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In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources has been an inhibitor of their full potential. Existing methods to create emitters in 2D materials face fundamental challenges in extending the working temperature while maintaining the emitter’s fabrication yield and purity. In this work, we demonstrate a method of creating site-controlled single-photon emitters in atomically thin WSe 2 with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources. Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe 2 operating at temperatures up to 150 K without plasmonic or optical cavities.

Improvements in temporal resolution of single-photon detectors enable increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging, and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the most efficient time-resolving single-photon-counting detectors available in the near-infrared, but understanding of the fundamental limits of timing resolution in these devices has been limited due to a lack of investigations into the timescales involved in the detection process. We introduce an experimental technique to probe the detection latency in SNSPDs and show that the key to achieving low timing jitter is the use of materials with low latency. By using a specialized niobium nitride SNSPD we demonstrate that the system temporal resolution can be as good as 2.6 ± 0.2 ps for visible wavelengths and 4.3 ± 0.2 ps at 1,550 nm.Knowledge about detection latency provides a guideline to reduce the timing jitter of niobium nitride superconducting nanowire single-photon detectors. A timing jitter of 2.6 ps at visible wavelength and 4.3 ps at 1,550 nm is achieved.

In atomically thin transition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to strongly correlated many-body states, including excitons and trions, that dominate the optical properties. Higher-order states, such as bound biexcitons, are possible but are difficult to identify unambiguously using linear optical spectroscopy methods. Here, we implement polarization-resolved two-dimensional coherent spectroscopy (2DCS) to unravel the complex optical response of monolayer MoSe 2 and identify multiple higher-order correlated states. Decisive signatures of neutral and charged inter-valley biexcitons appear in cross-polarized two-dimensional spectra as distinct resonances with respective ∼20 and ∼5 meV binding energies—similar to recent calculations using variational and Monte Carlo methods. A theoretical model considering the valley-dependent optical selection rules reveals the quantum pathways that give rise to these states. Inter-valley biexcitons identified here, comprising of neutral and charged excitons from different valleys, offer new opportunities for developing ultrathin biexciton lasers and polarization-entangled photon sources. Atomically thin transition metal dichalcogenides host excitons and trions, however higher-order states, although possible, are difficult to identify experimentally. Here, the authors perform polarization-resolved coherent spectroscopy to unveil the signature of neutral and charged inter-valley biexcitons in monolayer MoSe 2 .

The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe 2 ). The homogeneous linewidth is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton–exciton and exciton–phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors. The band-edge optical response of transition metal dichalcogenides is dominated by tightly bound valley excitons. Here, the authors use optical two-dimensional Fourier transform spectroscopy to determine the exciton homogeneous linewidth in monolayer tungsten diselenide.

Integrated photonics will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying optical quantum technologies can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration have enabled table-top experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. These advances have enabled integrated quantum photonic technologies combining up to 650 optical and electrical components onto a single chip that are capable of programmable quantum information processing, chip-to-chip networking, hybrid quantum system integration, and high-speed communications. In this roadmap article, we highlight the status, current and future challenges, and emerging technologies in several key research areas in integrated quantum photonics, including photonic platforms, quantum and classical light sources, quantum frequency conversion, integrated detectors, and applications in computing, communications, and sensing. With advances in materials, photonic design architectures, fabrication and integration processes, packaging, and testing and benchmarking, in the next decade we can expect a transition from single- and few-function prototypes to large-scale integration of multi-functional and reconfigurable devices that will have a transformative impact on quantum information science and engineering.

Two-dimensional (2D) materials have shown great promise as hosts for high-purity deterministic single-photon sources. In the last few years, the underlying physics of single photon emission in 2D materials have been uncovered, and their optical properties have been improved to meet criteria for a variety of quantum technologies and applications. In this work, we take advantage of the unique characteristics of dielectric nanoantennas in manipulating the electromagnetic response on a sub-wavelength scale to localize and control defect-based single-photon emitters (SPEs) in 2D layered materials. We show that dielectric nanoantennas are capable of inducing high Purcell enhancement >20 and therefore brighter single-photon emission, which is characterized by a reduction of the emitters’ radiative lifetimes and enhancement of their brightness by more than an order of magnitude. We demonstrate that the sub-wavelength-scale dielectric nanoantennas can be designed to also impose a predetermined strain profile that determines the confinement potential of the SPE, leading to robust control over the optical polarization with up to 94% extinction ratio. The combination of large Purcell enhancement, polarization orientation, and site control through strain engineering demonstrates the advantages and unique capabilities of dielectric nanoantennas for enhancing the quantum optical properties of 2D SPEs for quantum information technologies.

Multi-dimensional coherent spectroscopy (MDCS) has become an extremely versatile and sensitive technique for elucidating the structure, composition, and dynamics of condensed matter, atomic, and molecular systems. The appeal of MDCS lies in its ability to resolve both individual-emitter and ensemble-averaged dynamics of optically created excitations in disordered systems. When applied to semiconductors, MDCS enables unambiguous separation of homogeneous and inhomogeneous contributions to the optical linewidth, pinpoints the nature of coupling between resonances, and reveals signatures of many-body interactions. In this review, we discuss the implementation of MDCS to measure the nonlinear optical response of excitonic transitions in semiconductor nanostructures. Capabilities of the technique are illustrated with recent experimental studies that advance our understanding of optical decoherence and dissipation, energy transfer, and many-body phenomena in quantum dots and quantum wells, semiconductor microcavities, layered semiconductors, and photovoltaic materials.

An optical fibre-fed superconducting electro-optic modulator with gigahertz bandwidth and attojoule per bit electric power consumption offers a fast, efficient means to connect superconducting circuits to the room temperature environment.

By exploiting the optical Stark effect, the valley degree of freedom in monolayer transition metal dichalcogenides can be selectively manipulated and detected using all-optical methods. Encoding information in quantum degrees of freedom is at the heart of quantum electronics. Valley pseudospin, which labels local energy extrema in the band structure of certain periodic solids,has been proposed and pursued as an alternative information carrier, closely resembling electron spin. Although valley polarization can be generated and detected using optical techniques in materials such as monolayer transition metal dichalcogenides, manipulation of this degree of freedomis challenging. Writing in Nature Physics, Ziliang Ye and co-workers1 demonstrate an ultrafast, all-optical method for manipulating the valley pseudospin of excitons in a monolayer of tungsten diselenide (WSe2).