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Halide perovskites are a compelling candidate for the next generation of clean-energy-harvesting technologies owing to their low cost, facile fabrication and outstanding semiconductor properties. However, photovoltaic device efficiencies are still below practical limits and long-term stability challenges hinder their practical application. Current evidence suggests that strain in halide perovskites is a key factor in dictating device efficiency and stability. Here we outline the fundamentals of strain within halide perovskites relevant to photovoltaic applications and rationalize approaches to characterize the phenomenon. We examine recent breakthroughs in eliminating the adverse impacts of strain, enhancing both device efficiencies and operational stabilities. Finally, we discuss further challenges and outline future research directions for placing stress and strain studies at the forefront of halide perovskite research. An extensive understanding of strain in halide perovskites is needed, which would allow effective strain management and drive further enhancements in efficiencies and stabilities of perovskite photovoltaics. This Review provides an outlook on current understanding of the role of strain on the performance and stability of perovskite solar cells, as well as on tools to characterize strain in halide perovskite films and on strain management strategies.

Solar cells based on the organic–inorganic tri-halide perovskite family of materials have shown significant progress recently, offering the prospect of low-cost solar energy from devices that are very simple to process. Fundamental to understanding the operation of these devices is the exciton binding energy, which has proved both difficult to measure directly and controversial. We demonstrate that by using very high magnetic fields it is possible to make an accurate and direct spectroscopic measurement of the exciton binding energy, which we find to be only 16 meV at low temperatures, over three times smaller than has been previously assumed. In the room-temperature phase we show that the binding energy falls to even smaller values of only a few millielectronvolts, which explains their excellent device performance as being due to spontaneous free-carrier generation following light absorption. Additionally, we determine the excitonic reduced effective mass to be 0.104 m e (where m e is the electron mass), significantly smaller than previously estimated experimentally but in good agreement with recent calculations. Our work provides crucial information about the photophysics of these materials, which will in turn allow improved optoelectronic device operation and better understanding of their electronic properties. Direct measurement of the exciton binding energy shows that the impressive performance of perovskite solar cells arises from the spontaneous generation of free electrons and holes after light absorption.

Metal halide perovskites such as methylammonium lead iodide (CH 3 NH 3 PbI 3 ) are generating great excitement due to their outstanding optoelectronic properties, which lend them to application in high-efficiency solar cells and light-emission devices. However, there is currently debate over what drives the second-order electron–hole recombination in these materials. Here, we propose that the bandgap in CH 3 NH 3 PbI 3 has a direct–indirect character. Time-resolved photo-conductance measurements show that generation of free mobile charges is maximized for excitation energies just above the indirect bandgap. Furthermore, we find that second-order electron–hole recombination of photo-excited charges is retarded at lower temperature. These observations are consistent with a slow phonon-assisted recombination pathway via the indirect bandgap. Interestingly, in the low-temperature orthorhombic phase, fast quenching of mobile charges occurs independent of the temperature and photon excitation energy. Our work provides a new framework to understand the optoelectronic properties of metal halide perovskites and analyse spectroscopic data. Time-resolved photo-conductance and microwave conductance investigations reveal that methylammonium lead iodide perovskites have an indirect bandgap at temperatures relevant to photovoltaic applications.

The remarkable performance of hybrid perovskite photovoltaics is attributed to their long carrier lifetimes and high photoluminescence (PL) efficiencies. High-quality films are associated with slower PL decays, and it has been claimed that grain boundaries have a negligible impact on performance. We used confocal fluorescence microscopy correlated with scanning electron microscopy to spatially resolve the PL decay dynamics from films of nonstoichiometric organic-inorganic perovskites, CH3NH3PbI3(Cl). The PL intensities and lifetimes varied between different grains in the same film, even for films that exhibited long bulk lifetimes. The grain boundaries were dimmer and exhibited faster nonradiative decay. Energy-dispersive x-ray spectroscopy showed a positive correlation between chlorine concentration and regions of brighter PL, whereas PL imaging revealed that chemical treatment with pyridine could activate previously dark grains.

Organic–inorganic perovskites such as CH 3 NH 3 PbI 3 are promising materials for a variety of optoelectronic applications, with certified power conversion efficiencies in solar cells already exceeding 21%. Nevertheless, state-of-the-art films still contain performance-limiting non-radiative recombination sites and exhibit a range of complex dynamic phenomena under illumination that remain poorly understood. Here we use a unique combination of confocal photoluminescence (PL) microscopy and chemical imaging to correlate the local changes in photophysics with composition in CH 3 NH 3 PbI 3 films under illumination. We demonstrate that the photo-induced ‘brightening’ of the perovskite PL can be attributed to an order-of-magnitude reduction in trap state density. By imaging the same regions with time-of-flight secondary-ion-mass spectrometry, we correlate this photobrightening with a net migration of iodine. Our work provides visual evidence for photo-induced halide migration in triiodide perovskites and reveals the complex interplay between charge carrier populations, electronic traps and mobile halides that collectively impact optoelectronic performance. Visual evidence for photo-induced ionic migration in perovskite films without contacts is lacking. Here, the authors use a unique combination of confocal photoluminescence microscopy and chemical imaging to correlate the local changes in photophysics with composition in CH 3 NH 3 PbI 3 films under illumination.

