Explore the vast range of titles available.

Recent developments in chip-based photonic quantum circuits have radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our Review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations, including optical connectivity and operation conditions, and highlights several successful realizations of key physical resources for building a quantum teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid-state platform, which hold great potential for quantum information applications.The Review summarizes the progress of hybrid quantum photonics integration in terms of its important design considerations and fabrication approaches, and highlights some successful realizations of key physical resources for building integrated quantum devices, such as quantum teleporters, quantum repeaters and quantum simulators.

An ideal anti-counterfeiting technique has to be inexpensive, mass-producible, nondestructive, unclonable and convenient for authentication. Although many anti-counterfeiting technologies have been developed, very few of them fulfill all the above requirements. Here we report a non-destructive, inkjet-printable, artificial intelligence (AI)-decodable and unclonable security label. The stochastic pinning points at the three-phase contact line of the ink droplets is crucial for the successful inkjet printing of the unclonable security labels. Upon the solvent evaporation, the three-phase contact lines are pinned around the pinning points, where the quantum dots in the ink droplets deposited on, forming physically unclonable flower-like patterns. By utilizing the RGB emission quantum dots, full-color fluorescence security labels can be produced. A convenient and reliable AI-based authentication strategy is developed, allowing for the fast authentication of the covert, unclonable flower-like dot patterns with different sharpness, brightness, rotations, amplifications and the mixture of these parameters. Anti-counterfeiting technologies should ideally be unclonable, yet simple to fabricate and decode. Here, the authors develop an inkjet-printable and unclonable security label based on random patterning of quantum dot inks, and accompany it with an artificial intelligence decoding mechanism capable of authenticating the patterns.

Topological lasers are immune to imperfections and disorder. They have been recently demonstrated based on many kinds of robust edge states, which are mostly at the microscale. The realization of 2D on-chip topological nanolasers with a small footprint, a low threshold and high energy efficiency has yet to be explored. Here, we report the first experimental demonstration of a topological nanolaser with high performance in a 2D photonic crystal slab. A topological nanocavity is formed utilizing the Wannier-type 0D corner state. Lasing behaviour with a low threshold of approximately 1 µW and a high spontaneous emission coupling factor of 0.25 is observed with quantum dots as the active material. Such performance is much better than that of topological edge lasers and comparable to that of conventional photonic crystal nanolasers. Our experimental demonstration of a low-threshold topological nanolaser will be of great significance to the development of topological nanophotonic circuitry for the manipulation of photons in classical and quantum regimes.Nanophotonics: Creating better performing topological lasersA high-performance topological laser could pave the way for its use in a wide range of nanophotonic applications. Semiconductor lasers are the most common type of laser, but their performance deteriorates if there are any structural defects in the lasing material. Topological lasers allow light to travel around a cavity of any shape without scattering, promising better performing lasers. However, creating a topological laser with a low threshold for lasing and high efficiency has proved challenging. A team of Chinese researchers led by Xiulai Xu from the Chinese Academy of Sciences have now developed a topological laser made from a two-dimensional photonic crystal nanocavity slab with a lasing threshold of about one micro-watt and high spontaneous emission coupling factor of 0.25 and is comparable to the performance of conventional semiconductor lasers.

Perovskite quantum dots have been proven promising for photonic and optoelectronic applications, particularly, as bright and narrow band emitters for display technology. Despite the advantageous properties, the stability issues have to be resolved to unleash the full industrial potential of perovskite quantum dots in display technology.

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Huber et al . demonstrate that droplet-etched gallium arsenide quantum dots can emit highly indistinguishable photon pairs with a high degree of entanglement.

Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons—bandwidth-matched to an atomic quantum-memory—and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an n - i - p -diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum. GaAs quantum dots emitting at the near-red part of the spectrum usually suffers from excess charge-noise. With a careful design of a n-i-p-diode structure hosting GaAs quantum dots, the authors demonstrate ultralow-noise behaviour and high-fidelity spin initialisation close to rubidium wavelengths.

The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si 3 N 4 photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical. Applications of ultra-low-loss photonic circuitry in quantum photonics, in particular including triggered single photon sources, are rare. Here, the authors show how InAs quantum dot single photon sources can be integrated onto wafer-scale, CMOS compatible ultra-low loss silicon nitride photonic circuits.

