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Improving thermal stability is of great importance for the industrialization of polymer solar cells (PSC). In this paper, we systematically investigated the high-temperature thermal annealing effect on the device performance of the state-of-the-art polymer:non-fullerene (PM6:Y6) solar cells with an inverted structure. Results revealed that the overall performance decay (19% decrease) was mainly due to the fast open-circuit voltage (VOC, 10% decrease) and fill factor (FF, 10% decrease) decays whereas short circuit current (JSC) was relatively stable upon annealing at 150 °C (0.5% decrease). Pre-annealing on the ZnO/PM6:Y6 at 150 °C before the completion of cell fabrication resulted in a 1.7% performance decrease, while annealing on the ZnO/PM6:Y6/MoO3 films led to a 10.5% performance decay, indicating that the degradation at the PM6:Y6/MoO3 interface is the main reason for the overall performance decay. The increased ideality factor and reduced built-in potential confirmed by dark J − V curve analysis further confirmed the increased interfacial charge recombination after thermal annealing. The interaction of PM6:Y6 and MoO3 was proved by UV-Vis absorption and XPS measurements. Such deep chemical doping of PM6:Y6 led to unfavorable band alignment at the interface, which led to increased surface charge recombination and reduced built-in potential of the cells after thermal annealing. Inserting a thin C60 layer between the PM6:Y6 and MoO3 significantly improved the cells’ thermal stability, and less than 2% decay was measured for the optimized cell with 3 nm C60.

A method to determine the doping induced charge carrier profiles in lightly and moderately doped organic semiconductor thin films is presented. The theory of the method of Charge Extraction by a Linearly Increasing Voltage technique in the doping-induced capacitive regime (doping-CELIV) is extended to the case with non-uniform doping profiles and the analytical description is verified with drift-diffusion simulations. The method is demonstrated experimentally on evaporated organic small-molecule thin films with a controlled doping profile, and solution-processed thin films where the non-uniform doping profile is unintentional, probably induced during the deposition process, and a priori unknown. Furthermore, the method offers a possibility of directly probing charge-density distributions at interfaces between highly doped and lightly doped or undoped layers.

In thin‐film photovoltaics, such as organic and perovskite solar cells, charge extraction selectivity is crucial. In order to improve selectivity, charge transporting layers (doped and undoped) are frequently used; however, it is not well understood how a charge transporting layer should be designed in order to ensure efficient extraction of majority carriers while blocking minority carriers. This study clarifies how well charge transporting layers with varying majority carrier conductivities block minority carriers. The charge extraction by a linearly increasing voltage technique is used to determine the surface recombination velocity of minority carriers in model system devices with varying majority carrier conductivity in the transporting layer. The results show that transporting layers with high conductivity for majority carriers do not block minority carriers—at least not at operating voltages close to or above the built‐in voltage, due to direct bimolecular recombination across the transporting layer–absorber layer interface. Design principles are furthermore discussed and proposed to achieve selective charge extraction in thin‐film solar cells using charge transporting layers.

The recently introduced perovskite solar cell (PSC) technology is a promising candidate for providing low-cost energy for future demands. However, one major concern with the technology can be traced back to morphological defects in the electron selective layer (ESL), which deteriorates the solar cell performance. Pinholes in the ESL may lead to an increased surface recombination rate for holes, if the perovskite absorber layer is in contact with the fluorine-doped tin oxide (FTO) substrate via the pinholes. In this work, we used sol-gel-derived mesoporous TiO2 thin films prepared by block co-polymer templating in combination with dip coating as a model system for investigating the effect of ESL pinholes on the photovoltaic performance of planar heterojunction PSCs. We studied TiO2 films with different porosities and film thicknesses, and observed that the induced pinholes only had a minor impact on the device performance. This suggests that having narrow pinholes with a diameter of about 10 nm in the ESL is in fact not detrimental for the device performance and can even, to some extent improve their performance. A probable reason for this is that the narrow pores in the ordered structure do not allow the perovskite crystals to form interconnected pathways to the underlying FTO substrate. However, for ultrathin (~20 nm) porous layers, an incomplete ESL surface coverage of the FTO layer will further deteriorate the device performance.

Abstract Aims Exercise is effective in preventing and treating cardiovascular disease. High-intensity interval training (HIIT) has shown promising effects on cardiorespiratory fitness and quality of life (QoL). However, evidence of risks and beneficial effects of HIIT in patients at high risk of ventricular arrhythmias (VA) is limited. This study evaluated the effects of HIIT on peak oxygen uptake (VO2peak), QoL, and the burden of VA in patients with an implantable cardioverter defibrillator (ICD). Methods and results Fifty-six ICD patients with coronary artery disease (CAD) or non-ischaemic dilated cardiomyopathy (DCM) were randomized to a 12-week supervised HIIT programme with intervals at 85–95% of maximum heart rate, or to usual activity (control). Primary outcomes were changes in VO2peak and QoL. Secondary outcomes included changes in VA burden, with or without ICD therapy. High-intensity interval training increased VO2peak by 7.0% vs. no change in the control group, with a between-group difference of 1.7 mL/kg/min (95% confidence interval, 0.7–2.6; P < 0.001). After correction for multiple testing, HIIT improved QoL on the SF-36 health change domain, while most other domains showed favourable but non-significant trends. Clinically relevant VA occurred in two patients during baseline exercise testing and in two patients during HIIT. Sustained ventricular tachycardia incidence was lower in the HIIT group (P = 0.037), although the number of events was small and unevenly distributed. Conclusion In ICD patients with CAD or non-ischaemic DCM, a supervised 12-week HIIT programme significantly improved exercise capacity and QoL. However, its overall impact on VA remains inconclusive, and the risk of exercise-induced arrhythmias remains a concern. Graphical Abstract Graphical Abstract For image description, please refer to the figure legend and surrounding text.

