Explore the vast range of titles available.

The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi 2 Se 3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit. Berry curvature dipole (BCD) leads to the nonlinear Hall effect manifested as a frequency doubling in topological materials. Here, the authors report electric frequency doubling in the absence of BCD and magnetic field on a surface of Bi 2 Se 3 due to skew scattering arising from inherent chirality of the topological surface states.

Ferrimagnets composed of multiple and antiferromagnetically coupled magnetic elements have attracted much attention recently as a material platform for spintronics. They offer the combined advantages of both ferromagnets and antiferromagnets, namely the easy control and detection of their net magnetization by an external field, antiferromagnetic-like dynamics faster than ferromagnetic dynamics and the potential for high-density devices. This Review summarizes recent progress in ferrimagnetic spintronics, with particular attention to the most-promising functionalities of ferrimagnets, which include their spin transport, spin texture dynamics and all-optical switching. Ferrimagnets offer the combined advantages of both ferromagnets and antiferromagnets for spintronics applications. This Review surveys recent progress.

The nonlinear Hall effect (NLHE), the phenomenon in which a transverse voltage can be produced without a magnetic field, provides a potential alternative for rectification or frequency doubling 1 , 2 . However, the low-temperature detection of the NLHE limits its applications 3 , 4 . Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe 4 , which hosts a robust NLHE due to broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperature-induced sign inversion of the NLHE in TaIrTe 4 . Our theoretical calculations suggest that the observed sign inversion is a result of a temperature-induced shift in the chemical potential, indicating a direct correlation of the NLHE with the electronic structure at the Fermi surface. Finally, on the basis of the observed room-temperature NLHE in TaIrTe 4 we demonstrate the wireless radiofrequency (RF) rectification with zero external bias and magnetic field. This work opens a door to realizing room-temperature applications based on the NLHE in Weyl semimetals. Broken inversion symmetry in a type-II Weyl semimetal TaIrTe 4 enables observation of the room-temperature nonlinear Hall effect as well as wireless radiofrequency rectification.

Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi 2 Se 3 /NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of ~1–1.75 in the thin Bi 2 Se 3 films, where the topological surface states are dominant. In addition, we find the current density required for the magnetization switching is extremely low, ~6 × 10 5  A cm –2 , which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3 d ferromagnet using Bi 2 Se 3 may lead to potential innovations in topological insulator-based spintronic applications. The application of spin-orbit torque in topological insulator heterostructures is limited only under low temperature. Here, the authors report room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques.

Néel skyrmions are of high interest due to their potential applications in a variety of spintronic devices, currently accessible in ultrathin heavy metal/ferromagnetic bilayers and multilayers with a strong Dzyaloshinskii–Moriya interaction. Here we report on the direct imaging of chiral spin structures including skyrmions in an exchange-coupled cobalt/palladium multilayer at room temperature with Lorentz transmission electron microscopy, a high-resolution technique previously suggested to exhibit no Néel skyrmion contrast. Phase retrieval methods allow us to map the internal spin structure of the skyrmion core, identifying a 25 nm central region of uniform magnetization followed by a larger region characterized by rotation from in- to out-of-plane. The formation and resolution of the internal spin structure of room temperature skyrmions without a stabilizing out-of-plane field in thick magnetic multilayers opens up a new set of tools and materials to study the physics and device applications associated with chiral ordering and skyrmions. Néel skyrmions are spin textures with a magnetization that rotates from in- to out-of-plane with distance from its centre. Here, the authors show that Lorentz transmission electron microscopy can be used to directly image Néel skyrmions with high resolution in thick exchange-coupled magnetic multilayers.

The growth of artificial intelligence leads to a computational burden in solving non-deterministic polynomial-time (NP)-hard problems. The Ising computer, which aims to solve NP-hard problems faces challenges such as high power consumption and limited scalability. Here, we experimentally present an Ising annealing computer based on 80 superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, which solves a 70-city traveling salesman problem (TSP, 4761-node Ising problem). By taking advantage of the intrinsic randomness of SMTJs, implementing global annealing scheme, and using efficient algorithm, our SMTJ-based Ising annealer outperforms other Ising schemes in terms of power consumption and energy efficiency. Additionally, our approach provides a promising way to solve complex problems with limited hardware resources. Moreover, we propose a cross-bar array architecture for scalable integration using conventional magnetic random-access memories. Our results demonstrate that the SMTJ-based Ising computer with high energy efficiency, speed, and scalability is a strong candidate for future unconventional computing schemes. Ising machines are promising for solving NP-hard problems, but current implementations have power consumption and scalability challenges. Si et al. implement an Ising machine consisting of 80 superparamagnetic tunnel junctions with all-to-all connections and apply it to a large-scale travelling salesman problem.

