Explore the vast range of titles available.

Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations of incorporated Mg, which also lead to a reduction in free-hole concentration in Mg doped GaN. Detailed analysis pinpoints the arrangement of atoms in and around the defects and verify the presence of a well-defined layer of Mg at all facets, including the inclined facets. Our observations have resulted in a model of the pyramid-shaped defect, including structural displacements and compositional replacements, which is verified by image simulations. Finally, the total concentration of Mg atoms bound to these defects were evaluated, enabling a correlation between inactive and defect-bound dopants.

Two-dimensional carbides and nitrides of transition metals, known as MXenes, are a fast-growing family of materials that have attracted attention as energy storage materials. MXenes are mainly prepared from Al-containing MAX phases (where A = Al) by Al dissolution in F-containing solution; most other MAX phases have not been explored. Here a redox-controlled A-site etching of MAX phases in Lewis acidic melts is proposed and validated by the synthesis of various MXenes from unconventional MAX-phase precursors with A elements Si, Zn and Ga. A negative electrode of Ti 3 C 2 MXene material obtained through this molten salt synthesis method delivers a Li + storage capacity of up to 738 C g −1 (205 mAh g −1 ) with high charge–discharge rate and a pseudocapacitive-like electrochemical signature in 1 M LiPF 6 carbonate-based electrolyte. MXenes prepared via this molten salt synthesis route may prove suitable for use as high-rate negative-electrode materials for electrochemical energy storage applications. Two-dimensional transition metal carbides and nitrides, known as MXenes, are currently considered as energy storage materials. A generic Lewis acidic etching route for preparing high-rate negative-electrode MXenes with enhanced electrochemical performance in non-aqueous electrolyte is now proposed.

The integration and cooperation of mechanoreceptors, neurons and synapses in somatosensory systems enable humans to efficiently sense and process tactile information. Inspired by biological somatosensory systems, we report an optoelectronic spiking afferent nerve with neural coding, perceptual learning and memorizing capabilities to mimic tactile sensing and processing. Our system senses pressure by MXene-based sensors, converts pressure information to light pulses by coupling light-emitting diodes to analog-to-digital circuits, then integrates light pulses using a synaptic photomemristor. With neural coding, our spiking nerve is capable of not only detecting simultaneous pressure inputs, but also recognizing Morse code, braille, and object movement. Furthermore, with dimensionality-reduced feature extraction and learning, our system can recognize and memorize handwritten alphabets and words, providing a promising approach towards e-skin, neurorobotics and human-machine interaction technologies. Designing artificial somatosensory systems to efficiently emulate biological tactile information sensing, coding, and processing remains a challenge. Here, the authors demonstrate a tactile sensory system based on optoelectronic spiking afferent nerves with both coding and learning capabilities.

The creation of vacancies and/or pores into two‐dimensional materials, like graphene and MXenes, has shown to increase their performance for sustainable applications. However, a simple and affordable method with controlled and tailorable vacancy concentration and/or pores size remains challenging. Herein, a simple and reproducible method is presented for controlled synthesis of Mo1.74CTz MXene with randomly distributed vacancies and pores, obtained from selective etching of both Ga and Cr in the Cr‐alloyed MAX‐phase like precursor Mo1.74Cr0.26Ga2C. Structural and compositional analysis of the 3D alloy show ≈13% Cr on the metal site, homogeneously distributed between different particles and within the atomic structure. After etching, it translates to Mo1.74CTz MXene, exhibiting defect‐rich sheets. Notably, the incorporation of Cr facilitates a shorter etching time with an improved yield compared to Mo2CTz. The Mo1.74CTz MXene displays excellent electrochemical properties, almost doubling the capacitance values (1152 F cm−3 and 297 F g−1 at 2 mV s−1 scan rate), compared to its pristine counterpart Mo2CTz. The presented method and obtained results suggest defect engineering of MXenes through precursor alloying as a pathway that can be generalized to other phases, to further improve their properties for various applications. A simple and reproducible method for Mo1.74CTz MXene synthesis with randomly distributed vacancies and pores is presented. The process allows shorter etching time, improved yield, and result in significantly higher capacitance compared to its stoichiometric MXene counterpart. Defect engineering through precursor alloying is suggested as a pathway to be generalized for further improvement of MXene properties.