The recently introduced perovskite solar cell (PSC) technology is a promising candidate for providing low-cost energy for future demands. However, one major concern with the technology can be traced back to morphological defects in the electron selective layer (ESL), which deteriorates the solar cell performance. Pinholes in the ESL may lead to an increased surface recombination rate for holes, if the perovskite absorber layer is in contact with the fluorine-doped tin oxide (FTO) substrate via the pinholes. In this work, we used sol-gel-derived mesoporous TiO thin films prepared by block co-polymer templating in combination with dip coating as a model system for investigating the effect of ESL pinholes on the photovoltaic performance of planar heterojunction PSCs. We studied TiO films with different porosities and film thicknesses, and observed that the induced pinholes only had a minor impact on the device performance. This suggests that having narrow pinholes with a diameter of about 10 nm in the ESL is in fact not detrimental for the device performance and can even, to some extent improve their performance. A probable reason for this is that the narrow pores in the ordered structure do not allow the perovskite crystals to form interconnected pathways to the underlying FTO substrate. However, for ultrathin (~20 nm) porous layers, an incomplete ESL surface coverage of the FTO layer will further deteriorate the device performance.

Suppressing charge recombination is key for organic solar cells to become commercial reality. However, there is still no conclusive picture of how recombination losses are influenced by the complex nanoscale morphology. Here, new insight is provided by revisiting the P3HT:PCBM blend, which is still one of the best performers regarding reduced recombination. By changing small details in the annealing procedure, two model morphologies were prepared that vary in phase separation, molecular order and phase purity, as revealed by electron tomography and optical spectroscopy. Both systems behave very similarly with respect to charge generation and transport, but differ significantly in bimolecular recombination. Only the system containing P3HT aggregates of high crystalline quality and purity is found to achieve exceptionally low recombination rates. The high-quality aggregates support charge delocalization, which assists the re-dissociation of interfacial charge-transfer states formed upon the encounter of free carriers. For devices with the optimized morphology, an exceptional long hole diffusion length is found, which allows them to work as Shockley-type solar cells even in thick junctions of 300 nm. In contrast, the encounter rate and the size of the phase-separated domains appears to be less important.

Unintentional doping of the active layer is a source for lowered device performance in organic solar cells. The effect of doping is to induce a space-charge region within the active layer, generally resulting in increased recombination losses. In this work, the impact of a doping-induced space-charge region on the current-voltage characteristics of low-mobility solar cell devices has been clarified by means of analytical derivations and numerical device simulations. It is found that, in case of a doped active layer, the collection efficiency of photo-generated charge carriers is independent of the light intensity and exhibits a distinct voltage dependence, resulting in an apparent electric-field dependence of the photocurrent. Furthermore, an analytical expression describing the behavior of the photocurrent is derived. The validity of the analytical model is verified by numerical drift-diffusion simulations and demonstrated experimentally on solution-processed organic solar cells. Based on the theoretical results, conditions of how to overcome charge collection losses caused by doping are discussed. Furthermore, the presented analytical framework provides tools to distinguish between different mechanisms leading to voltage dependent photocurrents.

Charge selective interlayers are crucial in thin-film photovoltaics, such as organic and Perovskite solar cells. Charge transporting layers (doped and undoped) constitute perhaps the most important class of charge selective interlayers; however, it is not well understood how a charge transporting layer should be designed in order to ensure efficient extraction of majority carriers while blocking minority carriers. This work clarifies how well charge-transporting layers with varying majority carrier conductivities block minority carriers. We use the Charge Extraction by a Linearly Increasing Voltage technique to determine the surface recombination velocity of minority carriers in model system devices with varying majority carrier conductivity in the transporting layer. Our results show that transporting layers with high conductivity for majority carriers do not block minority carriers - at least not at operating voltages close to or above the built-in voltage, due to direct bi-molecular recombination across the transporting layer-absorber layer interface. We furthermore discuss and propose design principles to achieve selective charge extraction in thin film solar cells using charge transporting layers.

Solution-processable interlayers are an important building block for the commercialization of organic electronic devices such as organic solar cells. Here, the potential of cross-linking to provide an insoluble, stable and versatile charge transport layer based on soluble organic semiconductors is studied. For this purpose, a photo-reactive tris-azide cross-linker is synthesized. The capability of the small molecular cross-linker is illustrated by applying it to a p-doped polymer used as a hole transport layer in organic solar cells. High cross-linking efficiency and excellent charge extraction properties of the cross-linked doped hole transport layer are demonstrated. However, at high doping levels in the interlayer, the solar cell efficiency is found to deteriorate. Based on charge extraction measurements and numerical device simulations, it is shown that this is due to diffusion of dopants into the active layer of the solar cell. Thus, in the development of future cross-linker materials, care must be taken to ensure that they immobilize not only the host, but also the dopants.