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目的探讨单态氧与氧化物在Photofrin-Diomed 630-PDT中的细胞毒作用机制。方法将人永生化食管上皮细胞系SHEE及其癌变细胞系SHEEC分别随机分成20组,接种24 h贴壁后,更换M199完全培养液为不含血清的30μg/mL的Photofrin-Ⅱ溶液100μL,孵育150 min后,即时干预组迅速更换不同浓度叠氮化钠（NaN3）和超氧化物歧化酶（SOD）的M199液,在15 min内进行光照处理,光照处理后更换M199完全培养液,继续培养24 h;持续干预组光照处理后不再更换M199完全培养液,直至24 h检测,然后应用CCK-8法检测两个细胞系各组的存活率。结果 NaN3对细胞系SHEE和SHEEC的Photofrin-Diomed 630-PDT即时干预随NaN3浓度的增加其拮抗作用也增强;NaN3对细胞系SHEE和SHEEC的Photofrin-Diomed 630-PDT持续干预表现为细胞毒副作用;SOD对细胞系SHEE和SHEEC的Photofrin-Diomed 630-PDT干预无拮抗作用,仅表现细胞毒作用。结论 NaN3对人永生化食管上皮细胞系SHEE和SHEEC的Photofrin-Diomed 630-PDT的即时干预,提示肿瘤PDT细胞损伤的机制可能主要为单态氧的瞬间杀伤作用,而与其他氧化剂关系不明显

We quantitatively study the Raman and photoluminescence （PL） emission from single-layer molybdenum disulfide （MoS2） on dielectric （SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film） and conducting substrates （Au and few-layer graphene）. We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the Alg Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoSa-based vertical heterostructures and represent the first step in ad hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

The properties and applications of boron nitride （BN） nanosheets are com- plementary to those of graphene, with advantages in chemical and thermal stability. Biocompatibility is an important property for future biomedical applications but has not been investigated experimentally. We studied the biocompatibility of BN nanosheets of different sizes and compared it with that of BN nanoparticles in osteoblast-like cells （SaOS2）. Our results showed that the biocompatibility of BN nanomaterials depends on their size, shape, structure, and surface chemical properties. Electron spin resonance measurement revealed that unsaturated B atoms located at the nanosheet edges or on the particle surface are responsible for the cell death.

Transition metal nitrides （TMNs） are of particular interest by virtue of their synergic advantages of superior electrical conductivity, excellent environmental durability and high reaction selectivity, yet it is difficult to achieve flexible design and operation. Herein, mesocrystal nanosheets （MCNSs） of vanadium nitride （VN） are synthesized via a confined-growth route from thermally stable layered vanadium bronze, representing the first two-dimensional （2D） metallic mesocrystal in inorganic compounds. Benefiting from their single-crystalline-like long-range electronic connectivity, VN MCNSs deliver an electrical conductivity of 1.44×10^5 S/m at room temperature, among the highest values observed for 2D nanosheets. Coupled with their unique pseudocapacitance, VN MCNS-based flexible supercapacitors afford a superior volumetric capacitance of 1,937 mF/cm3. Nitride MCNSs should have wide applications in the energy storage and conversion fields because their intrinsic high conductivity is coupled with the reactivity of inorganic lattices.

Semiconductor nanomaterials with photocatalytic activity have potential for many applications. An effective way of promoting photocatalytic activity is depositing noble metal nanoparticles （NPs） on a semiconductor, since the noble metal NPs act as excellent electron acceptors which inhibit the quick recombination of the photoexcited electron-hole pairs and thereby enhance the generation of reactive oxygen species （ROS）. Herein, a highly effective platform, graphitic carbon nitride （g-C3N4） nanosheets with embedded Ag nanopartides （Ag/g-C3N4）, was synthesized by a facile route. Under visible light irradiation, the ROS production of Ag/g-C3N4 nanohybrids was greatly improved compared with pristine g-C3N4 nanosheets, and moreover, the nanohybrids showed enhanced antibacterial efficacy and ability to disperse bacterial biofilms. We demonstrate for the first time that the Ag/g-C3N4 nanohybrids are efficient bactericidal agents under visible light irradiation, and can also provide a new way for biofilm elimination. The enhanced antibacterial properties and biofilm-disrupting ability of Ag/g-C3N4 nanohybrids may offer many biomedical applications.

The thermal conduction of suspended few-layer hexagonal boron nitride （h-BN） sheets was experimentally investigated using a noncontact micro-Raman spectroscopy method. The first-order temperature coefficients for monolayer （1L）, bilayer （2L） and nine-layer （9L） h-BN sheets were measured to be -（3.41 ± 0.12）× 10-2, -（3.15 ± 0.14） × 10-2 and -（3.78 ±0.16）× 10-2 cm-1.K-1, respectively. The room-temperature thermal conductivity of few-layer h-BN sheets was found to be in the range from 227 to 280 W.m-1-K-1, which is comparable to that of bulk h-BN, indicating their potential use as important components to solve heat dissipation problems in thermal management configurations.

Chemical vapor deposition （CVD） synthesis of large-domain hexagonal boron nitride （h-BN） with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to -72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate： the Cu （111） face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.

Ultrathin graphitic carbon nitride nanoplatelets （UGCNPs） are synthesized by a facile manner via an efficient and eco-friendly ball milling approach. The obtained UGCNPs are 2-6 nm in size and 0.35-0.7 nm in thickness, with improved specific surface area over that of bulk graphitic carbon nitride. Photochemical experiments show that the UGCNPs are highly active in visible-light water splitting, with a hydrogen evolution rate of 1,365 μmol·h^-1·g^-1, which is 13.7-fold greater than that of their bulk counterparts. The notable improvement in the hydrogen evolution rate observed with UGCNPs under visible light is due to the synergistic effects derived from the increased specific surface area, reduced thickness, and a negative shift in the conduction band concomitant with the exfoliation of bulk graphitic carbon nitride into UGCNPs. In addition to metal- free visible-light-driven photocatalytic hydrogen production, the UGCNPs find attractive applications in biomedical imaging and optoelectronics because of their superior luminescence characteristics.

Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.

We report thermoelectric transport measurements across a graphene/hexagonal boron nitride （h-BN）/graphene heterostructure device. Using an AC lock-in technique, we are able to separate the thermoelectric contribution to the I-V characteristics of these important device structures. The temperature gradient is measured optically using Raman spectroscopy, which enables us to explore thermoelectric transport produced at material interfaces, across length scales of just 1-2 nm. Based on the observed thermoelectric voltage （AV） and tem- perature gradient （AT）, a Seebeck coefficient of -99.3 μV/K is ascertained for the heterostructure device. The obtained Seebeck coefficient can be useful for understanding the thermoelectric component in the cross-plane I-V behaviors of emerging 2D heterostructure devices. These results provide an approach to probing thermoelectric energy conversion in two-dimensional layered heterostructures.