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The introduction of directional solidified cast mono silicon promised a combination of the cheaper production via a casting process with monocrystalline material quality, but has been struggling with high concentration of structural defects. The SMART approach uses functional defects to maintain the monocrystalline structure with low dislocation densities. In this work, the feasibility of the SMART approach is shown for larger ingots. A G2 sized crystal with SMART and cast mono silicon parts has been analyzed regarding the structural defects via optical analysis, crystal orientation, and etch pit measurements. Photoluminescence measurements on passivated and processed samples were used for characterization of the electrical material quality. The SMART approach has successfully resulted in a crystal with mono area share over 90% and a confinement of dislocation structures in the functional defect region over the whole ingot height compared to a mono area share of down to 50% and extending dislocation tangles in the standard cast mono Si. Cellular structures in photoluminescence measurements could be attributed to cellular dislocation patterns. The SMART Si material showed very high and most homogeneous lifetime values enabling solar cell efficiencies up to 23.3%.

For the optimization of the manufacturing process of multicrystalline silicon (mc-Si) for solar cells in order to reduce energy consumption and costs, it is important to know the distribution of the impurities. In our project, we analyzed the raw materials, the crucibles, and the solidified blocks (ingots) with different methods based on neutron activation. In this paper, we present the technique and the results of the boron and hydrogen determination with prompt gamma activation analysis (PGAA). We show that the distribution of boron in the ingots can be successfully described with a Scheil curve. Concerning the raw material, the most relevant information is the average elemental mass fraction. For this purpose, PGAA is well suited since it provides a bulk analysis with detection limits down to the low ng/g range for boron and µg/g range for hydrogen. In this context, the hydrogen content of fluidized bed reactor (FBR) feedstock is discussed in detail. These were the first extensive PGAA studies of the boron and hydrogen content in mc-Si.