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In the quest for post-CMOS (complementary metal–oxide–semiconductor) technologies, driven by the need for improved efficiency and performance, topologically protected ferromagnetic ‘whirls’ such as skyrmions 1 – 8 and their anti-particles have shown great promise as solitonic information carriers in racetrack memory-in-logic or neuromorphic devices 1 , 9 – 11 . However, the presence of dipolar fields in ferromagnets, which restricts the formation of ultrasmall topological textures 3 , 6 , 8 , 9 , 12 , and the deleterious skyrmion Hall effect, when skyrmions are driven by spin torques 9 , 10 , 12 , have thus far inhibited their practical implementation. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling, have recently become the subject of intense focus 9 , 13 – 19 , but they have yet to be experimentally demonstrated in natural antiferromagnetic systems. Here we realize a family of topological antiferromagnetic spin textures in α-Fe 2 O 3 —an Earth-abundant oxide insulator—capped with a platinum overlayer. By exploiting a first-order analogue of the Kibble–Zurek mechanism 20 , 21 , we stabilize exotic merons and antimerons (half-skyrmions) 8 and their pairs (bimerons) 16 , 22 , which can be erased by magnetic fields and regenerated by temperature cycling. These structures have characteristic sizes of the order of 100 nanometres and can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways through which further scaling may be achieved. Driven by current-based spin torques from the heavy-metal overlayer, some of these antiferromagnetic textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature 1 , 9 – 11 , 23 . A family of topological antiferromagnetic spin textures is realized at room temperature in α-Fe 2 O 3 , and their reversible and field-free stabilization using a Kibble–Zurek-like temperature cycling is demonstrated.

Metamaterials open up various exotic means to control electromagnetic waves and among them polarization manipulations with metamaterials have attracted intense attention. As of today, static responses of resonators in metamaterials lead to a narrow-band and single-function operation. Extension of the working frequency relies on multilayer metamaterials or different unit cells, which hinder the development of ultra-compact optical systems. In this work, we demonstrate a switchable ultrathin terahertz quarter-wave plate by hybridizing a phase change material, vanadium dioxide (VO 2 ), with a metasurface. Before the phase transition, VO 2 behaves as a semiconductor and the metasurface operates as a quarter-wave plate at 0.468 THz. After the transition to metal phase, the quarter-wave plate operates at 0.502 THz. At the corresponding operating frequencies, the metasurface converts a linearly polarized light into a circularly polarized light. This work reveals the feasibility to realize tunable/active and extremely low-profile polarization manipulation devices in the terahertz regime through the incorporation of such phase-change metasurfaces, enabling novel applications of ultrathin terahertz meta-devices.

Profuse dendritic-synaptic interconnections among neurons in the neocortex embed intricate logic structures enabling sophisticated decision-making that vastly outperforms any artificial electronic analogues 1 – 3 . The physical complexity is far beyond existing circuit fabrication technologies: moreover, the network in a brain is dynamically reconfigurable, which provides flexibility and adaptability to changing environments 4 – 6 . In contrast, state-of-the-art semiconductor logic circuits are based on threshold switches that are hard-wired to perform predefined logic functions. To advance the performance of logic circuits, we are re-imagining fundamental electronic circuit elements by expressing complex logic in nanometre-scale material properties. Here we use voltage-driven conditional logic interconnectivity among five distinct molecular redox states of a metal–organic complex to embed a ‘thicket’ of decision trees (composed of multiple if-then-else conditional statements) having 71 nodes within a single memristor. The resultant current–voltage characteristic of this molecular memristor (a 'memory resistor', a globally passive resistive-switch circuit element that axiomatically complements the set of capacitor, inductor and resistor) exhibits eight recurrent and history-dependent non-volatile switching transitions between two conductance levels in a single sweep cycle. The identity of each molecular redox state was determined with in situ Raman spectroscopy and confirmed by quantum chemical calculations, revealing the electron transport mechanism. Using simple circuits of only these elements, we experimentally demonstrate dynamically reconfigurable, commutative and non-commutative stateful logic in multivariable decision trees that execute in a single time step and can, for example, be applied as local intelligence in edge computing 7 – 9 . Multiple redox transitions in a molecular memristor can be harnessed as ‘decision trees’ to undertake complex and reconfigurable logic operations in a single time step.

Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal–organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm2. Supported by mathematical modelling, our results establish that multiple memristive states can be functionally non-volatile, yet discrete—a combination perceived as theoretically prohibited. Our device could be used as a binary or ternary memristor, a binary memcapacitor or both concomitantly, and unlike the existing ‘continuous state’ memristors, its discrete states are optimal for high-density, ultra-low-energy digital computing.Charge disproportionation in thin molecular films of a metal–organic complex enables the realization of a ternary memristor and binary memcapacitor.

Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is required to miniaturize electronic devices. Direct visualization of stable ferroelectric polarization and its switching behavior in atomically thick films is critical for achieving this goal. Here, ferroelectric order at room temperature in the two-dimensional limit is demonstrated in tetragonal BiFeO 3 ultrathin films. Using aberration-corrected scanning transmission electron microscopy, we directly observed robust out-of-plane spontaneous polarization in one-unit-cell-thick BiFeO 3 films. High-resolution piezoresponse force microscopy measurements show that the polarization is stable and switchable, whereas a tunneling electroresistance effect of up to 370% is achieved in BiFeO 3 films. Based on first-principles calculations and Kelvin probe force microscopy measurements, we explain the mechanism of polarization stabilization by the ionic displacements in oxide electrode and the surface charges. Our results indicate that critical thickness for ferroelectricity in the BiFeO 3 film is virtually absent, making it a promising candidate for high-density nonvolatile memories. High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO 3 thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (∼350 devices), fast switching (≤30 ns), excellent endurance (∼10 12  cycles), stability (>10 6  s) and scalability (down to ∼60 nm 2 ). In situ Raman and ultraviolet–visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories. Organic resistive memories based on a spin-coated layer of a ruthenium complex with azo-aromatic ligands show high endurance, stability and fast switching speed, as well as good device reproducibility.

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe 2 O 3 (haematite) – now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe 2 O 3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe 2 O 3 . One major challenge for antiferromagnetic spintronics is how to control the antiferromagnetic state. Here Jani et al. demonstrate the reversible ionic control of the room-temperature magnetic anisotropy and spin reorientation transition in haematite, via the incorporation and removal of hydrogen.

There are many electronic and magnetic properties exhibited by complex oxides. Electronic phase separation (EPS) is one of those, the presence of which can be linked to exotic behaviours, such as colossal magnetoresistance, metal–insulator transition and high-temperature superconductivity. A variety of new and unusual electronic phases at the interfaces between complex oxides, in particular between two non-magnetic insulators LaAlO 3 and SrTiO 3 , have stimulated the oxide community. However, no EPS has been observed in this system despite a theoretical prediction. Here, we report an EPS state at the LaAlO 3 /SrTiO 3 interface, where the interface charges are separated into regions of a quasi-two-dimensional electron gas, a ferromagnetic phase, which persists above room temperature, and a (superconductor like) diamagnetic/paramagnetic phase below 60 K. The EPS is due to the selective occupancy (in the form of 2D-nanoscopic metallic droplets) of interface sub-bands of the nearly degenerate Ti orbital in the SrTiO 3 . The observation of this EPS demonstrates the electronic and magnetic phenomena that can emerge at the interface between complex oxides mediated by the Ti orbital. Interface effects in complex oxides could have interesting technological applications. Ariando et al. demonstrate electronic phase separation and rich physics at a complex oxide interface between the two non-magnetic insulators LaAlO 3 and SrTiO 3 .

Fall Armyworm (FAW), Spodoptera frugiperda , is a polyphagous pest capable of feeding over 80 plant species and was indigenous to the Western Hemisphere. Within a span of 4 years, FAW has established itself throughout most of the regions in Africa and Asia causing significant losses in maize production. Owing to its revamped distribution range, it would be prudent to analyze the ensuing genetic changes and study the emerging phylogeographic patterns across the world. In this regard, we would like to provide a current snapshot of genetic diversity of FAW in India 2 years after the initial introduction and compare it with the worldwide diversity in order to trace the origins and evolutionary trajectories of FAW in India. We have investigated around 190 FAW samples from different regions in India for strain identity and polymorphism analysis on the basis of partial mitochondrial cytochrome oxidase I (COI) gene sequences. Apart from the ancestral rice and corn strain haplotype, our study demonstrates the presence of 14 more haplotypes unique to India at a haplotype diversity of 0.356. We were also able to record inter-strain hybrid haplotypes of rice and corn strains in India. Regional heterogeneity within Indian populations seems to be quite low representative of extensive migration of FAW within India. Distribution analysis of pairwise differences and rejection of neutrality tests suggest that the FAW population in India might be undergoing expansion. Our data is consistent with the findings suggesting a recent and common origin for invasive FAW populations in Asia and Africa, and does not indicate multiple introductions to India. This study reports the highest genetic diversity for Indian FAW populations to date and will be useful to track the subsequent evolution of FAW in India. The findings would have important ramifications for FAW behavior and composition throughout the world.

The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 [Y. Chen et al., Nano Lett. 11, 3774 (2011); S. W. Lee et al., Nano Lett. 12, 4775 (2012)] have called in question the original polarization catastrophe model [N. Nakagawa et al., Nature Mater. 5, 204 (2006)]. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, we find that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers.