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4,933,097 result(s) for "You, L"
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كيف تتخطى آلامك وتواصل حياتك ؟
هذا الكتاب يهدف إلى إعادة بناء حياة الفرد بفكر جديد معزز بمشاعر حب النفس وتقديرها والثقة بها. وتهدف \"لويز هاي\" هنا إلى مشاركة القراء في الخبرات والتجارب المختلفة التي اكتسبتها، والتي تركز في الأساس على محاولة تنمية الجانب العقلي للفرد والتحكم فيه للعمل على التخلص من مشاعر الكآبة والحزن والملل التي تسيطر على حياته. إذا اتبعت النصائح والإرشادات التي ذكرتها \"لويز هاي\" في هذا الكتاب، فستلاحظ حدوث تغير جذري في حياتك. اقرأ الكتاب بتمعن وتركيز، واستفد مما فيه من معلومات قيمة تمس أهم جوانب حياتك وتعمل على إصلاح ما ساء منها.
Room-temperature antiferromagnetic memory resistor
The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets. Magnetic memory devices are typically based on ferromagnetic materials. Now, a memory resistor based on the antiferromagnetic alloy FeRh is demonstrated at room temperature.
احترس .. د. مهووس يراك!
\"احترس د. مهووس يراك\" يعشق ريتشارد دريزر مطالعة القصص المصورة ويمضي وقتا طويلا في متحف القصص المصورة الموجود في حيه والأدهي أنه يحلم بأنه بطل خارق يتمتع بقوى غريبة ومدهشة لكن عندما يظهر دكتور مهووس الداهية المجنون في عالم الواقع يجد ريتشارد نفسه في خضم أحداث تشغله عن حياته لو لم يتصرف ريتشارد بسرعة وسيضيع كل شيء ولكن كيف لك أن تناقش مخبولا بالمنطق؟ على ريتشارد أن يجد حلا وبسرعة لأن الدكتور مجنون.
P53-regulated long non-coding RNA TUG1 affects cell proliferation in human non-small cell lung cancer, partly through epigenetically regulating HOXB7 expression
Recently, a novel class of transcripts, long non-coding RNAs (lncRNAs), is being identified at a rapid pace. These RNAs have critical roles in diverse biological processes, including tumorigenesis. Here we report that taurine-upregulated gene 1 ( TUG1 ), a 7.1-kb lncRNA, recruiting and binding to polycomb repressive complex 2 (PRC2), is generally downregulated in non-small cell lung carcinoma (NSCLC) tissues. In a cohort of 192 NSCLC patients, the lower expression of TUG1 was associated with a higher TNM stage and tumor size, as well as poorer overall survival ( P <0.001). Univariate and multivariate analyses revealed that TUG1 expression serves as an independent predictor for overall survival ( P <0.001). Further experiments revealed that TUG1 expression was induced by p53, and luciferase and chromatin immunoprecipitation (ChIP) assays confirmed that TUG1 was a direct transcriptional target of p53. TUG1 knockdown significantly promoted the proliferation in vitro and in vivo . Moreover, the lncRNA-mediated regulation of the expression of HOX genes in tumorigenesis and development has been recently receiving increased attention. Interestingly, inhibition of TUG1 could upregulate homeobox B7 (HOXB7) expression; ChIP assays demonstrated that the promoter of HOXB7 locus was bound by EZH2 (enhancer of zeste homolog 2), a key component of PRC2, and was H3K27 trimethylated. This TUG1-mediated growth regulation is in part due to specific modulation of HOXB7, thus participating in AKT and MAPK pathways. Together, these results suggest that p53-regulated TUG1 is a growth regulator, which acts in part through control of HOXB7. The p53/TUG1/PRC2/HOXB7 interaction might serve as targets for NSCLC diagnosis and therapy.
أيها الوحش .. لن تفزعني !
هذا الكتاب \"أيها الوحش، لن تفزعني\" من سلسلة صرخة الرعب ألفها الكاتب الأمريكي (أر.أل ستاين) تقدم هذه الكتب صورة حية لحياة المراهقين الأمريكين عن طريق عرض ما يتعرضوا له من مغامرات في مدارسهم وبيوتهم واجازاتهم يعتمد الكاتب على اسلوب التشويق واضفى لمسات من الرعب وتميز بقصر الفصول حيث يتألف الفصل الواحد من صفحتين أو ثلاثة.
Electrically reversible cracks in an intermetallic film controlled by an electric field
Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 10 8 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 10 7 cycles under 10-μs pulses, without catastrophic failure of the film. Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applications.
Tunable atomic spin-orbit coupling synthesized with a modulating gradient magnetic field
We report the observation of synthesized spin-orbit coupling (SOC) for ultracold spin-1 87 Rb atoms. Different from earlier experiments where a one dimensional (1D) atomic SOC of pseudo-spin-1/2 is synthesized with Raman laser fields, the scheme we demonstrate employs a gradient magnetic field (GMF) and ground-state atoms, thus is immune to atomic spontaneous emission. The strength of SOC we realize can be tuned by changing the modulation amplitude of the GMF and the effect of the SOC is confirmed through the studies of: 1) the collective dipole oscillation of an atomic condensate in a harmonic trap after the synthesized SOC is abruptly turned on; and 2) the minimum energy state at a finite adiabatically adjusted momentum when SOC strength is slowly ramped up. The condensate coherence is found to remain very good after driven by modulating GMFs. Our scheme presents an alternative means for studying interacting many-body systems with synthesized SOC.
Interface control of bulk ferroelectric polarization
The control of material interfaces at the atomic level has led to novel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we employ a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite underlayers extends the generality of this phenomenon.