Explore the vast range of titles available.

To enhance the direct current (DC) dielectric properties of cross-linked polyethylene (XLPE) for high-voltage (HV) cable insulation, the polyethylene molecular chain is modified by grafting bismaleimide ethane (BMIE), which creates carrier deep traps within the polymer material. Compared to the traditional modified molecule maleic anhydride (MAH), BMIE has a significantly higher boiling point than the production temperature of XLPE. Additionally, it does not release bubbles during the production process and, thus, preserves the dielectric properties. It was proved by infrared spectroscopy and a gel content test that BMIE was successfully grafted onto the polyethylene molecular chain and had no effect on the crosslinking degree of the polymer while reducing the amount of crosslinker, thereby reducing the influence of the by-products of the decomposition of dicumene peroxide (DCP) on the electrical resistance of polymers. The analysis of DC breakdown field strength, current density, and space charge distribution at various temperatures demonstrates that grafting BMIE can greatly enhance the dielectric properties of insulation. Polar groups in the BMIE molecule create deep trap energy levels in XLPE-g-BMIE, and these trap energy levels contribute to the formation of a charged layer near the electrode, which is shielded by Coulomb potential. As a result, the charge injection barrier increases. Additionally, the presence of these polar groups reduces the mobility of charge carriers through trap-carrier scattering, effectively suppressing the accumulation of space charge within the material. First-principle calculations also confirm that bound states can be introduced as carrier traps by grafting BMIE onto polyethylene molecules. The agreement between experimental results and simulation calculations indicates that grafting BMIE to enhance the dielectric properties of polyethylene is a new and feasible research direction in the exploitation of materials for HVDC cables.

In this study, the space charge characteristics in the polycyclic aromatic compounds doped cross-linked polyethylene (XLPE) composite were analysed by integration current (Q(t)) method and quantum chemical calculation. Experimentally, the space charge behaviours of XLPE composites modified by the three selected polycyclic aromatic compounds during polarisation and depolarisation process at 25 and 80°C were measured by Q(t) method, respectively. The energy levels and 3D potential distributions of the three polycyclic aromatic compounds were calculated by density functional theory. The experimental and calculation results indicate that the polycyclic aromatic compound C with deep carrier traps and stronger polarity exhibits outstanding ability to reduce space charge injection than the others at both 25 and 80°C. Generally, 4,4′-bis (dimethyl amino) benyil has great potential as the organic additive for DC cable insulation from the view of space charge suppression.

We used capacitance–voltage (C–V), conductance–voltage (G–V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 1013 eV−1∙cm−2 at 1 kHz to 1.2 × 1011 eV−1∙cm−2 at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f2-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f2-noise features moves to the subordinated frequency (~102 Hz) side.

Deep-level transient spectroscopy (DLTS) investigations of energy levels of charge-carrier traps associated with precipitates of metal silicide often show that they behave not like localized monoenergetic traps but as a continuous density of allowed states in the bandgap with fast carrier exchange between these states, so-called band-like behavior. This kind of behavior was ascribed to the dislocation loop bounding the platelet, which in addition exhibits an attractive potential caused by long-range elastic strain. In previous works, the presence of the dislocation-related deformation potential in combination with the external electric field of the Schottky diode was included to obtain a reasonable fit of the proposed model to experimental data. Another well-known particular property of extended defects—the presence of their own strong electric field in their vicinity that is manifested in the logarithmic kinetics of electron capture—was not taken into account. We derive herein a theoretical model that takes into account both the external electric field and the intrinsic electric field of dislocation self-charge as well as its deformation potential, which leads to strong temporal variation of the activation energy during charge-carrier emission. We performed numerical simulations of the DLTS spectra based on such a model for a monoenergetic trap, finding excellent agreement with available experimental data.

Planar perovskite solar cells (PSCs) made entirely via solution processing at low temperatures (<150°C) offer promise for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. However, these PSCs require an electron-selective layer that performs well with similar processing. We report a contact-passivation strategy using chlorine-capped TiO₂ colloidal nanocrystal film that mitigates interfacial recombination and improves interface binding in low-temperature planar solar cells. We fabricated solar cells with certified efficiencies of 20.1 and 19.5% for active areas of 0.049 and 1.1 square centimeters, respectively, achieved via low-temperature solution processing. Solar cells with efficiency greater than 20% retained 90% (97% after dark recovery) of their initial performance after 500 hours of continuous room-temperature operation at their maximum power point under 1-sun illumination (where 1 sun is defined as the standard illumination at AM1.5, or 1 kilowatt/square meter).

