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Stretchable semiconducting polymers have been developed as a key component to enable skin-like wearable electronics, but their electrical performance must be improved to enable more advanced functionalities. Here, we report a solution processing approach that can achieve multi-scale ordering and alignment of conjugated polymers in stretchable semiconductors to substantially improve their charge carrier mobility. Using solution shearing with a patterned microtrench coating blade, macroscale alignment of conjugated-polymer nanostructures was achieved along the charge transport direction. In conjunction, the nanoscale spatial confinement aligns chain conformation and promotes short-range π–π ordering, substantially reducing the energetic barrier for charge carrier transport. As a result, the mobilities of stretchable conjugated-polymer films have been enhanced up to threefold and maintained under a strain up to 100%. This method may also serve as the basis for large-area manufacturing of stretchable semiconducting films, as demonstrated by the roll-to-roll coating of metre-scale films.Solution shearing of semiconducting polymers with a patterned blade induces improved alignment of the polymeric chains at the nano- and macroscale. This leads to increased charge transport in stretchable, roll-to-roll deposited organic transistors.

A scalable process is described for fabricating skin-like electronic circuitry that can be bent and stretched while retaining desirable electronic functionality. Electronics at a stretch Flexible electronics have a range of potential medical applications, particularly for devices that need to integrate seamlessly with humans. But to get the most out of such systems, the circuitry ideally needs to be stretchable as well as flexible, much like human skin. Zhenan Bao and colleagues have been exploring a strategy for achieving this combination of properties using polymeric electronic materials that are intrinsically stretchable. Now they demonstrate a scalable fabrication process in which such materials can be used to produce large-area, skin-like, electronic circuitry that can be bent and stretched while retaining its desirable electronic functionality. Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring 1 , 2 , medical treatment 3 , 4 , medical implants 5 and biological studies 6 , 7 , and for technologies that include human–machine interfaces, soft robotics and augmented reality 8 , 9 . Rendering such electronics soft and stretchable—like human skin—would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array 2 , 10 , 11 , 12 . We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy 13 , 14 , 15 : such materials have been reported 11 , 16 , 17 , 18 , 19 , but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current–voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.

Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors, without affecting charge transport mobility. The increased polymer chain dynamics under nanoconfinement significantly reduces the modulus of the conjugated polymer and largely delays the onset of crack formation under strain. As a result, our fabricated semiconducting film can be stretched up to 100% strain without affecting mobility, retaining values comparable to that of amorphous silicon. The fully stretchable transistors exhibit high biaxial stretchability with minimal change in on current even when poked with a sharp object. We demonstrate a skinlike finger-wearable driver for a light-emitting diode.

The efficacy of wireless intracortical brain–computer interfaces (iBCIs) is limited in part by the number of recording channels, which is constrained by the power budget of the implantable system. Designing wireless iBCIs that provide the high-quality recordings of today’s wired neural interfaces may lead to inadvertent over-design at the expense of power consumption and scalability. Here, we report analyses of neural signals collected from experimental iBCI measurements in rhesus macaques and from a clinical-trial participant with implanted 96-channel Utah multielectrode arrays to understand the trade-offs between signal quality and decoder performance. Moreover, we propose an efficient hardware design for clinically viable iBCIs, and suggest that the circuit design parameters of current recording iBCIs can be relaxed considerably without loss of performance. The proposed design may allow for an order-of-magnitude power savings and lead to clinically viable iBCIs with a higher channel count. Analyses of data from intracortical brain–computer interfaces implanted in rhesus macaques and in a human suggest that the circuit design parameters of current recording interfaces can be relaxed considerably without loss of performance.

We present a model for the noise and inherent stochasticity of fluorescence signals in both continuous wave (CW) and time-gated (TG) conditions. When the fluorophores are subjected to an arbitrary excitation photon flux, we apply the model and compute the evolution of the probability mass function (pmf) for each quantum state comprising a fluorophore’s electronic structure, and hence the dynamics of the resulting emission photon flux. Both the ensemble and stochastic models presented in this work have been verified using Monte Carlo molecular dynamic simulations that utilize the Gillespie algorithm. The implications of the model on the design of biomolecular fluorescence detection systems are explored in three relevant numerical examples. For a given system, the quantum-limited signal-to-noise ratio (QSNR) and limits of detection are computed to demonstrate how key design tradeoffs are quantified. We find that as systems scale down to micro- and nano- dimensions, the interplay between the fluorophore’s photophysical qualities and use of CW or TG has ramifications on optimal design strategies when considering optical component selection, measurement speed, and system energy requirements. While CW systems remain a gold standard, TG systems can be leveraged to overcome cost and system complexity hurdles when paired with the appropriate fluorophore.

