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In situ strain photoluminescence （PL） and Raman spectroscopy have been employed to exploit the evolutions of the electronic band structure and lattice vibrational responses of chemical vapor deposition （CVD）-grown monolayer tungsten disulphide （WS2） under uniaxial tensile strain. Observable broadening and appearance of an extra small feature at the longer-wavelength side shoulder of the PL peak occur under 2.5% strain, which could indicate the direct-indirect bandgap transition and is further confirmed by our density-functional-theory calculations. As the strain increases further, the spectral weight of the indirect transition gradually increases. Over the entire strain range, with the increase of the strain, the light emissions corresponding to each optical transition, such as the direct bandgap transition （K-K） and indirect bandgap transition （F-K, ≥2.5%）, exhibit a monotonous linear redshift. In addition, the binding energy of the indirect transition is found to be larger than that of the direct transition, and the slight lowering of the trion dissociation energy with increasing strain is observed. The strain was used to modulate not only the electronic band structure but also the lattice vibrations. The softening and splitting of the in-plane E＇ mode is observed under uniaxial tensile strain, and polarization-dependent Raman spectroscopy confirms the observed zigzag-oriented edge of WS2 grown by CVD in previous studies. These findings enrich our understanding of the strained states of monolayer transition-metal dichalcogenide （TMD） materials and lay a foundation for developing applications exploiting their strain-dependent optical properties, including the strain detection and light-emission modulation of such emerging two-dimensional TMDs.

The insertion of an insulating layer into a multilayer light-emitting diode (LED) based on quantum dots and produced by depositing the layers from solution increases the performance of the LEDs to levels comparable to those of state-of-the-art organic LEDs produced by vacuum deposition, while retaining the advantages of solution processing. Efficient LEDs made from solution Light-emitting diodes (LEDs) form the basis of many modern display and solid-state lighting technologies. LEDs that can be processed from solution are especially appealing as they offer the potential for low-cost, large-area fabrication on a variety of substrates. Solution-processed diodes are generally less efficient that their vacuum-deposited counterparts, but Xiaogang Peng and colleagues now show how subtle changes in device architecture can be used to enhance the performance of solution-processed quantum-dot LEDs. By inserting an insulating layer into a solution-processed multilayer LED, the authors achieve performance levels comparable to those of state-of-the-art organic LEDs produced by vacuum deposition, while retaining the advantages of solution processing. Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades 1 , 2 . However, the overall performance of solution-processed LEDs 2 , 3 , 4 , 5 —including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions—remains inferior to that of the best vacuum-deposited organic LEDs 6 , 7 , 8 . Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm −2 ), and a long operational lifetime of more than 100,000 hours at 100 cd m −2 , making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs 2 , 3 , 4 , 5 , 6 , 7 , 8 . This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.

The emergence of inorganic–organic hybrid perovskites, a unique class of solution-processable crystalline semiconductors, provides new opportunities for large-area, low-cost and colour-saturated light-emitting diodes (LEDs) ideal for display and solid-state lighting applications1. However, the performance of blue perovskite LEDs (PeLEDs)2–11 is far inferior to that of their near-infrared, red and green counterparts12–19, strongly limiting the practicality of the PeLED technology. Here, we demonstrate blue PeLEDs emitting at 483 nm with colour coordinates of (0.094, 0.184) and operating with a peak external quantum efficiency of up to 9.5% at a luminance of 54 cd m–2. The devices have a T50 lifetime of 250 s for an initial brightness of 100 cd m–2. The efficient blue electroluminescence originates from a structure of quantum-confined perovskite nanoparticles embedded within quasi-two-dimensional phases with higher bandgaps, prepared by an antisolvent processing scheme. Our work paves the way towards high-performance PeLEDs in the blue region.

