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Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

The chiral-induced spin selectivity (CISS) effect enables the spin-selective transport of electrons through chiral systems, linking handedness with spin polarization. This review provides a comprehensive examination of the emerging field of chiral electrocatalysis, detailing also the extensive experimental and theoretical endeavor conducted to gain a deeper understanding of the fundamental physical principles and mechanistic characteristics of this phenomenon. In particular, the CISS effect has garnered significant attention within the scientific community due to its potential for broad applicability across several fields, ranging from spintronics to biology. Among them, the prospective harnessing of the CISS effect into electrocatalytic processes offers an innovative strategy to improve the performance of energy conversion and storage technologies. This review deeply examines the practical applications of the CISS effect across different electrocatalytic reactions, with particular emphasis on its influence on the oxygen reduction reaction (ORR) and its critical role in energy conversion systems where the ORR reaction is a key process, such as in metal–air batteries, whose safety and performance can be enhanced through spin-selective electron transport.

Recent advances in nanotechnology, including the development of nanoparticles, thin films, and superlattices, have revitalized research in thermoelectricity by enabling independent control of thermal and electrical transport, overcoming longstanding efficiency limitations and expanding opportunities for sustainable energy generation and miniaturized device applications. Tin dioxide (SnO2) has recently attracted increasing attention as a thermoelectric material owing to its properties, such as high-temperature chemical and structural stability, non-toxicity, and the abundance of constituent elements. Current research efforts have been directed toward enhancing its thermoelectric performance through strategies such as elemental doping, nanostructuring, strain engineering, and the development of composite systems. In this study, we investigate the effects of Mg substitutional doping on the thermoelectric characteristics of SnO2. We synthesize undoped and Mg-doped SnO2 nanoparticles (0.05%, 0.10%, and 0.15%) using a straightforward hydrothermal technique. The investigation of the undoped and doped materials revealed that SnO2 possesses a tetragonal rutile-type structure, as determined through structural and morphological examination. The crystalline size of all of the samples decreases as the Mg doping concentration is increased. Hall measurement and Seebeck coefficient measurements have been employed for assessing the thermoelectric characteristics. As the Mg content increased, both the Seebeck coefficient and electrical conductivity value increased from −20 μV/K to −91 μV/K and 29.8 S/cm to 112.6 S/cm, confirming the presence of semiconductor behavior. The 0.15% Mg-doped sample demonstrates the highest power factor when evaluated at a temperature of 150 K, yielding a value of 9.4 × 10−5 WK−2m−1.

In this work, we isolate individual wurtzite InAs nanowires and fabricate electrical contacts at both ends, exploiting the single nanostructures as building blocks to realize two different architectures of conductometric sensors: (a) the nanowire is drop-casted onto—supported by—a SiO2/Si substrate, and (b) the nanowire is suspended at approximately 250 nm from the substrate. We test the source-drain current upon changes in the concentration of humidity, ethanol, and NO2, using synthetic air as a gas carrier, moving a step forward towards mimicking operational environmental conditions. The supported architecture shows higher response in the mid humidity range (50% relative humidity), with shorter response and recovery times and lower detection limit with respect to the suspended nanowire. These experimental pieces of evidence indicate a minor role of the InAs/SiO2 contact area; hence, there is no need for suspended nanostructures to improve the sensing performance. Moreover, the sensing capability of single InAs nanowires for detection of NO2 and ethanol in the ambient atmosphere is reported and discussed.