Electrochemical biosensors hold the exciting potential to integrate molecular detection with signal processing and wireless communication in a miniaturized, low‐cost system. However, as electrochemical biosensors are miniaturized to the micrometer scale, their signal‐to‐noise ratio degrades and reduces their utility for molecular diagnostics. Studies have reported that nanostructured electrodes can improve electrochemical biosensor signals, but since the underlying mechanism remains poorly understood, it remains difficult to fully exploit this phenomenon to improve biosensor performance. In this work, electrochemical aptamer biosensors on nanoporous electrode are optimized to achieve improved sensitivity by tuning pore size, probe density, and electrochemical measurement parameters. Further, a novel mechanism in which electron transfer is physically accelerated within nanostructured electrodes due to reduced charge screening, resulting in enhanced sensitivity is proposed and experimentally validated. In concert with the increased surface areas achieved with this platform, this newly identified effect can yield an up to 24‐fold increase in signal level and nearly fourfold lower limit of detection relative to planar electrodes with the same footprint. Importantly, this strategy can be generalized to virtually any electrochemical aptamer sensor, enabling sensitive detection in applications where miniaturization is a necessity, and should likewise prove broadly applicable for improving electrochemical biosensor performance in general. In this work, nanostructured electrodes with tunable porosity for electrochemical biosensing that offer increased signal level and lower limit of detection than conventional planar electrodes are reported. Importantly, a novel mechanism in which electron transfer is physically accelerated within nanostructured electrodes due to reduced charge screening, resulting in enhanced sensitivity is proposed and experimentally validated.

In this paper, a particular discrete-time nonlinear and time-invariant system represented as a vector difference equation is analyzed for its stability properties. The motivation for analyzing this particular system is that it models gated recurrent unit neural networks commonly used and well known in machine learning applications. From the technical perspective, the analyses exploit the systems similarities to a convex combination of discrete-time systems, where one of the systems is trivial, and thus, the overall properties are mostly dependent on the other one. Stability results are formulated for the nonlinear system and its linearization with respect to the systems, in general, multiple equilibria. To motivate and illustrate the potential of these results in applications, some particular results are derived for the gated recurrent unit neural network models and a connection between local stability analysis and learning is provided.

In this work, an approach for enabling miniaturized, low-voltage hardware for active structural health monitoring (SHM) based on ultrasonic guided waves is investigated. The proposed technique relies on S-parameter measurements instead of time-domain pulsing and thereby trades off longer measurement times with lower actuation voltages for improved compatibility with dense complementary metal-oxide-semiconductor (CMOS) chip integration. To demonstrate the feasibility of this method, we present results showing the successful localization of defects in aluminum and carbon-fiber-reinforced polymer (CFRP) test structures using S-parameter measurements. The S-parameter measurements were made on benchtop vector network analyzers that actuate the piezoelectric transducers at output voltage amplitudes as low as 1.264 Vpp.

A set of unique features, including large-area solution processing on flexible and stretchable substrates, make polymer semiconductors a promising material choice for a range of state-of-the-art applications in electronics, optoelectronics and sensing. Yet, an inherent weakness of polymer semiconductors remains their low dielectric constants, increasing their susceptibility toward unscreened dipoles. These dipoles are particularly prevalent at polymer-dielectric interfaces with high- k dielectrics, which are essential for the operation of devices such as low-voltage field-effect transistors. This shortcoming can be addressed by using self-assembled monolayers (SAMs) to passivate surfaces that impact charge transport. However, SAM-treatment also increases the hydrophobicity of surfaces and therefore poses a challenge for subsequent solution processing steps and complex packaging of devices. Here, we report low-voltage polymer transistors processed by spin coating of the polymer semiconductors on highly hydrophobic SAM-treated aluminum and hafnium oxide dielectrics (contact angles >100) through fine-tuning of the interfacial tension at the polymer-dielectric interface. This approach enables the processing and detailed characterization of near-amorphous (indacenodithiophene- co benzothiadiazole) as well as semicrystalline ( poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)diketopyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophen )) polymer semiconductors. We demonstrate polymer transistors that exhibit high on-currents and field-independent, charge carrier mobilities of 0.8 cm 2 V −1 s −1 at low operating voltages (<3 V).

For the next generation of wearable health monitors, it is essential to develop stretchable and conformable sensors with robust electrical performance. These sensors should, in particular, provide a stable electrical output without being affected by external variables such as induced strain. Here, we report circuit design strategies that can improve the accuracy and robustness of a temperature sensor based on stretchable carbon nanotube transistors. Using static and dynamic differential readout approaches, our circuits suppress strain-dependent errors and achieve a measured inaccuracy of only ±1  o C within a uniaxial strain range of 0–60%. We address device variability by using a one-time, single-point calibration approach. In contrast with previous approaches, which infer temperature change through a normalized measurement at two temperatures, our prototype devices provide an absolute output without temperature cycling. This is essential for practical deployment because heating and cooling the sensor is prohibitively slow and costly during real-time operation and production testing. Using carbon nanotube transistors, stretchable temperature sensor circuits can be designed that suppress strain-dependent errors and achieve a measured inaccuracy of only ±1 °C within a uniaxial strain range of 0–60%