 7 , 8 , 9 . Through properly designed heterostructures it is possible to control the shape and duration of spin current pulses generated by laser excitation.

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings bring to light a topological anomalous Hall response that can be found in non-collinear ferromagnetic, and antiferromagnetic phases.

We demonstrate a canted magnetization of biatomic zigzag Co chains grown on the (5 × 1) reconstructed Ir(001) surface using density functional theory (DFT) calculations and spin-polarized scanning tunneling microscopy (SP-STM) experiments. It is observed by STM that biatomic Co chains grow in three different structural configurations. Our DFT calculations show that they are all in a ferromagnetic (FM) state. Two chain types possess high symmetry due to two equivalent atomic strands and an easy magnetization direction that is along one of the principal crystallographic axes. The easy magnetization axis of the zigzag Co chains is canted away from the surface normal by an angle of 33°. This giant effect is caused by the broken chain symmetry on the substrate in combination with the strong spin-orbit coupling of Ir. SP-STM measurements confirm the stable FM order of the zigzag chains with a canted magnetization.

Orbital current has emerged over the past years as one of the key novel concepts in magnetotransport. Here, we demonstrate that laser pulses can be used to generate large and robust non-relativistic orbital currents in systems where the inversion symmetry is broken by the orbital Rashba effect. By referring to model and first principles tools, we demonstrate that orbital Rashba effect, accompanied by crystal field splitting, can mediate robust orbital photocurrents without a need for spin-orbit interaction even in metallic systems. We show that such non-relativistic orbital photocurrents are translated into derivative photocurrents of spin when relativistic effects are taken into account. We thus promote orbital photocurrents as a promising platform for optical generation of currents of angular momentum, and discuss their possible applications.

Controlling/storing information carriers, such as electron charge and spin, is key for modern information society, and significant efforts have been paid made to establish novel technologies at the nanoscale. The rise of Si-based semiconductor technology and magnetism-based technology has been motivated by the aforementioned demands. However, both technologies have been individually developed, with little effort in fusing them. Hence, establishing a technology to bridge semiconductor and magnetism-based technologies that would allow realization of a novel information device is strongly awaited. In line with this research strategy, the creation of a magnetic device using semiconductors would enable fundamental innovation. Here, we show that a mother material for modern electronics, Si, gives rise to a room-temperature orbital Hall effect (OHE), enabling the creation of novel energy-efficient magnetic memory via efficient torque generation. The orbital torque efficiency {\\xi}JDL of Si largely exceeds that of the archetypal metallic materials used in the OHE. Our achievement overturns the conventional understanding that nonmagnetic semiconductors cannot play a pivotal role in magnetic devices and paves a new avenue for creating novel information devices through the fusion of semiconductor and magnetism-based technologies.

Motivated by the recently observed topological Hall effect in ultra-thin films of SrRuO\\(_3\\) (SRO) grown on SrTiO\\(_3\\) (STO) [001] substrate, we investigate the magnetic ground state and anomalous Hall response of the SRO ultra-thin films by virtue of spin density functional theory (DFT). Our findings reveal that in the monolayer limit of an SRO film, a large energy splitting of Ru-\\(t_{2g}\\) states stabilizes an anti-ferromagnetic (AFM) insulating magnetic ground state. For the AFM ground state, our Berry curvature calculations predict a large anomalous Hall response upon doping. From the systematic symmetry analysis, we uncover that the large anomalous Hall effect arises due to a combination of broken time-reversal and crystal symmetries caused by the arrangement of non-magnetic atoms (Sr and O) in the SRO monolayer. We identify the emergent Hall effect as a clear manifestation of the so-called crystal Hall effect in terminology of Šmejkal et al. arXiv:1901.00445 (2019), and demonstrate that it persists at finite frequencies which is the manifestation of the crystal magneto-optical effect. Moreover, we find a colossal dependence of the AHE on the degree of crystal symmetry breaking also in ferromagnetic SRO films, which all together points to an alternative explanation of the emergence of the topological Hall effect observed in this type of systems.