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"Rysbaev, K. Zh"
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Investigation of High-Intensity Ion Beam Generation in the Diode with External Magnetic Insulation and Explosive Plasma Emission Source
The ion B
r
-diode in which plasma is generated under the action of a negative pre-pulse voltage is presented. Preliminary plasma formation allows the energy released in the diode during a positive voltage pulse to be increased. The high-energy ion beam parameters are investigated for the magnetic field induction changing from 0.8В
cr
to 1.7B
cr
.
Journal Article
Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions
Methods of electron spectroscopy, low-energy electron diffraction, Auger spectroscopy, elastically scattered electron spectroscopy, and photoelectron spectroscopy are used to study the chemical composition and the band structure of a Si(111) surface. Single-crystal layers of metal silicides, whose secondary-emission properties are superior to the properties of Si, are formed on the Si surface after the ion implantation of B, P, and Ba ions and ions of alkali metals and the subsequent annealing of the ion-implanted layers.[PUBLICATION ABSTRACT]
Journal Article