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Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi 2 Te 3 topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches −22% at 8 T. The interplay between negative and positive magnetoresistance can be understood in terms of the competition between dephasing and spin-orbit scattering time scales. Based on the first-principles calculations within a density functional theory framework, we demonstrate that disorder (substitutional) by Ga + ion milling process, which is used to fabricate nanowires, induces local magnetic moments in Bi 2 Te 3 crystal that can lead to spin-dependent scattering of surface and bulk electrons. These experimental findings show a significant advance in the nanoscale spintronics applications based on longitudinal magnetoresistance in TIs. Our experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals.

We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi 2 Se 3 ). The value of the exponent ( d  + 1) −1 in the hopping equation was extracted as ~ 1 2 for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hopping transport mechanism in a strongly disordered system. High localization lengths (0.5 nm, 20 nm) were calculated for the devices. A careful analysis of the temperature dependent fluctuations present in the magnetoresistance curves, using the standard Universal Conductance Fluctuation theory, indicates the presence of 2D topological surface states. Also, the surface state contribution to the conductance was found very close to one conductance quantum. We believe that our experimental findings shed light on the understanding of quantum transport in disordered topological insulator based nanostructures.

Due to miniaturization of device dimensions, the next generation’s photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm–1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi 2 Te 3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi 2 Te 3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi 2 Te 3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi 2 Se 3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi 2 Se 3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.

Uniform polycrystalline bismuth telluride (BiTe) nanowires of diameter 100 nm to 150 nm and hexagonal nanoplates with thickness of 50 nm to 100 nm have been successfully synthesized by the microwave-assisted flash combustion technique. The formation of BiTe nanostructures depends on the type of fuel and the oxidant-to-fuel ratio, which in turn affect the reaction time and reaction temperature. Spark plasma sintering has been employed for compaction and sintering of both as-synthesized as well as annealed BiTe powders. Increasing the sintering temperature while using faster sintering cycles reduced the porosity, resulting in high densification while preserving the nanostructures. The dimensionless figure of merit ( ZT ) was evaluated from the Seebeck coefficient, electrical resistivity, and thermal conductivity values over the range from 300 K to 600 K. The effect of annealing on the enhancement of ZT is discussed. These evaluations suggest that the rarely studied BiTe is a potential candidate for thermoelectric applications at low temperatures.

We report a systematic investigation on structural and thermoelectric properties of Spark plasma sintered Lead telluride synthesized by hydrothermal route and a low temperature aqueous chemical route without using any organic solvent and surfactant. The as-synthesized powder samples obtained from these two different synthesis routes were identically subjected to spark plasma sintering. The size of nanocubes formed by the hydrothermal method, as evident from TEM-HRTEM images, is 50 nm; however, the samples synthesized by aqueous chemical route shows mixed morphology with particle size < 50 nm. The thermoelectric properties of spark plasma sintered bulk nanostructured samples have been measured from RT to 700K. Notably, large Seebeck coefficient and small electrical resistivity values are observed in the sample synthesized by the hydrothermal route, which is ascribed to the charge carrier energy filtering effect. A maximum reduction of ∼38% and ∼58% has been observed in the sample synthesized by the hydrothermal route and aqueous chemical route, respectively, compared to the bulk ingot. The maximum figure of merit attained is 0.18 at 673 K in the lead telluride sample synthesized by the hydrothermal route.

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures- nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.

Proximity-induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault-tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaev’s one-dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator (Bi 2 Se 3 ) nanowires proximity-coupled to conventional s-wave superconducting (W) electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale-up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long-range proximity induced superconducting order with high I c R N product in long Bi 2 Se 3 junctions. Large upper critical magnetic fields exceeding the Chandrasekhar-Clogston limit suggests the existence of robust superconducting order with spin-triplet cooper pairing. An unconventional inverse dependence of I c R N product on the width of the nanowire junction was also observed.

CaCu 3 Ti 4 O 12 nanocrystals have been synthesized by the microwave flash combustion technique. The calcined powders were spark plasma sintered at 1050 °C for 10 min. The surface morphology of sintered samples was studied by SEM. The effects of grain boundary activation energy on dielectric properties of CCTO were investigated by collecting the dielectric data in the frequencies of 30 Hz–8 MHz at temperatures of 20–100 °C under dc bias of 0–6 V. The potential energy barrier at grain boundary has been examined by dc bias experiments. It is observed that, with an increase in dc bias from 0 to 6 V, the grain boundary activation energy decreases from 0.532 to 0.463 eV. The reduction in such grain boundary activation energy results in the decrease in dielectric constant. It is noticed that CCTO ceramic at room temperature under zero dc bias has a colossal dielectric constant of 20,000 (at 100 Hz). Using the cole–cole plot, grain and grain boundary resistance are calculated to be 13 and 52,100 Ω, respectively.