Development of highly efficient and stable lateral organic circularly polarized light photodetector is a fundamental prerequisite for realization of circularly polarized light integrated applications. However, chiral semiconductors with helical structure are usually found with intrinsically low field-effect mobilities, which becomes a bottleneck for high-performance and multi-wavelength circularly polarized light detection. To address this problem, here we demonstrate a novel strategy to fabricate multi-wavelength circularly polarized light photodetector based on the donor-acceptor heterojunction, where efficient exciton separation enables chiral acceptor layer to provide differentiated concentration of holes to the channel of organic field-effect transistors. Benefitting from the low defect density at the semiconductor/dielectric interface, the photodetectors exhibit excellent stability, enabling current roll-off of about 3–4% over 500 cycles. The photocurrent dissymmetry value and responsivity for circularly polarized light photodetector in air are 0.24 and 0.28 A W −1 , respectively. We further demonstrate circularly polarized light communication based on a real-time circularly polarized light detector by decoding the light signal. As the proof-of-concept, the results hold the promise of large-scale circularly polarized light integrated photonic applications. Here, the authors report a strategy to fabricate multi-wavelength circularly polarized light photodetectors consisting of bilayer donor-acceptor heterojunctions with chiral active layers.

A major efficiency limit for solution-processed perovskite optoelectronic devices, for example light-emitting diodes, is trap-mediated non-radiative losses. Defect passivation using organic molecules has been identified as an attractive approach to tackle this issue. However, implementation of this approach has been hindered by a lack of deep understanding of how the molecular structures influence the effectiveness of passivation. We show that the so far largely ignored hydrogen bonds play a critical role in affecting the passivation. By weakening the hydrogen bonding between the passivating functional moieties and the organic cation featuring in the perovskite, we significantly enhance the interaction with defect sites and minimize non-radiative recombination losses. Consequently, we achieve exceptionally high-performance near-infrared perovskite light-emitting diodes with a record external quantum efficiency of 21.6%. In addition, our passivated perovskite light-emitting diodes maintain a high external quantum efficiency of 20.1% and a wall-plug efficiency of 11.0% at a high current density of 200 mA cm−2, making them more attractive than the most efficient organic and quantum-dot light-emitting diodes at high excitations.Improved understanding of passivation leads to near-infrared perovskite light-emitting diodes with 21.6% external quantum efficiency.

Solution-processed metal halide perovskites have been recognized as one of the most promising semiconductors, with applications in light-emitting diodes (LEDs), solar cells and lasers. Various additives have been widely used in perovskite precursor solutions, aiming to improve the formed perovskite film quality through passivating defects and controlling the crystallinity. The additive’s role of defect passivation has been intensively investigated, while a deep understanding of how additives influence the crystallization process of perovskites is lacking. Here, we reveal a general additive-assisted crystal formation pathway for FAPbI 3 perovskite with vertical orientation, by tracking the chemical interaction in the precursor solution and crystallographic evolution during the film formation process. The resulting understanding motivates us to use a new additive with multi-functional groups, 2-(2-(2-Aminoethoxy)ethoxy)acetic acid, which can facilitate the orientated growth of perovskite and passivate defects, leading to perovskite layer with high crystallinity and low defect density and thereby record-high performance NIR perovskite LEDs (~800 nm emission peak, a peak external quantum efficiency of 22.2% with enhanced stability). Additives have been widely used for passivating defects in perovskite semiconductors, yet the role of additive and their interaction is not clear. Here, the authors reveal an additive-assisted crystal formation in FAPbI 3 perovskite by tracking the chemical interaction in the precursor solution and crystallographic evolution using multi-functional additives.

Efficiency roll-off is a major issue for most types of light-emitting diodes (LEDs), and its origins remain controversial. Here we present investigations of the efficiency roll-off in perovskite LEDs based on two-dimensional layered perovskites. By simultaneously measuring electroluminescence and photoluminescence on a working device, supported by transient photoluminescence decay measurements, we conclude that the efficiency roll-off in perovskite LEDs is mainly due to luminescence quenching which is likely caused by non-radiative Auger recombination. This detrimental effect can be suppressed by increasing the width of quantum wells, which can be easily realized in the layered perovskites by tuning the ratio of large and small organic cations in the precursor solution. This approach leads to the realization of a perovskite LED with a record external quantum efficiency of 12.7%, and the efficiency remains to be high, at approximately 10%, under a high current density of 500 mA cm −2 . Large drop in efficiency at high brightness has been holding back the development of various light-emitting diodes including halide perovskite. Here Zou et al. achieve high quantum efficiency of 10% under a high current density of 500 mA cm −2 in perovskite-based diodes by reducing luminescence quenching.

