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In India as far as drugs are concern there is post marketing vigilance system usually focus on adverse drug reactions recently much consideration is given to medical devices, blood products, special nutritional and natural products, whereas less attention has been addressed to adverse reactions related to cosmetic products. The Federal Food, Drug and Cosmetic Act defines drugs, in part, by their intended use, as articles intended for use in the diagnosis, cure, mitigation, treatment, or prevention of disease and articles (other than food) intended to affect the structure or any function of the body of man or other animals. The products covered under this definition are skin moisturizers, perfumes, lipsticks, finger nail polishes, eye and facial makeup preparations, cleansing shampoos, permanent waves, hair colors, deodorants or any other substance intended for use as a component of a cosmetic product. Some of the health risks associated with heavy metals in cosmetics are cancer, reproductive and developmental disorders, neurological problems, cardiovascular, skeletal, blood, immune system, kidney and renal problems, headaches, vomiting, nausea and diarrhea, lung damage.

The incorporation of dilute concentrations of bismuth (Bi) into traditional III V alloys leads to significant reduction in bandgap energy, making InSbBi is a promising candidate for long wavelength infrared photodetection sensors due to its small bandgap (<0.17 eV). Furthermore, InSbBi could serve as a valuable platform for spin dynamics and quantum phenomena due to its strong spin-orbit coupling. Despite its potential, the material quality of InSbBi alloys lags behind that of conventional III V semiconductors, primarily due to the substantial challenges associated with incorporating Bi into InSb and producing high-quality InSbBi with varying Bi compositions. In this study, we address these issues by developing a method for growing smooth InSbBi thin films with tunable Bi incorporation up to 1.81% by the dynamic adjustment of Sb flux and careful control of the interplay between growth temperature and Bi flux using molecular beam epitaxy. This work paves the path for high-quality InSbBi thin films for applications in photodetection, spintronics, and quantum technology.

Materials having strong coupling between different degrees of freedom such as spin, lattice, orbital, and charge are of immense interest due to their potential device applications. Here, we have stabilized the 9R phase of BaMnO3, by Sr (Ti) doping in the Ba (Mn) site using solid-state route at ambient pressure, which otherwise requires high-pressure conditions to syntheize. Crsyatl structure, phonon spectra, and their evolution with temperature are investigated using x-ray diffraction and Raman spectroscopic techniques. Temperature-dependent magnetization data reveal an antiferromagnetic transition at around (TN =) 262 K and 200 K for Ba0.9Sr0.1MnO3 and BaMn0.9Ti0.1O3, respectively. No structural phase transition or lattice instabilities are observed in the measured temperature range (80 - 400 K) for both the compounds. We have observed anomalous behaviour of four different phonon modes involving Mn or O-vibrations at low temperatures which have been attributed to spin-phonon coupling.

Multiferroics possess two or more switchable states such as polarization, magnetization, etc. Phonon excitations in multiferroic phase are strongly modified by magnetoelectric coupling, spin-phonon coupling, and anharmonic phonon-phonon interactions. Here, we have investigated the correlation between phonons and multiferroic order parameters in hexagonal BaMO3: M = Ti1-x(Mn/Fe)x systems using powder x-ray diffraction (PXRD), Raman spectroscopic, and magnetic measurements. The structural transformation from a polar tetragonal to a non-polar 6H-type hexagonal phase is observed as a function of doping (Mn/Fe). Magnetic measurements reveal that the BaTi1-xMnxO3 is paramagnetic while BaTi1-xFexO3 exhibits composition-dependent ferromagnetic order. Importantly, Anomalous temperature-dependence is observed for two phonons (E1g at ~ 152 cm-1 and A1g at ~ 636 cm-1) in both the systems exhibiting similar trend with the doping (Mn/Fe) irrespective of the differences in their magnetic ground state. Hence, we attribute the phonon anomalies in both the (Fe/Mn doped) systems to strong anharmonic phonon-phonon interactions arising from large atomic displacements involved in the vibrations. In addition, we have also observed signatures of correlation of phonons with ferroelectric phase as well as magnetically ordered state suggesting the presence of a strain-induced magnetoelectric coupling in the doped compounds.

Antiferromagnetic materials with strong spin-phonon coupling have the potential for spintronic applications. Here, we report the structural, magnetic, and vibrational properties of 12R-BaTi0.4Mn0.6O3. Temperature-dependent magnetization data show the presence of weak antiferromagnetic interactions. Correlation between magnetic and vibrational properties are probed by using temperature-dependent Raman spectroscopic measurements. Two of the Raman active phonons show deviation from anharmonic behaviour at low temperatures which can be attributed to spin-phonon coupling. The strength of coupling is estimated using mean-field approximation and is found to be 1.1 and 1.2 cm-1 for phonons at 530 and 717 cm-1, respectively.

