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We quantitatively study the Raman and photoluminescence （PL） emission from single-layer molybdenum disulfide （MoS2） on dielectric （SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film） and conducting substrates （Au and few-layer graphene）. We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the Alg Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoSa-based vertical heterostructures and represent the first step in ad hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

The thermal conduction of suspended few-layer hexagonal boron nitride （h-BN） sheets was experimentally investigated using a noncontact micro-Raman spectroscopy method. The first-order temperature coefficients for monolayer （1L）, bilayer （2L） and nine-layer （9L） h-BN sheets were measured to be -（3.41 ± 0.12）× 10-2, -（3.15 ± 0.14） × 10-2 and -（3.78 ±0.16）× 10-2 cm-1.K-1, respectively. The room-temperature thermal conductivity of few-layer h-BN sheets was found to be in the range from 227 to 280 W.m-1-K-1, which is comparable to that of bulk h-BN, indicating their potential use as important components to solve heat dissipation problems in thermal management configurations.

We report thermoelectric transport measurements across a graphene/hexagonal boron nitride （h-BN）/graphene heterostructure device. Using an AC lock-in technique, we are able to separate the thermoelectric contribution to the I-V characteristics of these important device structures. The temperature gradient is measured optically using Raman spectroscopy, which enables us to explore thermoelectric transport produced at material interfaces, across length scales of just 1-2 nm. Based on the observed thermoelectric voltage （AV） and tem- perature gradient （AT）, a Seebeck coefficient of -99.3 μV/K is ascertained for the heterostructure device. The obtained Seebeck coefficient can be useful for understanding the thermoelectric component in the cross-plane I-V behaviors of emerging 2D heterostructure devices. These results provide an approach to probing thermoelectric energy conversion in two-dimensional layered heterostructures.

The two-dimensional atomically thin insulator hexagonal boron nitride （h-BN） constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.

Understanding layer interplay is the key to utilizing layered heterostructures formed by the stacking of different two-dimensional materials for device applications. Boron nitride has been demonstrated to be an ideal substrate on which to build graphene devices with improved mobilities. Here we present studies on the morphology and optical response of annealed few-layer hexagonal boron nitride flakes deposited on a silicon substrate that reveal the formation of linear wrinkles along well-defined crystallographic directions. The wrinkles formed a network of primarily threefold and occasionally fourfold origami-type junctions throughout the sample, and all threefold junctions and wrinkles formed along the armchair crystallographic direction. Furthermore, molecular dynamics simulations yielded, through spontaneous symmetry breaking, wrinkle junction morphologies that are consistent with both the experimental results and the proposed origami-folding model. Our findings indicate that this morphology may be a general feature of several two-dimensional materials under proper stress-strain conditions, resulting in direct consequences in device strain engineering.

Hexagonal boron nitride （h-BN） is often prepared by epitaxial growth on metals, and stability of the formed BN/metal interfaces in gaseous environment is a key issue for physicochemical properties of the BN overlayers. As an illustration here, the structural change of a BN/Ru（0001） interface upon exposure to 02 has been investigated using in situ photoemission electron microscopy （PEEM） and ambient pressure X-ray photoelectron spectroscopy （AP-XPS）. We demonstrate the occurrence of oxygen intercalation of the BN overlayers in 02 atmosphere, which decouples the BN overlayer from the substrate. Comparative studies of oxygen intercalation at BN/Ru（0001） and graphene/Ru（0001） surfaces indicate that the oxygen intercalation of BN overlayers happens more easily than graphene. This finding will be of importance for future applications of BN-based devices and materials under ambient conditions.

Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.

Controlled growth of hexagonal boron nitride （h-BN） with desired properties is essential for its wide range of applications. Here, we systematically carried out the chemical vapor deposition of monolayer h-BN on Cu twin crystals. It was found that h-BN nucleated and grew preferentially and simultaneously on the narrow twin crystal strips present in the Cu substrates. The density functional theory calculations revealed that the introduction of oxygen could effidently ~ne the selectivity. This is because of the reduction in the dehydrogenation barrier of the precursor molecules by the introduction of oxygen. Our findings throw light on the direct growth of functional h-BN nanoribbons on nano-twinned crystal strips and switching of the growth behavior of h-BN films by oxygen.

Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride （h-BN） by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ （γ- 0.82-1.26） temperature dependent mobility were observed in the ZrS2 films.

New materials for hydrogen storage of Li-doped fullerene （C20, C28, C36, C50, C60, C70）-intercalated hexagonal boron nitrogen （h-BN） frameworks were designed by using density functional theory （DFT） calculations. First-principles molecular dynamics （MD） simulations showed that the struc- tures of the Cn-BN （n = 20, 28, 36, 50, 60, and 70） frameworks were stable at room temperature. The interlayer distance of the h-BN layers was expanded to 9.96-13.59 A° by the intercalated fullerenes. The hydrogen storage capacities of these three-dimensional （3D） frameworks were studied using grand canonical Monte Carlo （GCMC） simulations. The GCMC results revealed that at 77 K and 100 bar （10 MPa）, the C50-BN framework exhibited the highest gravimetric hydrogen uptake of 6.86 wt% and volumetric hydrogen uptake of 58.01 g/L. Thus, the hydrogen uptake of the Li-doped Cn-intercalated h-BN frameworks was nearly double that of the non-doped framework at room temperature. Furthermore, the isosteric heats of adsorption were in the range of 10-21 kJ/mol, values that are suitable for adsorbing/desorbing the hydrogen molecules at room temperature. At 193 K （-80 ℃） and 100 bar for the Li-doped C50-BN framework, the gravimetric and volumetric uptakes of H2 reached 3.72 wt% and 30.08 g/L, respectively.