Perovskite light-emitting diodes have drawn great attention in the fields of displays and lighting, especially for applications requiring high efficiency and high brightness. While three-dimensional perovskite light-emitting diodes hold promise for achieving higher brightness compared to low-dimensional counterparts, efficient blue three-dimensional perovskite light-emitting diodes have remained a challenge due to defect formation during the disordered crystallization of multiple A-cation perovskite. Here we demonstrate an all-site alloy method that enables sequential A-site doping growth of formamidinium and cesium hybrid perovskite. This approach significantly reduces the trap density of the perovskite film by approximately one order of magnitude. Consequently, we achieve efficient and bright blue perovskite light-emitting diode with an external quantum efficiency of 23.3%, a luminous efficacy of 33.4 lm W −1 , and a luminance of approximately 5700 cd m −2 for the emission with a peak at 487 nm. This work provides a strategy for growing high-quality multicomponent perovskite for optoelectronics. Chen et al. report all-site alloying for 3D perovskites where B-site strontium doping retards the crystallisation and induces sequential A-site doping with annealing. The controllable crystallisation enables blue LEDs with peak efficiency of 23.3% at 487 nm and tuneable emission to 463 nm.

Window glazing plays an essential role to modulate indoor light and heat transmission, which is a prospect to save the energy cost in buildings. The latest photovoltachromic technology has been regarded as one of the most ideal solutions, however, to achieve full-frame size (100% active area) and high-contrast ratio (>30% variable in visible wavelength) for smart window applicability is still a challenge. Here we report a photovoltachromic device combining full-transparent perovskite photovoltaic and ion-gel based electrochromic components in a vertical tandem architecture without any intermediated electrode. Most importantly, by accurately adjusting the halide-exchanging period, this photovoltachromic module can realize a high pristine transmittance up to 76%. Moreover, it possesses excellent colour-rendering index to 96, wide contrast ratio (>30%) on average visible transmittance (400-780 nm), and a self-adaptable transmittance adjustment and control indoor brightness and temperature automatically depending on different solar irradiances. Window glazing plays a crucial role in modulating indoor light and heat transmission, which is beneficial for energy saving. Here, Liu et al. report a full-frame and high-contrast smart windows made of perovskite photovoltaic and ion-gel electrochromic components to realise self-adjusting brightness and temperature regulator.

Metal halide perovskites are emerging as promising semiconductors for cost-effective and high-performance light-emitting diodes (LEDs). Previous investigations have focused on the optimisation of the emissive perovskite layer, for example, through quantum confinement to enhance the radiative recombination or through defect passivation to decrease non-radiative recombination. However, an in-depth understanding of how the buried charge transport layers affect the perovskite crystallisation, though of critical importance, is currently missing for perovskite LEDs. Here, we reveal synergistic effect of precursor stoichiometry and interfacial reactions for perovskite LEDs, and establish useful guidelines for rational device optimization. We reveal that efficient deprotonation of the undesirable organic cations by a metal oxide interlayer with a high isoelectric point is critical to promote the transition of intermediate phases to highly emissive perovskite films. Combining our findings with effective defect passivation of the active layer, we achieve high-efficiency perovskite LEDs with a maximum external quantum efficiency of 19.6%. Metal halide perovskite light-emitting diodes (PeLEDs) attract lots of attention but the role of charge transport layers is less known. Here, Yuan et al . explore the effects of precursor stoichiometry and interfacial reactions in the PeLEDs and achieve a high external quantum efficiency of 19.6%.