Superconducting high entropy alloys (HEAs) may combine extraordinary mechanical properties with robust superconductivity. They are suitable model systems for the investigation of the interplay of disorder and superconductivity. Here, we report on the superconductivity in (TaNb) 1- x (ZrHfTi) x thin films. Beyond the near-equimolar region, the films comprise hundreds-of-nanometer-sized crystalline grains and show robust bulk superconductivity. However, the superconducting transitions in these nanocomposites are dramatically suppressed in the near-equimolar configurations, i.e., 0.45 <  x  < 0.64, where elemental distributions are equivalently homogeneous. Crystal/glass high entropy alloy nanocomposite phase separation was observed for the films in the near-equimolar region, which yields a broadened two-step normal to superconducting transition. Furthermore, the diamagnetic shielding in these films is only observed far below the onset temperature of superconductivity. As these unusual superconducting transitions are observed only in the samples with the high mixing entropy, this compositional range influences the collective electronic properties in these materials. High entropy alloys are multielement materials exhibiting enhanced properties compared to their binary or ternary equivalents. Here, the authors investigate the influence of microstructure and elemental distribution on the transport and superconducting properties of (TaNb) 1-x (ZrHfTi) x thin films.

Tailoring of individual single–atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report 15 inherently nanolaminated V₂(AₓSn1-x)C (A = Fe, Co, Ni, Mn, and combinations thereof, with x ∼ 1/3) MAX phases synthesized by an alloy-guided reaction. The simultaneous occupancy of the 4 magnetic elements and Sn in the individual single–atom-thick A layers constitutes high-entropy MAX phase in which multielemental alloying exclusively occurs in the 2-dimensional (2D) A layers. V₂(AₓSn1-x)C exhibit distinct ferromagnetic behavior that can be compositionally tailored from the multielement A-layer alloying. Density functional theory and phase diagram calculations are performed to understand the structure stability of these MAX phases. This 2D multielemental alloying approach provides a structural design route to discover nanolaminated materials and expand their chemical and physical properties. In fact, the magnetic behavior of these multielemental MAX phases shows strong dependency on the combination of various elements.

The exploration of two-dimensional solids is an active area of materials discovery. Research in this area has given us structures spanning graphene to dichalcogenides, and more recently 2D transition metal carbides (MXenes). One of the challenges now is to master ordering within the atomic sheets. Herein, we present a top-down, high-yield, facile route for the controlled introduction of ordered divacancies in MXenes. By designing a parent 3D atomic laminate, (Mo 2/3 Sc 1/3 ) 2 AlC, with in-plane chemical ordering, and by selectively etching the Al and Sc atoms, we show evidence for 2D Mo 1.33 C sheets with ordered metal divacancies and high electrical conductivities. At ∼1,100 F cm −3 , this 2D material exhibits a 65% higher volumetric capacitance than its counterpart, Mo 2 C, with no vacancies, and one of the highest volumetric capacitance values ever reported, to the best of our knowledge. This structural design on the atomic scale may alter and expand the concept of property-tailoring of 2D materials. Vacancies in 2D materials can influence their properties, however controlling their formation remains a challenge. Here the authors show that selective etching of a 3D laminate with in-plane chemical ordering results in formation of MXenes with ordered divacancies, as well as elevated conductance and supercapacitance.