Controlling and channeling light emissions from unpolarized quantum dots into specific directions with chiral polarization remains a key challenge in modern photonics. Stacked metasurface designs offer a potential compact solution for chirality and directionality engineering. However, experimental observations of directional chiral radiation from resonant metasurfaces with quantum emitters remain obscure. In this paper, we present experimental observations of unidirectional chiral emission from a twisted bi-layer metasurface via multi-dimensional control, including twist angle, interlayer distance, and lateral displacement between the top and bottom layers, as enabled by doublet alignment lithography (DAL). First, maintaining alignment, the metasurface demonstrates a resonant intrinsic optical chirality with near-unity circular dichroism of 0.94 and reflectance difference of 74%, where a high circular dichroism greater than 0.9 persists across a wide range of angles from −11 to 11 degrees. Second, engineered lateral displacement induces a unidirectional chiral resonance, resulting in unidirectional chiral emission from the quantum dots deposited onto the metasurface. Our bi-layer metasurfaces offer a universal compact platform for efficient radiation manipulation over a wide angular range, promising potential applications in miniaturized lasers, grating couplers, and chiral nanoantennas. Simultaneous control of the direction and polarization of quantum emission using photonic nanostructures is a long-standing challenge in photonics. Here, the authors experimentally demonstrate unidirectional chiral emission from a twisted bilayer metasurface with multi-dimensional control.

Micro-light-emitting diodes (μ-LEDs) are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications, such as mobile phones, wearable watches, virtual/augmented reality, micro-projectors and ultrahigh-definition TVs. However, as the LED chip size shrinks to below 20 μm, conventional phosphor colour conversion cannot present sufficient luminance and yield to support high-resolution displays due to the low absorption cross-section. The emergence of quantum dot (QD) materials is expected to fill this gap due to their remarkable photoluminescence, narrow bandwidth emission, colour tuneability, high quantum yield and nanoscale size, providing a powerful full-colour solution for μ-LED displays. Here, we comprehensively review the latest progress concerning the implementation of μ-LEDs and QDs in display technology, including μ-LED design and fabrication, large-scale μ-LED transfer and QD full-colour strategy. Outlooks on QD stability, patterning and deposition and challenges of μ-LED displays are also provided. Finally, we discuss the advanced applications of QD-based μ-LED displays, showing the bright future of this technology.Micro-LEDs: A fine display by quantum dotsMicrometre-sized light-emitting diodes (LEDs) based on quantum dots (QDs) will propel the next generation of display technologies, a review by leading researchers shows. Conventional LED designs, with phosphor coatings that convert light to different colours, are difficult to make smaller than 20 micrometres. Jr-Hau He at City University of Hong Kong and co-workers explain how this problem can be tackled using QDs, tiny particles whose optical properties can be tuned by varying their size, providing brighter and more precise colours. Ultra-high-resolution displays based on phospholuminescent QD-LEDs are now being released to the market thanks to finely-controlled methods for synthesising QDs and depositing them onto films. Further research should focus on the best ways to stabilise and protect QD films within LEDs, and to continue developing electroluminescent QD-LEDs, which could potentially outperform their phospholuminescent cousins.

Realizing of full-color quantum-dot LED display remains a challenge because of the poor stability of the blue quantum-dot and the immature inkjet-printing color patterning technology. Here, we develop a multifunctional tandem LED by stacking a yellow quantum-dot LED with a blue organic LED using an indium–zinc oxide intermediate connecting electrode. Under parallel connection and alternate-current driving, the tandem LED is full-color-tunable, which can emit red, green and blue primary colors as well as arbitrary colors that cover a 63% National Television System Committee color triangle. Under series connection and direct current driving, the tandem LED can emit efficient white light with a high brightness of 107000 cd m −2 and a maximum external quantum efficiency up to 26.02%. The demonstrated hybrid tandem LED, with multi-functionality of full-color-tunability and white light-emission, could find potential applications in both full-color-display and solid-state-lighting. Designing efficient light-emitting diodes with full-color-tunability and white-light-emission remains a challenge. Here, the authors demonstrate a multifunctional hybrid tandem LED by stacking a yellow quantum-dot LED with a blue organic LED using an indium–zinc oxide intermediate connecting electrode.