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The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe 3 GaTe 2 using molecular beam epitaxy. The epitaxial Fe 3 GaTe 2 films exhibit robust ferromagnetism, exemplified by high Curie temperature ( T C  = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K U  = 6.7 × 10 5  J/m 3 at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T C reaching 345 K, benefiting from the strong PMA ( K U  = 1.8×10 5  J/m 3 at 300 K). In comparison to exfoliated Fe 3 GaTe 2 flakes, our epitaxial films with the same thickness show the significant enhancement of T C , which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe 3 GaTe 2 films with T C far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices. While the list of van der Waals magnetic materials has expanded considerably over the last few years, these are still typically limited to low temperatures. Here, Wu et al report wafer scale growth, and robust room temperature ferromagnetism in Fe3GaTe2.

5-methylcytosine (m5C) is a common post-transcriptional modification observed in a variety of RNAs. m5C has been demonstrated to be important in a variety of biological processes, including RNA structural stability and metabolism. Driven by the importance of m5C modification, many projects focused on the m5C sites prediction were reported before. To better understand the upstream and downstream regulation of m5C, we present a bioinformatics framework, m5CRegpred, to predict the substrate of m5C writer NSUN2 and m5C readers YBX1 and ALYREF for the first time. After features comparison, window lengths selection and algorism comparison on the mature mRNA model, our model achieved AUROC scores 0.869, 0.724 and 0.889 for NSUN2, YBX1 and ALYREF, respectively in an independent test. Our work suggests the substrate of m5C regulators can be distinguished and may help the research of m5C regulators in a special condition, such as substrates prediction of hyper- or hypo-expressed m5C regulators in human disease.

Flexible photodetectors with ultra‐broadband sensitivities, fast response, and high responsivity are crucial for wearable applications. Recently, van der Waals (vdW) Weyl semimetals have gained much attention due to their unique electronic band structure, making them an ideal material platform for developing broadband photodetectors from ultraviolet (UV) to the terahertz (THz) regime. However, large‐area synthesis of vdW semimetals on a flexible substrate is still a challenge, limiting their application in flexible devices. In this study, centimeter‐scale type‐II vdW Weyl semimetal, Td‐MoTe2 films, are grown on a flexible mica substrate by molecular beam epitaxy. A self‐powered and flexible photodetector without an antenna demonstrated an outstanding ability to detect electromagnetic radiation from UV to sub‐millimeter (SMM) wave at room temperature, with a fast response time of ≈20 µs, a responsivity of 0.53 mA W−1 (at 2.52 THz), and a noise‐equivalent power (NEP) of 2.65 nW Hz−0.5 (at 2.52 THz). The flexible photodetectors are also used to image shielded items with high resolution at 2.52 THz. These results can pave the way for developing flexible and wearable optoelectronic devices using direct‐grown large‐area vdW semimetals. Td‐MoTe2 is type‐II Weyl semimetal, which have great potential in THz detection via peculiar topology band structure and exotic transport. Td‐MoTe2/mica structure grown by MBE is first reported as a photodetector from THz to SMM regime. Td‐MoTe2/mica detectors show flexible and high‐resolution terahertz imaging, which is suitable for smart wearable devices, contributing to the application of terahertz technology in daily life.

Hepatocellular carcinoma (HCC) is one of the most prevalent cancers worldwide, with a significant association to hepatitis B virus (HBV) infection, which has been shown to drive HCC progression. Sorafenib, a multi‐kinase inhibitor, is the first‐line treatment for advanced HCC. However, recent studies indicate that HBV infection may confer resistance to sorafenib treatment. The small hepatitis B surface antigen (SHBs), the most abundant HBV viral protein, has been implicated in HCC development, yet its role in sorafenib resistance is unclear. This study demonstrates that SHBs promotes sorafenib resistance in HCC cells and xenograft models by inhibiting apoptosis. Upon sorafenib treatment, SHBs expression was found to enhance the RAF1/MEK/ERK signaling pathway, as evidenced by increased phosphorylation of ERK and MEK. Inhibition of ERK activity with U0126 countered SHBs effects on sorafenib‐induced apoptosis, cleaved caspase‐3, and cellular proliferation. Mechanistically, SHBs binds to protein tyrosine phosphatase non‐receptor type 1 (PTPN1), enhancing its phosphorylation, which subsequently dephosphorylates the protein tyrosine phosphatase interacting protein 51 (PTPIP51). This dephosphorylation promotes RAF1 recruitment to the 14–3‐3β complex, leading to activation of the RAF1/MEK/ERK pathway. These findings suggest that SHBs prevents sorafenib‐induced apoptosis in HCC cells by binding to PTPN1 and stimulating the formation of the PTPIP51/14–3‐3β/RAF1 complex, thereby activating the RAF1/MEK/ERK signaling pathway. This mechanism provides insight into HBV‐induced sorafenib resistance in HCC, highlighting SHBs as a potential target for overcoming treatment resistance in HBV‐related HCC. Hepatitis B virus (HBV) infection is a major driver of hepatocellular carcinoma (HCC) and is associated with resistance to sorafenib, the first‐line treatment for advanced HCC. This study demonstrates that the small HBV surface antigen (SHBs) promotes sorafenib resistance by activating the RAF1/MEK/ERK signaling pathway, inhibiting apoptosis in HCC cells and xenografts. Mechanistically, SHBs binds to PTPN1, enhancing its activity to dephosphorylate PTPIP51, thereby facilitating RAF1 recruitment to the 14–3‐3β complex. These findings identify SHBs as a key mediator of HBV‐related sorafenib resistance and a potential therapeutic target.

