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We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black-phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%–100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier.

When a two-dimensional material, adhered onto a compliant substrate, is subjected to compression it can undertake a buckling instability yielding to a periodic rippling. Interestingly, when black phosphorus flakes are compressed along the zig-zag crystal direction the flake buckles forming ripples with a 40% longer period than that obtained when the compression is applied along the armchair direction. This anisotropic buckling stems from the puckered honeycomb crystal structure of black phosphorus and a quantitative analysis of the ripple period allows us to determine the Youngs's modulus of few-layer black phosphorus along the armchair direction (EbP_AC = 35.1 +- 6.3 GPa) and the zig-zag direction (EbP_ZZ = 93.3 +- 21.8 GPa).

We present an easy drop-casting based functionalization of MoS2-based photodetectors that results in an enhancement of the photoresponse of about four orders of magnitude, reaching responsivities up to 100 A/W. The functionalization is technologically trivial, air-stable, fully reversible and reproducible, and opens the door to the combination of 2D-materials with molecular dyes for the development of high performance photodetectors.

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier.

We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.