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For kesterite copper zinc tin sulfide/selenide (CZTSSe) solar cells to enter the market, in addition to efficiency improvements, the technological capability to produce flexible and large-area modules with homogeneous properties is necessary. Here, we report a greater than 10% efficiency for a cell area of approximately 0.5 cm 2 and a greater than 8% efficiency for a cell area larger than 2 cm 2 of certified flexible CZTSSe solar cells. By designing a thin and multi-layered precursor structure, the formation of defects and defect clusters, particularly tin-related donor defects, is controlled, and the open circuit voltage value is enhanced. Using statistical analysis, we verify that the cell-to-cell and within-cell uniformity characteristics are improved. This study reports the highest efficiency so far for flexible CZTSSe solar cells with small and large areas. These results also present methods for improving the efficiency and enlarging the cell area. Flexibility and homogeneity are preferred properties for the kesterite solar modules to compete with silicon counterparts. Here, Yang et al. achieve these properties by designing a thin and multi-layered precursor structure and at the same time increase the open circuit voltage and device efficiency.

By simple soaking titanium dioxide (TiO2) films in an aqueous Na2S solution, we could prepare surface-modified photoanodes for application to dye-sensitized solar cells (DSSCs). An improvement in both the open-circuit voltage (Voc) and the fill factor (FF) was observed in the DSSC with the 5 min-soaked photoanode, compared with those of the control cell without any modification. The UV–visible absorbance spectra, UPS valence band spectra, and dark current measurements revealed that the Na2S modification led to the formation of anions on the TiO2 surface, and thereby shifted the conduction band edge of TiO2 in the negative (upward) direction, inducing an increase of 29 mV in the Voc. It was also found that the increased FF value in the surface-treated device was attributed to an elevation in the shunt resistance.

In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental compositions were formed without polishing (C00) and with polishing for 20 s (C20) and 60 s (C60). For C60, a specific region near the SCR was excessively Cu‐rich and Zn‐poor compared to C00 and C20. Various charged defects formed where the elemental variation was large. As the main deep acceptor defect energy level (Ea2) near the SCR increased, the efficiency, open‐circuit voltage deficit, and current density degraded, and this phenomenon was especially rapid for large Ea2 values. As the Ea2 near the SCR became deep, the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe2 (CIGSe) solar cells. The large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier lifetime. Consequently, the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells. The defects with deep energy levels near the space‐charge region were proportional to the open‐circuit voltage deficit and inversely proportional to current density more strongly in CZTSSe than in CIGSe. The various defects and defect clusters near the space‐charge regions degraded the properties of the solar cells, especially the kesterite solar cells.

Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have resource distribution and economic advantages. The main cause of their low efficiency is carrier loss resulting from recombination of photo‐generated electron and hole. To overcome this, it is important to understand their electron‐hole behavior characteristics. To determine the carrier separation characteristics, we measured the surface potential and the local current in terms of the absorber depth. The elemental variation in the intragrains (IGs) and at the grain boundaries (GBs) caused a band edge shift and bandgap (Eg) change. At the absorber surface and subsurface, an upward Ec and Ev band bending structure was observed at the GBs, and the carrier separation was improved. At the absorber center, both upward Ec and Ev and downward Ec‐upward Ev band bending structures were observed at the GBs, and the carrier separation was degraded. To improve the carrier separation and suppress carrier recombination, an upward Ec and Ev band bending structure at the GBs is desirable. To minimize carrier recombination loss and improve the solar cell characteristics, it is necessary to form a conduction band minimum (Ec) and valence band maximum (Ev) upward band bending structure over the entire absorber at the grain boundaries and to form a current path in the intragrains.

The efficiency of thin-film chalcogenide solar cells is dependent on their window layer thickness. However, the application of an ultrathin window layer is difficult because of the limited capability of the deposition process. This paper reports the use of atomic layer deposition (ALD) processes for fabrication of thin window layers for Cu(Inx,Ga1−x)Se2 (CIGS) thin-film solar cells, replacing conventional sputtering techniques. We fabricated a viable ultrathin 12 nm window layer on a CdS buffer layer from the uniform conformal coating provided by ALD. CIGS solar cells with an ALD ZnO window layer exhibited superior photovoltaic performances to those of cells with a sputtered intrinsic ZnO (i-ZnO) window layer. The short-circuit current of the former solar cells improved with the reduction in light loss caused by using a thinner ZnO window layer with a wider band gap. Ultrathin uniform A-ZnO window layers also proved more effective than sputtered i-ZnO layers at improving the open-circuit voltage of the CIGS solar cells, because of the additional buffering effect caused by their semiconducting nature. In addition, because of the precise control of the material structure provided by ALD, CIGS solar cells with A-ZnO window layers exhibited a narrow deviation of photovoltaic properties, advantageous for large-scale mass production purposes.

Photo-induced liquid crystal alignment layers were prepared by blending polyimides and photoreactive polymers followed by polarized UV irradiation. Polyimides are selected for the purpose of improving the thermal stability of the molecular orientation of the photoreactive groups. The thermal stability of the LC alignment layer was enhanced regardless of the type of the polyimide while the direction of LC orientation was dependent on the type of polyimide. The photoreactivity of the polyimide governs the LC orientation in the blend alignment layers.

Back cover image: In article number cey2.434, Yang and co‐workers reported vertical plane depth‐resolved surface potential and carrier separation characteristics in flexible Cu2ZnSn(S,Se)4 solar cells. The band energy structure was predicted between the intragrains and the grain boundaries. To minimize carrier recombination, it is necessary to form an upward band bending structure over the entire absorber at the grain boundaries and to form a current path in the intragrains.

By simple soaking titanium dioxide (TiO ) films in an aqueous Na S solution, we could prepare surface-modified photoanodes for application to dye-sensitized solar cells (DSSCs). An improvement in both the open-circuit voltage ( ) and the fill factor ( ) was observed in the DSSC with the 5 min-soaked photoanode, compared with those of the control cell without any modification. The UV-visible absorbance spectra, UPS valence band spectra, and dark current measurements revealed that the Na S modification led to the formation of anions on the TiO surface, and thereby shifted the conduction band edge of TiO in the negative (upward) direction, inducing an increase of 29 mV in the . It was also found that the increased value in the surface-treated device was attributed to an elevation in the shunt resistance.

Nanostructured TiO2 films were prepared by a one-step soaking method, which has many advantages, such as simple fabrication, a short reaction time, and fast growth. We have investigated the growth of TiO2 films by the substrate orientation of the soaking method, which had an effect on the nanostructure of the TiO2 films. The TiO2 films prepared by this method had various structures: particulate-flat structure and sphere-flat structure. To determine the effect of the nanostructure of TiO2 films on the photovoltaic characteristics of solar cells, solar cell devices using the inorganic semiconductor Sb2S3 as a sensitizer were fabricated by chemical bath deposition (CBD). Our solar cell device, using TiO2 film with a sphere-flat structure as a photoelectrode, exhibited JSC, VOC, FF, and η values of 11.82 mA / cm2, 0.49 V, 30.27 %, and 1.74 %, respectively.