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Combining MoS 2 monolayers to form multilayers allows to access new functionalities. Deterministic assembly of large area van der Waals structures requires concrete indicators of successful interlayer coupling in bilayers grown by chemical vapor deposition. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in both as-grown MoS 2 homobilayer samples and in artificially stacked bilayers from monolayers, all grown by chemical vapor deposition. We show that hole delocalization over the bilayer is only allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about t ⊥  = 49 meV. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments. The authors investigate the interplay between the stacking order and the interlayer coupling in MoS 2 homobilayers as well as artificially stacked bilayers grown by chemical vapour deposition, and identify the interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling.

Second-harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS 2 , that shows strong optical oscillator strength for the intra- but also interlayer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. Since interlayer exciton transitions are highly tunable also by choosing twist angle and material combination our results open up new approaches for designing the SHG response of layered materials. Efficient second-harmonic generation (SHG) occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here the authors show SHG tuning in bilayer MoS 2 - an inversion-symmetric crystal - mediated by interlayer excitons.

Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer transition metal dichalcogenides in optoelectronics. The primary stages of carrier relaxation affect a plethora of subsequent physical mechanisms. Here we measure light scattering and emission in tungsten diselenide monolayers close to the laser excitation energy (down to ~0.6 meV). We reveal a series of periodic maxima in the hot photoluminescence intensity, stemming from energy states higher than the A-exciton state. We find a period ~15 meV for 7 peaks below (Stokes) and 5 peaks above (anti-Stokes) the laser excitation energy, with a strong temperature dependence. These are assigned to phonon cascades, whereby carriers undergo phonon-induced transitions between real states above the free-carrier gap with a probability of radiative recombination at each step. We infer that intermediate states in the conduction band at the Λ-valley of the Brillouin zone participate in the cascade process of tungsten diselenide monolayers. This provides a fundamental understanding of the first stages of carrier–phonon interaction, useful for optoelectronic applications of layered semiconductors. The primary stages of carrier relaxation in atomically thin transition metal dichalcogenides are hardly accessible due to their fast timescales. Here, the authors measure the first stages of carrier–phonon interaction in monolayer WSe 2 via a series of periodic maxima in the hot photoluminescence intensity, assigned to phonon cascades.

Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin–valley memory applications. In monolayer TMDs the optical absorption is strong, but the transition energy cannot be tuned as the neutral exciton has essentially no out-of-plane static electric dipole1,2. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is substantially reduced. In this work, we show tuning over 120 meV of interlayer excitons with a high oscillator strength in bilayer MoS2 due to the quantum-confined Stark effect3. We optically probed the interaction between intra- and interlayer excitons as they were energetically tuned into resonance. Interlayer excitons interact strongly with intralayer B excitons, as demonstrated by a clear avoided crossing, whereas the interaction with intralayer A excitons is substantially weaker. Our observations are supported by density functional theory (DFT) calculations, which include excitonic effects. In MoS2 trilayers, our experiments uncovered two types of interlayer excitons with and without in-built electric dipoles. Highly tunable excitonic transitions with large in-built dipoles and oscillator strengths will result in strong exciton–exciton interactions and therefore hold great promise for non-linear optics with polaritons.Interlayer excitons in bilayer MoS2 exhibit both a high oscillator strength and highly tunable energies in an applied electric field.

The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe 2 -WSe 2 heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. We show that for hBN-encapsulated heterostructures, CT excitons exhibit small binding energies of just a few tens meV and at the same time large dipole moments, making them promising materials for optoelectronic applications (benefiting from an efficient exciton dissociation and fast dipole-driven exciton propagation). Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures. The authors unveil the many-particle processes underpinning the formation of bound charge transfer excitons at the interface of hBN-encapsulated lateral MoSe 2 -WSe 2 heterostructures. The excitons can be tuned via interface (i.e. high quality lateral junction) and dielectric (i.e. hBN encapsulation) engineering.

Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. Long-lived excitons are required to achieve high particle densities, to mediate thermalisation, and to allow for spatially and temporally correlated phases. Additionally, the ability to confine them in periodic arrays is key to building a solid-state analogue to atoms in optical lattices. Here, we demonstrate interlayer excitons with lifetime approaching 0.2 ms in a layered-material heterostructure made from WS 2 and WSe 2 monolayers. We show that interlayer excitons can be localised in an array using a nano-patterned substrate. These confined excitons exhibit microsecond-lifetime, enhanced emission rate, and optical selection rules inherited from the host material. The combination of a permanent dipole, deterministic spatial confinement and long lifetime places interlayer excitons in a regime that satisfies one of the requirements for simulating quantum Ising models in optically resolvable lattices. Excitons are quasiparticles consisting of an electron-hole pair and can be used to study many-body phenomenon. Here, the authors demonstrate on-demand quantum confinement of long-lived interlayer excitons in WS 2 /WSe 2 heterostructures deposited on nanopatterned substrates.

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy of CVD grown MoSe2-WSe2 lateral heterostructures, encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal optical transition linewidths similar to high quality exfoliated monolayers, while PL imaging experiments uncover the effective excitonic diffusion length of both materials. The typical extent of the covalently bonded MoSe2-WSe2 heterojunctions is 3 nm measured by scanning transmission electron microscopy (STEM). Tip-enhanced, sub-wavelength optical spectroscopy mapping shows the high quality of the heterojunction which acts as an excitonic diode resulting in unidirectional exciton transfer from WSe2 to MoSe2.

We use laser-scanning nonlinear imaging microscopy in atomically thin transition metal dichalcogenides (TMDs) to reveal information on the crystalline orientation distribution, within the 2D lattice. In particular, we perform polarization-resolved second-harmonic generation (PSHG) imaging in a stationary, raster-scanned chemical vapor deposition (CVD)-grown WS2 flake, in order to obtain with high precision a spatially resolved map of the orientation of its main crystallographic axis (armchair orientation). By fitting the experimental PSHG images of sub-micron resolution into a generalized nonlinear model, we are able to determine the armchair orientation for every pixel of the image of the 2D material, with further improved resolution. This pixel-wise mapping of the armchair orientation of 2D WS2 allows us to distinguish between different domains, reveal fine structure, and estimate the crystal orientation variability, which can be used as a unique crystal quality marker over large areas. The necessity and superiority of a polarization-resolved analysis over intensity-only measurements is experimentally demonstrated, while the advantages of PSHG over other techniques are analysed and discussed.

Ultrafast laser fields are able to widely tune the physical properties of semiconductors by generating virtual states. Using strong fields at energies below the optical bandgap, control of excitons in two-dimensional semiconductors has now been demonstrated.

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe 2 -WSe 2 ) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices. Here, the authors use tip-enhanced photoluminescence spectroscopy to show a discontinuity of the exciton density distribution on each side of the interface of a MoSe 2 /WSe 2 lateral heterostructure. They introduce the concept of ‘exciton Kapitza resistance’ by analogy with the interfacial thermal resistance known as ‘Kapitza resistance’.