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"Rodwell, M J W"
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Harper's illustrated biochemistry
Integrates detailed discussions of biochemical diseases, updated clinical information, case studies, and extensive illustrations, this classic can be used as both a text and USMLE review book. Extensively illustrated with 500+ clear, descriptive illustrations and new chapters on amino acids and peptides, structures of protein, and the Human Genome project.
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Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) were grown metamorphically on GaAs substrates by molecular beam epitaxy. In these growths, InAlAs, AlGaAsSb, and InP metamorphic buffer layers were investigated. The InAlAs and AlGaAsSb buffer layers had linear compositional grading while the InP buffer layer used direct binary deposition. The transistors grown on these three layers showed similar characteristics. Bulk thermal conductivities of 10.5, 8.4, and 16.1 W/m K were measured for the InAlAs, AlGaAsSb, and InP buffer layers, as compared to the 69 W/m K bulk thermal conductivity of bulk InP. Calculations of the resulting HBT junction temperature strongly suggest that InP metamorphic buffer layers should be employed for metamorphic HBTs operating at high power densities.
Journal Article
75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs
A 75 GHz static frequency divider in InAlAs/InGaAs transferred-substrate heterojunction bipolar transistor (HBT) technology is reported. This is the highest reported frequency of operation for a static frequency divider. The circuit has 60 transistors and dissipates 800 mW. The divider was operated at a clock frequency of 5.0 to 75 GHz.
Journal Article
2-bit adder: Carry and sum logic circuits at 19 GHz clock frequency in InAlAs/InGaAs HBT technology
Carry and sum circuits for a 2-bit adder used in a pipelined 2N-bit adder-accumulator architecture are reported. To obtain high clock rates in a design with multiple gate delays a novel merged AND-OR-Latch structure using four-level series gated current steering logic is employed. These integrated circuits were fabricated in InAlAs/InGaAs transferred substrate heterojunction bipolar transistor technology and operate up to 19 GHz clock rate.
Journal Article
0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
An InP double hetero-junction bipolar transistor (DHBT) distributed power amplifier MMIC, with 35 dB gain, 42 GHz bandwidth and 15 dBm output power is reported. This represents, the highest power and largest gain reported over this bandwidth from a single chip HBT amplifier. A lumped preamplifier, with a novel distributed output is used to obtain high gain and wide bandwidth at these power levels.
Journal Article
Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors
Small signal RF characteristics of an AlGaN/GaN HBT are presented. The devices had a short circuit current gain cutoff frequency of 2 GHz. The roll off of the short-circuit current gain (H sub(21)) of the device was less than 20 dB/decade. We propose that this is due to the distributed nature of the base-collector parasitic resistance-capacitance network caused by a high sheet resistance in the base (100 k Omega /SQO) and high base contact resistances. Finite element small signal equivalent circuit simulations support this explanation.
Journal Article
40 Gbit/s optical receiver module with high conversion gain and sensitivity
An optical receiver for 40 Gbit/s communication systems with 8,274 V/W conversion gain and 950 mVp-p limiting differential output is reported. A back-to-back sensitivity of -9.4 dBm at a bit error rate of 10...12 was observed for a 231-1 pseudorandom binary sequence. The receiver incorporates an InP based pin diode, a transimpedance amplifier and a limiting amplifier. This is the largest conversion gain with high sensitivity reported for 40 Gbit/s receivers without optical amplification.
Journal Article
Broadband lumped HBT amplifiers
The authors report the realization of wideband amplifiers using AlInAs /GaInAs transferred-substrate heterojunction bipolar transistors (HBTs). The first amplifier is in the f sub( tau ) doubler configuration with an input emitter follower while the second is a Darlington stage designed for high gain. The former had a low frequency gain of 8.2 dB and a 3 dB bandwidth of 80 GHz, while the latter had a low frequency gain of 18 dB and a bandwidth of 50 GHz.
Journal Article