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In situ strain photoluminescence （PL） and Raman spectroscopy have been employed to exploit the evolutions of the electronic band structure and lattice vibrational responses of chemical vapor deposition （CVD）-grown monolayer tungsten disulphide （WS2） under uniaxial tensile strain. Observable broadening and appearance of an extra small feature at the longer-wavelength side shoulder of the PL peak occur under 2.5% strain, which could indicate the direct-indirect bandgap transition and is further confirmed by our density-functional-theory calculations. As the strain increases further, the spectral weight of the indirect transition gradually increases. Over the entire strain range, with the increase of the strain, the light emissions corresponding to each optical transition, such as the direct bandgap transition （K-K） and indirect bandgap transition （F-K, ≥2.5%）, exhibit a monotonous linear redshift. In addition, the binding energy of the indirect transition is found to be larger than that of the direct transition, and the slight lowering of the trion dissociation energy with increasing strain is observed. The strain was used to modulate not only the electronic band structure but also the lattice vibrations. The softening and splitting of the in-plane E＇ mode is observed under uniaxial tensile strain, and polarization-dependent Raman spectroscopy confirms the observed zigzag-oriented edge of WS2 grown by CVD in previous studies. These findings enrich our understanding of the strained states of monolayer transition-metal dichalcogenide （TMD） materials and lay a foundation for developing applications exploiting their strain-dependent optical properties, including the strain detection and light-emission modulation of such emerging two-dimensional TMDs.

We quantitatively study the Raman and photoluminescence （PL） emission from single-layer molybdenum disulfide （MoS2） on dielectric （SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film） and conducting substrates （Au and few-layer graphene）. We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the Alg Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoSa-based vertical heterostructures and represent the first step in ad hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

Carbon nitrides synthesized by thermal polycondensation of melamine at 700 ~C exhibit photoluminescence （PL） ranging from 400 to 650 nm. This broad PL is attributed to band to band transitions and bandtail transitions of lone pair （LP） states of intra-tri-s-triazine and inter-tri-s-triazine nitrogens. The proposed PL mechanism is further confirmed by diffusion reflectance spectroscopy, as well as time-resolved and temperature-dependent PL. This intense fluorescence is stable at different pH and resistant to UV exposure, suggesting that this inexpensive broadband luminescent material could be significant for white- light-emitting （WLE） applications. Thus, quasi-WLE films and membranes with designed patterns are fabricated by embedding the carbon nitrides into polymethyl methacrylate. Moreover, even broader PL （400 to 740 nm） is acquired in com- posite films composed of carbon nitrides, further suggesting that the carbon nitrides are robust candidates for WLE.

The magnetic transitions in graphene oxide （GO） have been investigated experimentally. Micron-sized GO flakes exhibit dominant diamagnetism accompanied by weak ferromagnetism at room temperature. However, when the lateral dimensions of GO flakes are reduced from micron-size to nano-size, a clear transition from dominant diamagnetism to ferromagnetism is observed. After reducing the GO chemically or thermally, the dominant magnetic properties are not altered markedly except for the gradual enhancement of ferromagnetic components. In contrast, at 2 K, significant paramagnetism is present in both the micron-sized and nano-sized GO sheets. The effects of different functional groups on magnetic transitions in graphene derivatives have been further investigated using on hydroxyl-, carboxyl-, amino- and thiol- functionalized graphene. The results reveal that significant diamagnetism with weak ferromagnetism is present at room temperature in all of these functionalized graphene derivatives and the ability of different functional groups to introduce magnetic moments follows the order -SH 〉 --OH 〉 -COOH, -NH2. Notably, at 5 K, diamagnetism, paramagnetism and ferromagnetism coexist in thiol-, hydroxyl- and carboxyl-functionalized graphene, while amino-graphene exhibits dominant paramagnetism, analogous to the low-temperature magnetism in GO. These results indicate that diamagnetism, paramagnetism and ferromagnetism can coexist in graphene derivatives and magnetic transitions among the three states can be achieved which depend on edge states, vacancies, chemical doping and the attached functional groups. The results obtained may help settle the current controversy about the magnetism of graphene-related materials.

