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Graphene has attracted the interest of chemists, physicists, and materials scientists due to its extraordinary structural, mechanical, and electronic properties. While pristine graphene is desirable for applications that require a high electrical conductivity, many other applications require modified or functionalized forms of graphene, such as graphene oxide, reduced graphene, or other functionalized forms. Structurally modifying graphene through chemical functionalization reveals the numerous possibilities for tuning its structure; several chemical and physical functionalization methods have been explored to improve the stabilization and modification of graphene. In this review, we report recent progress towards the chemical modification of graphene, including both covalent and noncovalent methods, for use in various applications.

Contemporary nanostructured transparent electrodes for use in solar cells require high transmittance and high conductivity, dictating nanostructures with high aspect ratios. Optical haze is an equally important yet unstudied parameter in transparent electrodes for solar cells that is also determined by the geometry of the nanostructures that compose the electrode. In this work, the effect of the silver nanowire diameter on the optical haze values in the visible spectrum was investigated using films composed of wires with either small diameters （N60 nm） or large diameters （~150 nm）. Finite difference time domain （FDTD） simulations and experimental transmittance data confirm that smaller diameter nanowires form higher performing transparent conducting electrode （TCE） films according to the current figure of merit. While maintaining near constant transmittance and conductivity for each film, however, it was observed experimentally that films composed of silver nanowires with larger diameters have a higher haze factor than films with smaller diameters. This confirms the FDTD simulations of the haze factor for single nanowires with similarly large and small diameters. This is the first record of haze properties for Ag NWs that have been simulated or experimentally measured, and also the first evidence that the current figure of merit for TCEs is insufficient to evaluate their performance in solar cell devices.

The tectono-magmatism in eastern China is a hotspot for the researches, and many hypotheses of that were discussed. There is a middle crust with solid, low velocity and high conductivity in eastern China, which is impossible to form ＂convection magmatic layer＂. The subduction and compression of oceanic plate induced to the lateral pressure for the eastern China lithosphere in the condition of increasing pressure and decreasing temperature, it is also impossible to form an extensively melting magma layer. In South China, the granitic zone migrates from west to east, their evolution cannot be explained by plate subduction. The original magmatic reservoirs are controlled by main faults and spheres, which occurred the tectonic detachment and formed in the process of decreasing pressure and increasing temperature. The magma only originates in very small part of lith- osphere. The tectono-magmatism and tectonic detachment of eastern China lithosphere during the Jurassic and the Cretaceous are concentrate mainly near the intersections between the regional faults and middle crust or the Moho discontinuity, and then magma intrudes or erupts along faults. The tectono-magmatism of Cenozoic originates near the intersections between the regional high-angle normal faults and the bottom of lithosphere. Obviously, the different penetration depth of faults induces a different kind of magmatism.

We report for the first time highly conductive poly（3,4-ethylenedioxythiophene）： poly（4-styrenesulfonate） （PEDOT：PSS）/graphene composites fabricated by in situ polymerization and their applications in a thermoelectric device and a platinum （Pt）-free dye-sensitized solar cell （DSSC） as energy harvesting systems. Graphene was dispersed in a solution of poly（4-styrenesulfonate） （PSS） and polymerization was directly carried out by addition of 3,4-ethylenedioxythiophene （EDOT） monomer to the dispersion. The content of the graphene was varied and optimized to give the highest electrical conductivity. The composite solution was ready to use without any reduction process because reduced graphene oxide was used. The fabricated film had a conductivity of 637 S.cm-1, corresponding to an enhancement of 41%, after the introduction of 3 wt.% graphene without any further complicated reduction processes of graphene being required. The highly conductive composite films were employed in an organic thermoelectric device, and the device showed a power factor of 45.7 μW·m^-1K^-2 which is 93% higher than a device based on pristine PEDOT：PSS. In addition, the highly conductive composite films were used in Pt-free DSSCs, showing an energy conversion efficiency of 5.4%, which is 21% higher than that of a DSSC based on PEDOT：PSS.

Carbon nanotubes (CNTs) possess excellent electrical, thermal and mechanical properties. They are light in weight yet stronger than most of the other materials. They can be made both highly conductive and semi-conductive. They can be made from nano-sized small catalyst particles and extend to tens of millimeters long. Since CNTs emerged as a hot topic in the early 1990s, numerous research efforts have been spent on the study of the various properties of this new material. CNTs have been proposed as alternative materials of potential excellence in a lot of applications such as electronics, chemical sensors, mechanical sensors/actuators and composite materials, etc. This paper reviews the use of CNTs particularly in electronics manufacturing and packaging field. The progresses of three most important applications, including CNT-based thermal interface materials, CNT-based interconnections and CNT-based cooling devices are reviewed. The growth and post-growth processing of CNTs for specific applications are introduced and the tailoring of CNTs properties, i.e., electrical resistivity, thermal conductivity and strength, etc., is discussed with regard to specific application requirement. As the semiconductor industry is still driven by the need of getting smaller and faster, CNTs and the related composite systems as emerging new materials are likely to provide the solution to the future challenges as we make more and more complex electronics devices and systems.

Boron-doped hydrogenated microcrystalline Germanium （lac-Ge：H） films were deposited by hot-wire CVD. H2 diluted G-ell4 and B2H6 were used as precursors and the substrate temperature was kept at 300 ℃. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that the films are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge （220）. The conductivity of the films increases and tends to be saturated with increasing diborane-to-germane ratio RB2H6. All the Hall mobilities of the samples are larger than 3.8 cmZV-1·s-1. A high conductivity of