Spin-phonon coupling, the interaction of spins with surrounding lattice is a key parameter to understand the underlying physics of multiferroics and engineer their magnetization dynamics. Elementary excitations in multiferroic materials are strongly influenced by spin-phonon interaction, making Raman spectroscopy a unique tool to probe these coupling(s). Recently, it has been suggested that the dielectric and magnetic properties of 15R-type hexagonal BaMnO3 are correlated through the spin-lattice coupling. Here, we report the observation of an extensive renormalization of the Raman spectrum of 15R-BaMnO3 at 230 K, 280 K, and 330 K. Magnetic measurements reveal the presence of a long-range and a short-range magnetic ordering in 15R-BaMnO3 at 230 K and 330 K, respectively. The Raman spectrum shows the appearance of new Raman modes in the magnetically ordered phases. Furthermore, an additional Raman phonon appears below ~ 280 K, possibly arising from a local lattice-distortion due to the displacement of Mn-ions, that exhibits anomalous shift with temperature. The origin of the observed renormalization and phonon anomalies in Raman spectra are discussed based on the evidences from temperature- and magnetic-field-dependent Raman spectra, temperature-dependent x-ray diffraction, magnetization, and specific heat measurements. Our results indicate the presence of magnetostriction and spin-phonon coupling in 15R-BaMnO3 thus suggesting that the optical phonons are strongly correlated to its magnetoelectric properties.

The interplay between different degrees of freedom such as charge, spin, orbital, and lattice has received a great deal of interest due to its potential to engineer materials properties and their functionalities for device applications. In this work, we have explored the crystallographic phase diagram of Ba1-xSrxMnO3 and studied the correlation between two degrees of freedom, namely phonons and spins using magnetization and inelastic light scattering measurements. The system undergoes a series of crystallographic phase transitions 2H -> 9R -> 4H as a function of doping (Sr) as observed by X-ray diffraction measurements. Investigation of their temperature-dependent magnetization reveals a para- to antiferro-magnetic transition for all the compositions. An Eg phonon in the 9R phase and an E1g phonon in the 4H phase involving Mn or O-vibrations, show anomalous temperature-dependence in the antiferromagnetic phase arising due to spin-phonon coupling.

In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the interfaces and top surfaces of the nanowires can significantly degrade their electrical properties. One effective method to mitigate these issues is the incorporation of buffer and capping layers. In this work, we achieved a wider growth selectivity window of InGaAs in the presence of atomic hydrogen (H) and employed it as buffer and capping layers for SAG InAs nanowires to enhance their electrical properties. Hall measurements on InAs nanowires, with and without InGaAs buffer and/or capping layers, revealed that incorporating closely lattice-matched InGaAs buffer and capping layers to InAs nanowires nearly tripled the electron mobility and doubled the phase coherence length compared to nanowires without these layers. These findings demonstrate that the use of InGaAs buffer and capping layers is a crucial strategy for significantly enhancing the quality of InAs nanowires, unlocking their full potential for high performance electronics and quantum devices.

The incorporation of dilute concentrations of bismuth (Bi) into traditional III V alloys leads to significant reduction in bandgap energy, making InSbBi is a promising candidate for long wavelength infrared photodetection sensors due to its small bandgap (<0.17 eV). Furthermore, InSbBi could serve as a valuable platform for spin dynamics and quantum phenomena due to its strong spin-orbit coupling. Despite its potential, the material quality of InSbBi alloys lags behind that of conventional III V semiconductors, primarily due to the substantial challenges associated with incorporating Bi into InSb and producing high-quality InSbBi with varying Bi compositions. In this study, we address these issues by developing a method for growing smooth InSbBi thin films with tunable Bi incorporation up to 1.81% by the dynamic adjustment of Sb flux and careful control of the interplay between growth temperature and Bi flux using molecular beam epitaxy. This work paves the path for high-quality InSbBi thin films for applications in photodetection, spintronics, and quantum technology.

Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence of their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb\\(_2\\) flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (104) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1-10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection high-energy electron diffraction patterns, surface morphology, and transport properties. Our DFT calculations show that the anisotropic features originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm that the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi\\(_{1-x}\\)Sb\\(_x\\) thin films with similar lattice parameters and an identical crystal structure as well as functional heterostructures of them with III-V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.