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The use of silicon nanostructures in solar cells offers a number of benefits, such as the fact they can be used on flexible substrates. A silicon wire-array structure, containing reflecting nanoparticles for enhanced absorption, is now shown to achieve 96% peak absorption efficiency, capturing 85% of light with only 1% of the silicon used in comparable commercial cells. Si wire arrays are a promising architecture for solar-energy-harvesting applications, and may offer a mechanically flexible alternative to Si wafers for photovoltaics 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 . To achieve competitive conversion efficiencies, the wires must absorb sunlight over a broad range of wavelengths and incidence angles, despite occupying only a modest fraction of the array’s volume. Here, we show that arrays having less than 5% areal fraction of wires can achieve up to 96% peak absorption, and that they can absorb up to 85% of day-integrated, above-bandgap direct sunlight. In fact, these arrays show enhanced near-infrared absorption, which allows their overall sunlight absorption to exceed the ray-optics light-trapping absorption limit 18 for an equivalent volume of randomly textured planar Si, over a broad range of incidence angles. We furthermore demonstrate that the light absorbed by Si wire arrays can be collected with a peak external quantum efficiency of 0.89, and that they show broadband, near-unity internal quantum efficiency for carrier collection through a radial semiconductor/liquid junction at the surface of each wire. The observed absorption enhancement and collection efficiency enable a cell geometry that not only uses 1/100th the material of traditional wafer-based devices, but also may offer increased photovoltaic efficiency owing to an effective optical concentration of up to 20 times.

Nature Materials 9, 239–244 (2010); published online: 14 February 2010; corrected after print: 19 February 2010. In the version of this Letter originally published, the first sentence in the Acknowledgements should have been: “This work was supported by BP and in part by the Department of Energy EFRC program under grant DE-SC0001293, and made use of facilities supported by the Center for Science and Engineering of Materials, an NSF Materials Research Science and Engineering Center at Caltech.

A computational nanophotonic design library for gradient-based optimization called SPINS is presented. Borrowing the concept of computational graphs, SPINS is a design framework that emphasizes flexibility and reproducible results. The mathematical and architectural details to achieve these goals are presented, and practical considerations and heuristics for using inverse design are discussed, including the choice of initial condition and the landscape of local minima.

A major difficulty in applying computational design methods to nanophotonic devices is ensuring that the resulting designs are fabricable. Here, we describe a general inverse design algorithm for nanophotonic devices that directly incorporates fabrication constraints. To demonstrate the capabilities of our method, we designed a spatial-mode demultiplexer, wavelength demultiplexer, and directional coupler. We also designed and experimentally demonstrated a compact, broadband 1 × 3 power splitter on a silicon photonics platform. The splitter has a footprint of only 3.8 × 2.5  μ m, and is well within the design rules of a typical silicon photonics process, with a minimum radius of curvature of 100 nm. Averaged over the designed wavelength range of 1400–1700 nm, our splitter has a measured insertion loss of 0.642 ± 0.057 dB and power uniformity of 0.641 ± 0.054 dB.

An on-chip integrated wavelength demultiplexer designed using an inverse computational algorithm is experimentally demonstrated. 1,300 and 1,550 nm wavelength light is sorted in a device area of just 2.8 × 2.8 μm 2 . Integrated photonic devices are poised to play a key role in a wide variety of applications, ranging from optical interconnects 1 and sensors 2 to quantum computing 3 . However, only a small library of semi-analytically designed devices is currently known 4 . Here, we demonstrate the use of an inverse design method that explores the full design space of fabricable devices and allows us to design devices with previously unattainable functionality, higher performance and robustness, and smaller footprints than conventional devices 5 . We have designed a silicon wavelength demultiplexer that splits 1,300 nm and 1,550 nm light from an input waveguide into two output waveguides, and fabricated and characterized several devices. The devices display low insertion loss (∼2 dB), low crosstalk (<−11 dB) and wide bandwidths (>100 nm). The device footprint is 2.8 × 2.8 μm 2 , making this the smallest dielectric wavelength splitter.

Nanophotonics has emerged as a powerful tool for manipulating light on chips. Almost all of today's devices, however, have been designed using slow and ineffective brute-force search methods, leading in many cases to limited device performance. In this article, we provide a complete demonstration of our recently proposed inverse design technique, wherein the user specifies design constraints in the form of target fields rather than a dielectric constant profile and in particular we use this method to demonstrate a new demultiplexing grating. The novel grating, which has not been developed using conventional techniques, accepts a vertical-incident Gaussian beam from a free-space and separates O-band (1300 nm) and C-band (1550 nm) light into separate waveguides. This inverse design concept is simple and extendable to a broad class of highly compact devices including frequency filters, mode converters and spatial mode multiplexers.

Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10 GHz modulation speed and less than 1 fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics. Photonic alternatives to electrical circuits require low energy demand and fast modulation speed, which has proven difficult for on-chip devices. Using quantum dot photonic crystal nanocavities, Vučković et al . demonstrate an electrically-switchable light-emitting diode with such capabilities.