Explore the vast range of titles available.

As the only cold high-energy beam machining technology, abrasive water jet cutting has a lot of unique advantages to process a large variety of materials. The main factor restricting its development and application refers to its high processing cost. Abrasive consumption is considered as one of the main costs. Abrasive recycling is an effective way for reducing the cost. In addition, it is also beneficial to environmental protection. Abrasive suspension water jet (ASJ) is more suitable for abrasive recycling than traditional abrasive water jet (AWJ) because ASJ does not use dry abrasives. Based on the idea of strive for the recycling process simple and effective, the abrasive recycling of ASJ was studied in this work. It is found that the recycled abrasives with only big particle impurity being sieved out still have strong cutting ability. An simplified abrasive recovery scheme of ASJ cutting system has been proved to be feasible. With 30% of recharge in each cycle, the abrasive can be fully utilized and its cutting performance can remain basically the same in every reuse cycle of continuously recycling process. The abrasives between 90 and 180 μm are optimal abrasives for the cutting surface roughness, compared with the larger size abrasives; the smaller size abrasives have more negative influence on the surface roughness, which should be concerned in the recycling process.

The quantum Hall effect can be substantially affected by interfacial coupling between the host two-dimensional electron gases and the substrate, and has been predicted to give rise to exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this interaction remains challenging. Here we demonstrate the observation of an unusual quantum Hall effect, which differs markedly from that of the known picture, in graphene samples in contact with an antiferromagnetic insulator CrOCl equipped with dual gates. Two distinct quantum Hall phases are developed, with the Landau levels in monolayer graphene remaining intact at the conventional phase, but largely distorted for the interfacial-coupling phase. The latter quantum Hall phase is even present close to the absence of a magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field and the magnetic field. This characteristic prevails up to 100 K in a wide effective doping range from 0 to 1013 cm−2.Interfacing graphene with an antiferromagnetic insulator CrOCl enables the observation of strong interfacial coupling in the quantum Hall regime.

Graphene has aroused great attention due to the intriguing properties associated with its low-energy Dirac Hamiltonian. When graphene is coupled with a correlated insulating substrate, electronic states that cannot be revealed in either individual layer may emerge in a synergistic manner. Here, we theoretically study the correlated and topological states in Coulomb-coupled and gate-tunable graphene-insulator heterostructures. By electrostatically aligning the electronic bands, charge carriers transferred between graphene and the insulator can yield a long-wavelength electronic crystal at the interface, exerting a superlattice Coulomb potential on graphene and generating topologically nontrivial subbands. This coupling can further boost electron-electron interaction effects in graphene, leading to a spontaneous bandgap formation at the Dirac point and interaction-enhanced Fermi velocity. Reciprocally, the electronic crystal at the interface is substantially stabilized with the help of cooperative interlayer Coulomb coupling. We propose a number of substrate candidates for graphene to experimentally demonstrate these effects. Here, the authors theoretically predict the formation of synergistic correlated and topological states in Coulomb-coupled and gate-tunable graphene/insulator heterostructures, proposing a number of promising substrate candidates and a possible explanation for recent experimental observations in graphene/CrOCl heterostructures.

The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 10 7 by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron–electron (e–e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling. Here, the authors report evidence of unconventional correlated insulating states in bilayer graphene/CrOCl heterostructures over wide doping ranges and demonstrate their application for the realization of low-temperature logic inverters.

Long-term sea level variations in the northern South China Sea (SCS) are known to significantly impact coastal ecosystems and socio-economic activities. To improve sea level prediction accuracy, four models—harmonic analysis and three artificial neural networks (ANNs), namely genetic algorithm-optimized back propagation (GA-BP), radial basis function (RBF), and long short-term memory (LSTM)—are developed and compared using 52 years of observational data (1960–2004). Key evaluation metrics are presented to demonstrate the models’ effectiveness: for harmonic analysis, the root mean square error (RMSE) is reported as 14.73, the mean absolute error (MAE) is 12.61, the mean bias error (MBE) is 0.0, and the coefficient of determination (R2) is 0.84; for GA-BP, the RMSE is measured as 29.1371, the MAE is 24.9411, the MBE is 5.6809, and the R2 is 0.4003; for the RBF neural network, the RMSE is calculated as 27.1433, the MAE is 22.7533, the MBE is 2.1322, and the R2 is 0.4690; for LSTM, the RMSE is determined as 23.7929, the MAE is 19.7899, the MBE is 1.3700, and the R2 is 0.5872. The key findings include the following: (1) A significant sea level rise trend at 1.4 mm/year is observed in the northern SCS. (2) Harmonic analysis is shown to outperform all ANN models in both accuracy and robustness, with sea level variations effectively characterized by four principal and six secondary tidal constituents. (3) Despite their complexity, ANN models (including LSTM) are found to fail in surpassing the predictive capability of the traditional harmonic method. These results highlight the continued effectiveness of harmonic analysis for long-term sea level forecasting, offering critical insights for coastal hazard mitigation and sustainable development planning.