The monolayer arsenic in the puckered honeycomb structure was recently predicted to be a stable two-dimensional layered semiconductor and therefore named arsenene. Unfortunately, it has an indirect band gap, which limits its practical application. Using first-principles calculations, we show that the band gaps of few-layer arsenic have an indirect-direct transition as the number of arsenic layers （n） increases from n=1 to n=2. As n increases from n=2 to infinity, the stacking of the puckered hon- eycomb arsenic layers forms the orthorhombic arsenic crystal （ε-As, arsenolamprite）, which has a similar structure to the black phosphorus and also has a direct band gap. This indirect-direct transition stems from the distinct quantum-confinement effect on the indirect and direct band-edge states with different wavefunction distribution. The strain effect on these electronic states is also studied, showing that the in-plane strains can induce very different shift of the indirect and direct band edges, and thus inducing an indirect-direct band gap transition too. The band gap dependence on strain is non-monotonic, with both positive and negative deformation potentials. Although the gap of arsenene opens between As p-p bands, the spin-orbit interaction de- creases the gap by only 0.02 eV, which is much smaller than the decrease in GaAs with an s-p band gap. The calculated band gaps of arsenene and ε-As using the hybrid functional are 1.4 and 0.4 eV respectively, which are comparable to those of phos- phorene and black phosphorus.

The spectroscopy of hypernuclear low-lying states is very important to understand the structure of hypernuclei and the hyperon impurity effect in atomic nuclei. Several novel phenomena about A hyperon have already been discovered by studying energy spectra and electromagnetic transitions of low-lying states in p-shell hypernuclei. One of them is the shrinkage effect of A hyperon in 6Li,

A forward-facing step （FFS） immersed in a subsonic boundary layer is studied through a high-order flux reconstruction （FR） method to highlight the flow transition induced by the step. The step height is a third of the local boundary-layer thickness. The Reynolds number based on the step height is 720. Inlet disturbances are introduced giving rise to streamwise vortices upstream of the step. It is observed that these small-scale streamwise structures interact with the step and hairpin vortices are quickly developed after the step leading to flow transition in the boundary layer.

Urea-bridged diferrocene derivatives N,N＂-diferrocenylurea（1） and N,N＂-dimethyl-N,N＂-diferrocenylurea（2） were prepared and characterized. Single-crystal X-ray analysis shows that Compound 1 has a trans-trans linear conformation whereas Compound 2 has a trans-cis conformation. Both compounds display two consecutive redox couples with, respectively, E1/2 of ＋0.29 and ＋0.42 V vs. Ag/Ag Cl for 1 and ＋0.31 and ＋0.50 V for 2. Spectroelectrochemical studies show the presence of distinct intervalence charge transfer（IVCT） transitions for the one-electron-oxidized mixed-valent Compound 1＋, with an estimated electronic coupling parameter of 190 cm^-1. By contrast, the one-electron-oxidized Compound 2＋ shows much weaker IVCT transitions.

The interacting boson model-3（IBM-3） has been used to study the energy levels and electromagnetic transitions for the nucleus 34 S.The main components of the wave function,isoscalar and isovector parts in the M1 and E2 transitions for low-lying states have been investigated.According to this study,the theoretical calculations are in agreement with experimental data,and the nucleus 34 S is in transition from U（5） to S U（3）.

Y0.95-xEu0.05VO4：x Bi3＋（x = 0, 0.02, 0.04,0.06, 0.08, and 0.10 mol） six photoluminescence films were deposited on glass substrates by sol–gel spin-coating method. Their morphology and optical property were investigated. The micrographs for the six samples have no change with Bi3→doping. The emission spectra result shows that a dominant red emission peak at 620 nm, which is due to the Eu3＋electric dipole transition of5D0→7F2,is observed under excitation wavelengths 254 nm. Furthermore, with the content of Bi3→increasing from 0 to0.08 mol, the emission intensity of samples strengthens and reaches a maximum at x = 0.08 mol, then decreases with the doping content to 0.10 mol.