Biosensors have emerged as a rapidly evolving area of research, offering transformative potential across biomedical diagnostics, environmental monitoring, and pharmaceutical applications. Among the diverse range of biosensing technologies, graphene-based surface plasmonic resonance (SPR) biosensors have attracted particular interest due to their exceptional sensitivity, scalability for mass production, and cost-effective fabrication processes. This study explores the operational principles and current design methodologies of graphene-based SPR biosensors, with a special emphasis on the role of electrolyte gating and its impact on sensor performance. Furthermore, the influence of graphene’s quantum capacitance is investigated as a critical parameter for improving the accuracy and reliability of performance predictions in the proposed sensor configuration. Computational analysis of sensitivity and key performance metrics was conducted. Notably, key performance metrics of the sensor improved upon incorporating quantum capacitance effects into the simulation framework. At a β2-microglobulin concentration of 0.00118 g/L, the sensitivity increased to 174 GHz·g/L, the figure of merit reached 0.55 L/g, the quality factor was 0.01, the signal-to-noise ratio (SNR) rose to 0.008, and the detection accuracy (DA) reached 0.08 L/THz, demonstrating the significant impact of quantum capacitance on the sensor’s performance. These findings highlight the potential of quantum-electrostatic considerations to enhance the precision and efficacy of graphene-based SPR biosensors, paving the way for the development of next-generation biosensing platforms with improved analytical capabilities. Unlike conventional graphene SPR biosensors, which primarily detect refractive index changes near the graphene surface, our model explicitly considers the electrostatic effect of biomolecules on graphene’s Fermi energy. By modelling β2-microglobulin as a charged species, we compute the resulting electric double layer and incorporate quantum capacitance in series. This amplifies the charge-induced modulation of graphene’s optical conductivity, and, combined with a graphene perfect absorber design, leads to enhanced plasmonic resonance shifts. Consequently, our approach achieves higher sensitivity and more precise detection of biomolecular interactions compared to traditional simulations.

Nanowires （NWs） are ideal nanostructures for exploring the effects of low dimensionality and thermal conductivity suppression on thermoelectric behavior. However, it is challenging to accurately measure temperature gradients and heat flow in such systems. Here, using a combination of spatially resolved Raman spectroscopy and transport measurements, we determine all the thermoelectric properties of single Se-doped InSb NWs and quantify the figure of merit ZT. The measured laser-induced heating in the NWs and associated electrical response are well described by a 1D heat equation model. Our method allows the determination of the thermal contact resistances at the source and drain electrodes of the NW, which are negligible in our system. The measured thermoelectric parameters of InSb NWs agree well with those obtained based on field-effect transistor Seebeck measurements.

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process.

The thermo-mechanical properties of streptavidin-conjugated gold nanospheres, adhered to a surface via complex molecular chains, are investigated by two-color infrared asynchronous optical sampling pump-probe spectroscopy. Nanospheres with different surface densities have been deposited and exposed to a plasma treatment to modify their polymer binding chains. The aim is to monitor their optical response in complex chemical environments that may be experienced in, e.g., photothermal therapy or drug delivery applications. By applying unsupervised learning techniques to the spectroscopic traces, we identify their thermo-mechanical response variation. This variation discriminates nanospheres in different chemical environments or different surface densities. Such discrimination is not evident based on a standard analysis of the spectroscopic traces. This kind of analysis is important, given the widespread application of conjugated gold nanospheres in medicine and biology.

Iontronics exploits mobile ions within electrolytes to control the electronic properties of materials and devices' electrical and optical response. In this frame, ionic liquids are widely exploited for the gating of semiconducting nanostructure devices, offering superior performance compared to conventional dielectric gating. In this work, we engineer ionic liquid gated InAs nanowire-based field effect transistors and adopt the set-and-freeze dual gate device operation to probe the nanowires in several ionic gate regimes. We exploit standard back-gating at 150 K, when the ionic liquid is frozen and any crosstalk between the ionic gate and the back gate is ruled out. We demonstrate that the liquid gate polarization has a persistent effect on the nanowire properties. This effect can be conveniently exploited to fine-tune the properties of the nanowires and enable new device functionalities. Specifically, we correlate the modification of the ionic environment around the nanowire to the transistor threshold voltage and hysteresis, on/off ratio and current level retention times. Based on this, we demonstrate memory operations of the nanowire field effect transistors. Our work shines a new light on the interaction between electrolytes and semiconducting nanostructures, providing useful insights for future applications of nanodevice iontronics.

Graphene-based ion-sensitive field-effect transistors can operate as biosensors by utilizing the formation of an electric double layer at the interface between the electrolyte and the graphene channel, enabling high sensitivity, scalability, and cost-effective fabrication. In this work, we focus on the working principles and current methodologies associated with these devices, making a comparative analysis of different models that describe the electric double layer in the electrolyte, referring to sodium ions (Na+) as a case study for the detection performance of the graphene biosensor, and taking into account the impact of graphene quantum capacitance. Our study addresses the sensitivity of graphene field-effect transistors within the framework of the Gouy–Chapman model, as well as the Stern model, computing device sensitivities of 3200 V/M and 5500 V/M, respectively. By incorporating the impact of graphene’s quantum capacitance in the calculations, increased sensitivity up to 5620 V/M was found. The present work shines light on the rationalization of graphene-based biosensors’ operation and performance.