Organic-inorganic perovskites have shown promise as high-performance absorbers in solar cells, first as a coating on a mesoporous metal oxide scaffold and more recently as a solid layer in planar heterojunction architectures. Here, we report transient absorption and photoluminescence-quenching measurements to determine the electron-hole diffusion lengths, diffusion constants, and lifetimes in mixed halide (CH3NH3PbI(3-x)Cl(x)) and triiodide (CH3NH3PbI3) perovskite absorbers. We found that the diffusion lengths are greater than 1 micrometer in the mixed halide perovskite, which is an order of magnitude greater than the absorption depth. In contrast, the triiodide absorber has electron-hole diffusion lengths of ~100 nanometers. These results justify the high efficiency of planar heterojunction perovskite solar cells and identify a critical parameter to optimize for future perovskite absorber development.

Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm2 V–1 s−1. The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.The study of the inherent charge transport behaviour of 3D lead halide perovskite is challenging, owing to entanglement with ionic migration effects and dipolar disorder instabilities. Here, the authors circumvented both challenges and found that ion migration is much suppressed in mixed metal perovskite compositions relative to pure-Pb counterparts.

Solar fuels offer a promising approach to provide sustainable fuels by harnessing sunlight 1 , 2 . Following a decade of advancement, Cu 2 O photocathodes are capable of delivering a performance comparable to that of photoelectrodes with established photovoltaic materials 3 , 4 – 5 . However, considerable bulk charge carrier recombination that is poorly understood still limits further advances in performance 6 . Here we demonstrate performance of Cu 2 O photocathodes beyond the state-of-the-art by exploiting a new conceptual understanding of carrier recombination and transport in single-crystal Cu 2 O thin films. Using ambient liquid-phase epitaxy, we present a new method to grow single-crystal Cu 2 O samples with three crystal orientations. Broadband femtosecond transient reflection spectroscopy measurements were used to quantify anisotropic optoelectronic properties, through which the carrier mobility along the [111] direction was found to be an order of magnitude higher than those along other orientations. Driven by these findings, we developed a polycrystalline Cu 2 O photocathode with an extraordinarily pure (111) orientation and (111) terminating facets using a simple and low-cost method, which delivers 7 mA cm −2 current density (more than 70% improvement compared to that of state-of-the-art electrodeposited devices) at 0.5 V versus a reversible hydrogen electrode under air mass 1.5 G illumination, and stable operation over at least 120 h. A study introduces a novel method to grow single-crystal Cu 2 O thin films with selected crystal orientations, highlighting enhanced bulk carrier mobility and carrier diffusion length along the [111] direction that yields Cu 2 O photocathodes with improved performance.

To date, there have been a plethora of reports on different means to fabricate organic–inorganic metal halide perovskite thin films; however, the inorganic starting materials have been limited to halide-based anions. Here we study the role of the anions in the perovskite solution and their influence upon perovskite crystal growth, film formation and device performance. We find that by using a non-halide lead source (lead acetate) instead of lead chloride or iodide, the perovskite crystal growth is much faster, which allows us to obtain ultrasmooth and almost pinhole-free perovskite films by a simple one-step solution coating with only a few minutes annealing. This synthesis leads to improved device performance in planar heterojunction architectures and answers a critical question as to the role of the anion and excess organic component during crystallization. Our work paves the way to tune the crystal growth kinetics by simple chemistry. Organic-inorganic metal halide perovskites are of considerable promise for efficient, easy to manufacture solar cells. Here, the authors show that the choice of anions in the perovskite solution can considerably affect the crystal growth and performance of these solar cells.

Halide perovskite materials have promising performance characteristics for low-cost optoelectronic applications. Photovoltaic devices fabricated from perovskite absorbers have reached power conversion efficiencies above 25 per cent in single-junction devices and 28 per cent in tandem devices 1 , 2 . This strong performance (albeit below the practical limits of about 30 per cent and 35 per cent, respectively 3 ) is surprising in thin films processed from solution at low-temperature, a method that generally produces abundant crystalline defects 4 . Although point defects often induce only shallow electronic states in the perovskite bandgap that do not affect performance 5 , perovskite devices still have many states deep within the bandgap that trap charge carriers and cause them to recombine non-radiatively. These deep trap states thus induce local variations in photoluminescence and limit the device performance 6 . The origin and distribution of these trap states are unknown, but they have been associated with light-induced halide segregation in mixed-halide perovskite compositions 7 and with local strain 8 , both of which make devices less stable 9 . Here we use photoemission electron microscopy to image the trap distribution in state-of-the-art halide perovskite films. Instead of a relatively uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanoscale trap clusters. By correlating microscopy measurements with scanning electron analytical techniques, we find that these trap clusters appear at the interfaces between crystallographically and compositionally distinct entities. Finally, by generating time-resolved photoemission sequences of the photo-excited carrier trapping process 10 , 11 , we reveal a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters. Our approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices. Photoemission electron microscopy images of trap states in halide peroskites, spatially correlated with their structural and compositional factors, may help in managing power losses in optoelectronic applications.