Surface topography is the intrinsic determinant of the roughness that is a significant evaluation standard for the machining quality of the abrasive suspension jet (ASJ). To achieve quantitative analysis on the surface topography machined by ASJ, this paper measured the roughness and the scratch size of the cutting surface with an ultra-deep three-dimensional microscope. Ti-6Al-4V (TC4), a typical hard machining material widely used in aviation industry, was chosen as the cutting target. From a macroperspective, the cutting surface is divided into four zones from top to bottom including the initial zone, the smooth zone, the transition zone, and the rough zone. With 1.6-μm set as the standard roughness, the length of the initial zones and the smooth zone were analyzed and determined. From a microperspective, there are a large number of particle scratches with micron scale size laid on the cutting surface. The experimental results showed that the length of the scratches in the initial zone was less than the one in the smooth zone, while it was opposite in the scratch depth and width, and that the initial zone is larger than the smooth zone in surface roughness could be explained. The abrasive particle size is the only influent parameters of the scratch size, and small abrasive particles can be used for reducing the roughness in the initial zone and smooth zone. The conclusions can provide theory guidance for abrasive water jet processing titanium alloys precisely.

Imaging flow cytometry (IFC) combines the imaging capabilities of microscopy with the high throughput of flow cytometry, offering a promising solution for high-precision and high-throughput cell analysis in fields such as biomedicine, green energy, and environmental monitoring. However, due to limitations in imaging framerate and real-time data processing, the real-time throughput of existing IFC systems has been restricted to approximately 1000-10,000 events per second (eps), which is insufficient for large-scale cell analysis. In this work, we demonstrate IFC with real-time throughput exceeding 1,000,000 eps by integrating optical time-stretch (OTS) imaging, microfluidic-based cell manipulation, and online image processing. Cells flowing at speeds up to 15 m/s are clearly imaged with a spatial resolution of 780 nm, and images of each individual cell are captured, stored, and analyzed. The capabilities and performance of our system are validated through the identification of malignancies in clinical colorectal samples. This work sets a new record for throughput in imaging flow cytometry, and we believe it has the potential to revolutionize cell analysis by enabling highly efficient, accurate, and intelligent measurement.

Deoxyribose nucleic acid (DNA), a type of soft matter, is often considered a promising building block to fabricate and investigate hybrid heterostructures with exotic functionalities. However, at this stage, investigations on DNA-enabled nanoelectronics have been largely limited to zero-dimensional (0D) and/or one-dimensional (1D) structures. Exploring their potential in higher dimensions, particularly in combination with hard matter solids such as van der Waals (vdW) two-dimensional (2D) materials, has proven challenging. Here, we show that 2D tessellations of DNA origami thin films, with a lateral size over 10 μm, can function as a sufficiently stiff substrate (Young’s modulus of  ~4 GPa). We further demonstrate a two-dimensional soft-hard interface of matter (2D-SHIM), in which vdW layers are coupled to the 2D tessellations of DNA origami. In such 2D-SHIM, the DNA film can then serve as a superlattice due to its sub-100 nm sized pitch of the self-assemblies, which modulates the electronic states of the hybrid system. Our findings open up promising possibilities for manipulating the electronic properties in hard matter using soft matter as a super-structural tuning knob, which may find applications in next generation nanoelectronics. Here, the authors fabricate hybrid van der Waals heterostructures based on 2D tessellations of DNA origami thin films, graphene and boron nitride, showing that the DNA films can induce periodic superlattices at the interface and modulate the electronic properties of the samples.

(1) Background: Traditional dressings can only superficially cover the wound, they have widespread issues with inadequate bacterial isolation and liquid absorption, and it is simple to inflict secondary wound injury when changing dressings. Therefore, it is crucial for wound healing to develop a new kind of antimicrobial colloidal dressing with good antibacterial, hygroscopic, and biocompatible qualities. (2) Methods: Ag-montmorillonite/chitosan (Ag-MMT/CS) colloid, a new type of antibacterial material, was prepared from two eco-friendly materials—namely, montmorillonite and chitosan—as auxiliary materials, wherein these materials were mixed with the natural metal Ag, which is an antibacterial agent. The optimum preparation technology was explored, and Ag-MMT/CS was characterized. Next, Staphylococcus aureus, which is a common skin infection bacterium, was considered as the experimental strain, and the in vitro antibacterial activity and cytocompatibility of the Ag-MMT/CS colloid were investigated through various experiments. Subsequently, a rat skin infection model was established to explore the in vivo antibacterial effect. (3) Results: In vitro studies revealed that the Ag-MMT/CS colloid had a good antibacterial effect on S. aureus, with an inhibition zone diameter of 18 mm and an antibacterial rate of 99.18%. After co-culture with cells for 24 h and 72 h, the cell survival rates were 88% and 94%, respectively. The cells showed normal growth and proliferation, and no evident dead cells were observed under the laser confocal microscope. After applying the colloid to the rat skin infection model, the Ag-MMT/CS treatment group exhibited faster wound healing and better local exudation and absorption in the wound than the control group, suggesting that the Ag-MMT/CS colloid exhibited a better antibacterial effect on the S. aureus. (4) Conclusions: Ag+, chitosan, and MMT present in the Ag-MMT/CS colloid dressing exert synergistic effects, and it has good antibacterial effects, cytocompatibility, and hygroscopicity, indicating that this colloid has the potential to become a next-generation clinical antibacterial dressing.

Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis 1 – 3 . Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures 4 , 5 , as well as hetero-2D layers with different carrier types 6 – 8 , have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe 2 (refs. 9 – 17 ) and MoS 2 (refs. 11 , 18 – 28 )) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS 2 , atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS 2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm 2  V −1  s −1 , on/off ratios reaching 10 6 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates. We develop a method for high-density vertical stacking of active-device multi-layers, implementing memory and logic functions, using unique VIP-FETs where a van der Waals intercalation layer modulates the p- or n-type nature of the FETs.