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We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal. In particular, by switching the graphene/ferromagnet interaction, spin transport reveals magneto-resistance signal MR > 80% in junctions with low resistance × area products. Descriptions based only on a simple K-point filtering picture (i.e. MR increase with the number of layers) are not sufficient to predict the behavior of our devices. We emphasize that hybridization effects need to be taken into account to fully grasp the spin properties (such as spin dependent density of states) when 2D materials are used as ultimately thin interfaces. While this is only a first demonstration, we thus introduce the fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs. 2D materials are foreseen as an opportunity to tailor spintronics devices interfaces, a.k.a spinterfaces. Here, using state-of-the-art large-scale integration in spin-valves, authors demonstrate that hybridization of graphene with a metallic spin source results in strong spin filtering effects.

Superconductivity can be induced in a normal material via the 'leakage' of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene's unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the 'leakage' mechanism--the Andreev reflection--and the potential of supercurrent modulation through electrical gating. Despite the interest of high-temperature superconductors in that context, realizations have been exclusively based on low-temperature ones. Here we demonstrate a gate-tunable, high-temperature superconducting proximity effect in graphene. Notably, gating effects result from the perfect transmission of superconducting pairs across an energy barrier--a form of Klein tunnelling, up to now observed only for non-superconducting carriers--and quantum interferences controlled by graphene doping. Interestingly, we find that this type of interference becomes dominant without the need of ultraclean graphene, in stark contrast to the case of low-temperature superconductors. These results pave the way to a new class of tunable, high-temperature Josephson devices based on large-scale graphene.

Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the leakage mechanism the Andreev reflection and the potential of supercurrent modulation through electrical gating. Despite the interest of high-temperature superconductors in that context, realizations have been exclusively based on low-temperature ones. Here we demonstrate gate-tunable, high-temperature superconducting proximity effect in graphene. Notably, gating effects result from the perfect transmission of superconducting pairs across an energy barrier -a form of Klein tunneling, up to now observed only for non-superconducting carriers- and quantum interferences controlled by graphene doping. Interestingly, we find that this type of interferences become dominant without the need of ultra-clean graphene, in stark contrast to the case of low-temperature superconductors. These results pave the way to a new class of tunable, high-temperature Josephson devices based on large-scale graphene.