Enhancing both the energy storage and power capabilities of electrochemical capacitors remains a challenge. Herein, Ti3C2Tz MXene is mixed with MoO3 nanobelts in various mass ratios and the mixture is used to vacuum filter binder free, open, flexible, and free‐standing films. The conductive Ti3C2Tz flakes bridge the nanobelts, facilitating electron transfer; the randomly oriented, and interconnected, MoO3 nanobelts, in turn, prevent the restacking of the Ti3C2Tz nanosheets. Benefitting from these advantages, a MoO3/Ti3C2Tz film with a 8:2 mass ratio exhibits high gravimetric/volumetric capacities with good cyclability, namely, 837 C g−1 and 1836 C cm−3 at 1 A g−1 for an ≈ 10 µm thick film; and 767 C g−1 and 1664 C cm−3 at 1 A g−1 for ≈ 50 µm thick film. To further increase the energy density, hybrid capacitors are fabricated with MoO3/Ti3C2Tz films as the negative electrodes and nitrogen‐doped activated carbon as the positive electrodes. This device delivers maximum gravimetric/volumetric energy densities of 31.2 Wh kg−1 and 39.2 Wh L−1, respectively. The cycling stability of 94.2% retention ratio after 10 000 continuous charge/discharge cycles is also noteworthy. The high energy density achieved in this work can pave the way for practical applications of MXene‐containing materials in energy storage devices. MoO3/Ti3C2Tz MXene free‐standing films exhibit an excellent combination of high gravimetric and volumetric capacities. The asymmetric supercapacitors with MoO3/Ti3C2Tz anodes and nitrogen‐doped activated carbon cathodes deliver maximum gravimetric and volumetric energy densities of 31.2 Wh kg−1 and 39.2 Wh L−1, respectively. Binder‐free films with high mass loading bode well for practical applications.

Electrochromic (EC) materials that change color with voltage have been widely studied for use in dynamic windows. However, colorless-to-colorful switching with high contrast ratio is generically unattainable, especially for colorless-to-black electrochromic materials with an ultrahigh contrast ratio over the entire visible region. In this work, we developed Nb 1.33 C MXene-based dynamic windows with colorless-to-black switching of up to 75% reversible change in transmittance from 300 to 1,500 nm. By exploring the electrochromic effects of different electrolytes through in situ optical changes and electrochemical quartz crystal microbalance (EQCM), it is found that electrochromic behavior is greatly influenced by the extent of reversible Li + insertion/deinsertion between the two-dimensional Nb 1.33 C MXene nanosheets. In addition, a colorless-to-black EC device based on Nb 1.33 C with an overall integrated contrast ratio over 80% was successfully constructed by a solution-processable spin coating method. This work enables a simple route to fabricate MXene-based high-performance electrochromic smart windows, which is important for further expanding the application of MXenes to optoelectronic and photonic applications.

HighlightsSmall size V2SnC MAX phase was prepared by the molten salt method.V2SnC MAX phase electrode is able to deliver high gravimetric capacity up to 490 mAh g−1 and volumetric capacity of 570 mAh cm−3A charge storage mechanism with V2C-Li redox and Sn–Li alloying dual reactions was proposedMAX phases are gaining attention as precursors of two-dimensional MXenes that are intensively pursued in applications for electrochemical energy storage. Here, we report the preparation of V2SnC MAX phase by the molten salt method. V2SnC is investigated as a lithium storage anode, showing a high gravimetric capacity of 490 mAh g−1 and volumetric capacity of 570 mAh cm−3 as well as superior rate performance of 95 mAh g−1 (110 mAh cm−3) at 50 C, surpassing the ever-reported performance of MAX phase anodes. Supported by operando X-ray diffraction and density functional theory, a charge storage mechanism with dual redox reaction is proposed with a Sn–Li (de)alloying reaction that occurs at the edge sites of V2SnC particles where Sn atoms are exposed to the electrolyte followed by a redox reaction that occurs at V2C layers with Li. This study offers promise of using MAX phases with M-site and A-site elements that are redox active as high-rate lithium storage materials.