All-electric magnetization manipulation at low power is a prerequisite for a wide adoption of spintronic devices. Materials such as heavy metals1–3 or topological insulators4,5 provide good charge-to-spin conversion efficiencies. They enable magnetization switching in heterostructures with either metallic ferromagnets or with magnetic insulators. Recent work suggests a pronounced Edelstein effect in Weyl semimetals due to their non-trivial band structure6,7; the Edelstein effect can be one order of magnitude stronger than it is in topological insulators or Rashba systems. Furthermore, the strong intrinsic spin Hall effect from the bulk states in Weyl semimetals can contribute to the spin current generation8. The Td phase of the Weyl semimetal WTe2 (WTe2 hereafter) possesses strong spin–orbit coupling6,9 and non-trivial band structures10 with a large spin polarization protected by time-reversal symmetry in both the surface and bulk states9–11. Atomically flat surfaces, which can be produced with high quality12, facilitate spintronic device applications. Here, we use WTe2 as a spin current source in WTe2/Ni81Fe19 (Py) heterostructures. We report field-free current-induced magnetization switching at room temperature. A charge current density of ~2.96 × 105 A cm−2 suffices to switch the magnetization of the Py layer. With the charge current along the b axis of the WTe2 layer, the thickness-dependent charge-to-spin conversion efficiency reaches 0.51 at 6–7 GHz. At the WTe2/Py interface, a Dzyaloshinskii–Moriya interaction (DMI) with a DMI constant of −1.78 ± 0.06 mJ m−2 induces chiral domain wall tilting. Our study demonstrates the capability of WTe2 to efficiently manipulate magnetization and sheds light on the role of the interface in Weyl semimetal/magnet heterostructures.

Surface states of three-dimensional topological insulators exhibit the phenomenon of spin–momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, but the main technique currently available is spin- and angle-resolved photoemission spectroscopy. Here we reveal a close link between the spin texture and a new kind of magnetoresistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magnetoelectric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi2Se3 single layer, we can map both the in-plane and out-of-plane components of the spin texture (the latter arising from hexagonal warping). Theoretical calculations suggest that the bilinear magnetoelectric resistance originates from conversion of a non-equilibrium spin current into a charge current under application of the external magnetic field.

Skyrmions in existing 2D van der Waals (vdW) materials have primarily been limited to cryogenic temperatures, and the underlying physical mechanism of the Dzyaloshinskii–Moriya interaction (DMI), a crucial ingredient for stabilizing chiral skyrmions, remains inadequately explored. Here, we report the observation of Néel-type skyrmions in a vdW ferromagnet Fe 3− x GaTe 2 above room temperature. Contrary to previous assumptions of centrosymmetry in Fe 3− x GaTe 2 , the atomic-resolution scanning transmission electron microscopy reveals that the off-centered Fe ΙΙ atoms break the spatial inversion symmetry, rendering it a polar metal. First-principles calculations further elucidate that the DMI primarily stems from the Te sublayers through the Fert–Lévy mechanism. Remarkably, the chiral skyrmion lattice in Fe 3− x GaTe 2 can persist up to 330 K at zero magnetic field, demonstrating superior thermal stability compared to other known skyrmion vdW magnets. This work provides valuable insights into skyrmionics and presents promising prospects for 2D material-based skyrmion devices operating beyond room temperature. There are now several van der Waals magnets that have been shown to host skyrmions, however, these are typically hampered by a low Curie temperature, restricting the temperature at which the skyrmions can exist. Here, Zhang, Jiang, Jiang and coauthors find a skyrmion lattice in the van der Waals magnet Fe3 − xGaTe2 above room temperature and demonstrate the critical role of symmetry breaking in crystal lattice in the origin of these skyrmions.

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.