To test self healing capability of asphalt binders,three asphalt specimens（pure asphalt,modified asphalt and aged asphalt） were prepared.Every specimen was tested by dynamic shear rheometer（DSR）.The temperature sweeps result indicates that both aging and SBS modifying influence the self healing capability of asphalt binder.The fatigue-heal-fatigue test was introduced to study the self healing capability of asphalt in its serving periods.Furthermore,three different periods（0.5 h,1 h,3 h） were set up to study the influence of rest time on fatigue time.It is concluded that longer rest time,less load will delay the appearance of cracks and extend the service life of asphalt binders.

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe GaTe using molecular beam epitaxy. The epitaxial Fe GaTe films exhibit robust ferromagnetism, exemplified by high Curie temperature (T  = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K  = 6.7 × 10 J/m at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T reaching 345 K, benefiting from the strong PMA (K  = 1.8×10 J/m at 300 K). In comparison to exfoliated Fe GaTe flakes, our epitaxial films with the same thickness show the significant enhancement of T , which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe GaTe films with T far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices.

The demonstration of a tunable conductivity for the LaAlO 3 /SrTiO 3 interfaces by field effect drew significant attention to the development of oxide-based electronics. The increase in the gate capacitance of the LaAlO 3 /SrTiO 3 -based field-effect transistor is particularly important for conductivity modulation and the development of logic devices. Here, we demonstrate the annihilation of quantum capacitance and colossal capacitance enhancement (approximately 1000%) in LaAlO 3 /SrTiO 3 heterostructures by DC gate voltage at room temperature, which we attribute to the motion of oxygen vacancies through the thickness of the LaAlO 3 layer. These capacitor devices will provide a platform for the further development and application of metal-oxide-semiconductor transistors. Demonstration of a tunable conductivity of the LaAlO 3 /SrTiO 3 interfaces by field effect drew significant attention to the development oxide-based electronics. Increase in the gate capacitance of LaAlO 3 /SrTiO 3 -based field-effect transistor is particularly important to the conductivity modulation and the development of logic device. Here, we demonstrate that annihilation of quantum capacitance and colossal capacitance enhancement (about 1000%) in the LaAlO 3 /SrTiO 3 heterostructures by DC gate voltage at room temperature, which we attribute to the motion of oxygen vacancies through the LaAlO 3 layer thickness. The capacitor devices would provide a platform for the further development and application of metal-oxide-semiconductor transistor devices. Oxide-based electronics: Current boost to capacitance Shuxiang Wu, Shuwei Li and co-workers from Sun Yat-sen University in China have significantly enhanced capacitance in a heterostructure that features two insulating oxides—lanthanum aluminate oxide (LAO) and strontium titanate oxide (STO). The interface between LAO and STO is known to be conductive under certain conditions, owing to the formation of a high-mobility ‘two-dimensional electron gas’ in which electrons are free to move in two directions. The researchers determined the effect of a direct current bias on a capacitor device comprising the LAO/STO interface. They found that the capacitance undergoes a reversible switching when subjected to voltage pulses with opposite polarities and, at low switching frequencies, is enhanced by approximately 1000% at room temperature. This effect — which holds promise for field-effect devices — may arise from the reversible redistribution of oxygen vacancies throughout the LAO layer.

The demonstration of a tunable conductivity for the LaAlO sub(3)/SrTiO sub(3) interfaces by field effect drew significant attention to the development of oxide-based electronics. The increase in the gate capacitance of the LaAlO sub(3)/SrTiO sub(3)-based field-effect transistor is particularly important for conductivity modulation and the development of logic devices. Here, we demonstrate the annihilation of quantum capacitance and colossal capacitance enhancement (approximately 1000%) in LaAlO sub(3)/SrTiO sub(3) heterostructures by DC gate voltage at room temperature, which we attribute to the motion of oxygen vacancies through the thickness of the LaAlO sub(3) layer. These capacitor devices will provide a platform for the further development and application of metal-oxide-semiconductor transistors.

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.