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Since the advent of topological insulators hosting Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators where the topological states are protected by crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here we show a temperature-driven gap opening in Dirac surface states within the topological crystalline insulator phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between massless and massive topological states on the surface of a topological system. The opening of a Dirac point gap in topologically non-trivial materials is key to potential applications. Here, the authors use photoelectron spectroscopy to study gap formation and carrier mass acquisition in a topological crystalline insulator as a function of composition and temperature.

Topological crystalline insulators are a novel state of matter in which the topological features of the electronic structure have been predicted to originate from crystal symmetries. Now an experimental realization of a topological crystalline insulator is reported, in the form of Pb 1− x Sn x Se. Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection 1 , 2 . In this study we show that the narrow-gap semiconductor Pb 1− x Sn x Se is a TCI for x = 0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.

Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In this study we show that the narrow-gap semiconductor Pb sub(1-x)Sn sub(x)Se is a TCI for x = 0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.

Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In this study we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a TCI for x  =  0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.

A free data-analysis framework for muSR has been developed. musrfit is fully written in C++, is running under GNU/Linux, Mac OS X, as well as Microsoft Windows, and is distributed under the terms of the GNU GPL. It is based on the CERN ROOT framework and is utilizing the Minuit optimization routines for fitting. It consists of a set of programs allowing the user to analyze and visualize the data. The fitting process is controlled by an ascii-input file with an extended syntax. A dedicated text editor is helping the user to create and handle these files in an efficient way, execute the fitting, show the data, get online help, and so on. A versatile tool for the generation of new input files and the extraction of fit parameters is provided as well. musrfit facilitates a plugin mechanism allowing to invoke user-defined functions. Hence, the functionality of the framework can be extended with a minimal amount of overhead for the user. Currently, musrfit can read the following facility raw-data files: PSI-BIN, MDU (PSI), ROOT (LEM/PSI), WKM (outdated ascii format), MUD (TRIUMF), NeXus (ISIS).

Several proposed applications and exotic effects in topological insulators rely on the presence of helical Dirac states at the interface between a topological and a normal insulator. In the present work, we have used low-energy angle-resolved photoelectron spectroscopy to uncover and characterize the interface states of Bi\\(_2\\)Se\\(_3\\) thin films and Bi\\(_2\\)Te\\(_3\\)/Bi\\(_2\\)Se\\(_3\\) heterostuctures grown on Si(111). The results establish that Dirac fermions are indeed present at the topological-normal-insulator boundary and absent at the topological-topological-insulator interface. Moreover, it is demonstrated that band bending present within the topological-insulator films leads to a substantial separation of the interface and surface states in energy. These results pave the way for further studies and the realization of interface-related phenomena in topological-insulator thin-film heterostructures.

Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here, we show for the first time a temperature-driven gap opening in Dirac surface states within the TCI phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between a massless and massive topological state on the surface of a topological system.

The electronic structure of ZnPc, from sub-monolayers to thick films, on bare and iodated Pt(111) is studied by means of X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy (STM). Our results suggest that at low coverage ZnPc lies almost parallel to the Pt(111) substrate, in a non-planar configuration induced by Zn-Pt attraction, leading to an inhomogeneous charge distribution within the molecule and charge transfer to the molecule. ZnPc does not form a complete monolayer on the Pt surface, due to a surface-mediated intermolecular repulsion. At higher coverage ZnPc adopts a tilted geometry, due to a reduced molecule-substrate interaction. Our photoemission results illustrate that ZnPc is practically decoupled from Pt, already from the second layer. Pre-deposition of iodine on Pt hinders the Zn-Pt attraction, leading to a non-distorted first layer ZnPc in contact with Pt(111)-I \\(\\left(\\sqrt{3}\\times\\sqrt{3}\\right)\\) or Pt(111)-I \\(\\left(\\sqrt{7}\\times\\sqrt{7}\\right)\\), and a more homogeneous charge distribution and charge transfer at the interface. On increased ZnPc thickness iodine is dissolved in the organic film where it acts as an electron acceptor dopant.

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition.

Superlattices of the repeated structure La(1.56)Sr(0.44)CuO(4)/La(2)CuO(4) (LSCO-LCO), where none of the constituents is superconducting, show a superconducting transition of T_c \\simeq 25 K. In order to elucidate the nature of the superconducting state we have performed a low-energy muSR study. By applying a magnetic field parallel (Meissner state) and perpendicular (vortex state) to the film planes, we could show that superconductivity is sheet like, resulting in a very anisotropic superconducting state. This result is consistent with a simple charge-transfer model, which takes into account the layered structure and the difference in the chemical potential between LCO and LSCO, as well as Sr interdiffusion. Using a pancake-vortex model we could estimate a strict upper limit of the London penetration depth to 380 nm in these superlattices. The temperature dependence of the muon depolarization rate in field cooling experiments is very similar to what is observed in intercalated BSCCO and suggests that vortex-vortex interaction is dominated by electromagnetic coupling but negligible Josephson interaction.