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In the Fe-doped GaN phase-separated magnetic semiconductor Ga δ FeN, the presence of embedded γ ′ - Ga y Fe 4 - y N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous X-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) γ ′ - Ga y Fe 4 - y N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3 c positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450 to 500 K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.

A novel biologically active thiosemicarbazide derivative ligand L (N-[(phenylcarbamothioyl)amino]pyridine-3-carboxamide) and a series of its five metal(II) complexes, namely: [Co(L)Cl2], [Ni(L)Cl2(H2O)], [Cu(L)Cl2(H2O)], [Zn(L)Cl2] and [Cd(L)Cl2(H2O)] have been synthesized and thoroughly investigated. The physicochemical characterization of the newly obtained compounds has been performed using appropriate analytical techniques, such as 1H and l3C nuclear magnetic resonance (NMR), inductively coupled plasma (ICP), thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FTIR) and magnetic measurements. In order to study the pharmacokinetic profile of the compounds, ADMET analysis was performed. The in vitro studies revealed that the synthesized compounds exhibit potent biological activity against A549 human cancer cell line.

The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin–orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

Solid-state wafers are indispensable components in material science as substrates for epitaxial homo- or heterostructures or carriers for two-dimensional materials. However, reliable determination of magnetic properties of nanomaterials in volume magnetometry is frequently affected by unexpectedly rich magnetism of these substrates, including significant magnetic anisotropy. Here, we describe a simplified experimental routine of magnetic anisotropy assessment, which we exemplify and validate for epi-ready sapphire wafers from various sources. Both the strength and the sign of magnetic anisotropy are obtained from carefully designed temperature-dependent measurements, which mitigate all known pitfalls of volume SQUID magnetometry and are substantially faster than traditional approaches. Our measurements indicate that in all the samples, two types of net paramagnetic contributions coexist with diamagnetism. The first one can be as strong as 10% of the base diamagnetism of sapphire [−3.7(1) × 10−7 emu/gOe], and when exceeds 2%, it exhibits pronounced magnetic anisotropy, with the easy axis oriented perpendicularly to the face of c-plane wafers. The other is much weaker, but exhibits a ferromagnetic-like appearance. These findings form an important message that nonstandard magnetism of common substrates can significantly influence the results of precise magnetometry of nanoscale materials and that its existence must be taken for granted by both industry and academia.

The electric field control of magnetization is of significant interest in materials science due to potential applications in many devices such as sensors, actuators, and magnetic memories. Here, we report magnetization changes generated by an electric field in ferromagnetic Ga 1− x Mn x N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr x (Bi 1− y Sb y ) 1− x Te 3 , in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature. Magnetization switching is a key process in magnetic memories and information storage but is energetically costly, requiring an external magnetic field or spin polarized currents. Here, Ga 1− x Mn x N is demonstrated to be one of the rare piezoelectric ferromagnetic homogeneous compounds where uniaxial magnetic anisotropy and magnetization can be controlled by an electric field.

Steadily growing interest in magnetic characterization of organic compounds for therapeutic purposes or of other irregularly shaped specimens calls for refinements of experimental methodology to satisfy experimental challenges. Encapsulation in capsules remains the method of choice, but its applicability in precise magnetometry is limited. This is particularly true for minute specimens in the single milligram range as they are outweighed by the capsules and are subject to large alignment errors. We present here a completely new experimental methodology that permits 30-fold in situ reduction of the signal of capsules by substantially restoring the symmetry of the sample holder that is otherwise broken by the presence of the capsule. In practical terms it means that the standard 30 mg capsule is seen by the magnetometer as approximately a 1 mg object, effectively opening the window for precise magnetometry of single milligram specimens. The method is shown to work down to 1.8 K and in the whole range of the magnetic fields. The method is demonstrated and validated using the reciprocal space option of MPMS-SQUID magnetometers; however, it can be easily incorporated in any magnetometer that can accommodate straw sample holders (i.e., the VSM-SQUID). Importantly, the improved sensitivity is accomplished relying only on the standard accessories and data reduction method provided by the SQUID manufacturer, eliminating the need for elaborate raw data manipulations.

Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and ab initio studies, that the codoping of GaN:Mn with Mg allows to control the Mn n + charge and spin state in the range 3≤ n ≤5 and 2≥ S ≥1. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg k , where the number of ligands k is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities and generally represent a fresh perspective for magnetic semiconductors.

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10 −5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10 −5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

The transition from a ferromagnetic to a paramagnetic state is observed directly as the density of carriers that mediate spin–spin coupling is varied. The measurement was performed on thin films of GaMnAs and was made possible by superconducting quantum interference devices (SQUIDS). The question of whether the Anderson–Mott localization enhances or reduces magnetic correlations is central to the physics of magnetic alloys 1 . Particularly intriguing is the case of (Ga, Mn)As and related magnetic semiconductors, for which diverging theoretical scenarios have been proposed 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 . Here, by direct magnetization measurements we demonstrate how magnetism evolves when the density of carriers mediating the spin–spin coupling is diminished by the gate electric field in metal–insulator–semiconductor structures of (Ga, Mn)As. Our findings show that the channel depletion results in a monotonic decrease of the Curie temperature, with no evidence for the maximum expected within the impurity-band models 3 , 5 , 8 , 9 . We find that the transition from the ferromagnetic to the paramagnetic state proceeds by means of the emergence of a superparamagnetic-like spin arrangement. This implies that carrier localization leads to a phase separation into ferromagnetic and non-magnetic regions, which we attribute to critical fluctuations in the local density of states, specific to the Anderson–Mott quantum transition.

The first coordination compound of copper and tiglic acid named tetrakis(μ-tiglato)bis(tiglic acid)dicopper(II) was synthesized and crystallized from water solution. Its structure was determined and analyzed based on X-ray diffraction measurement. The paddle-wheel coordination system of the investigated compound was compared with other similar copper structures known in the literature. The Hirshfeld analysis was used for the detailed analysis of intermolecular interaction. The new compound was also characterized in terms of infrared absorption, thermal, and magnetic properties. The antiferromagnetic coupling of copper ions was found.