Halide perovskites perform remarkably in optoelectronic devices. However, this exceptional performance is striking given that perovskites exhibit deep charge-carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualization of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices, made possible through the development of a new suite of correlative, multimodal microscopy measurements combining quantitative optical spectroscopic techniques and synchrotron nanoprobe measurements. We show that compositional disorder dominates the optoelectronic response over a weaker influence of nanoscale strain variations even of large magnitude. Nanoscale compositional gradients drive carrier funnelling onto local regions associated with low electronic disorder, drawing carrier recombination away from trap clusters associated with electronic disorder and leading to high local photoluminescence quantum efficiency. These measurements reveal a global picture of the competitive nanoscale landscape, which endows enhanced defect tolerance in devices through spatial chemical disorder that outcompetes both electronic and structural disorder. A combination of quantitative optical spectroscopic techniques and synchrotron nanoprobe measurements enable a visualization of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices.

Charge carrier traps are generally highly detrimental for the performance of semiconductor devices. Unlike the situation for inorganic semiconductors, detailed knowledge about the characteristics and causes of traps in organic semiconductors is still very limited. Here, we accurately determine hole and electron trap energies for a wide range of organic semiconductors in thin-film form. We find that electron and hole trap energies follow a similar empirical rule and lie ~0.3–0.4 eV above the highest occupied molecular orbital and below the lowest unoccupied molecular orbital, respectively. Combining experimental and theoretical methods, the origin of the traps is shown to be a dielectric effect of water penetrating nanovoids in the organic semiconductor thin film. We also propose a solvent-annealing method to remove water-related traps from the materials investigated, irrespective of their energy levels. These findings represent a step towards the realization of trap-free organic semiconductor thin films.Hole and electron traps related to the presence of trace water are found in organic semiconductor thin films, at an energy offset of ~0.3–0.4 eV from the highest occupied and lowest unoccupied molecular orbitals, respectively.

Triboelectric nanogenerator (TENG) operates on the principle of utilizing contact electrification and electrostatic induction. However, visualization and standardized quantification of surface charges for triboelectric materials remain challenging. Here, we report a surface charge visualization and standardized quantification method using electrostatic surface potential measured by Kevin probe and the iterative regularization strategy. Moreover, a tuning strategy on surface charge is demonstrated based on the corona discharge with a three-electrode design. The long-term stability and dissipation mechanisms of the injected negative or positive charges demonstrate high dependence on deep carrier traps in triboelectric materials. Typically, we achieved a 70-fold enhancement on the output voltage (~135.7 V) for the identical polytetrafluoroethylene (PTFE) based TENG (neg-PTFE/PTFE or posi-PTFE/PTFE triboelectric pair) with stable surface charge density (5% decay after 140 days). The charged PTFE was demonstrated as a robot e-skins for non-contact perception of object geometrics. This work provides valuable tools for surface charge visualization and quantification, giving a new strategy for a deeper understanding of contact electrification. A surface charge visualization and standardized quantification method and surface charge tuning is achieved for triboelectric materials, delivering essential tools for contact electrification and high-performance triboelectric nanogenerators.

Metal halide perovskites have become a popular material system for fabricating photovoltaics and various optoelectronic devices. However, long-term reliability must be assured. Instabilities are manifested as light-induced ion migration and segregation, which can lead to material degradation. Discordant reports have shown a beneficial role of ion migration under illumination, leading to defect healing. By combining ab initio simulations with photoluminescence measurements under controlled conditions, we demonstrate that photo-instabilities are related to light-induced formation and annihilation of defects acting as carrier trap states. We show that these phenomena coexist and compete. In particular, long-living carrier traps related to halide defects trigger photoinduced material transformations, driving both processes. Defect formation can be controlled by blocking under-coordinated surface sites, which act as a defect reservoir. By use of a passivation strategy we are thus able to stabilize the perovskite layer, leading to improved optoelectronic material quality and enhanced photostability in solar cells.The photo-instability of perovskite solar cells is investigated and controlled by the use of a passivation strategy.

Optoelectronic properties of semiconductors are significantly modified by impurities at trace level. Oxygen, a prevalent impurity in organic semiconductors (OSCs), has long been considered charge-carrier traps, leading to mobility degradation and stability problems. However, this understanding relies on the conventional deoxygenation methods, by which oxygen residues in OSCs are inevitable. It implies that the current understanding is questionable. Here, we develop a non-destructive deoxygenation method (i.e., de-doping) for OSCs by a soft plasma treatment, and thus reveal that trace oxygen significantly pre-empties the donor-like traps in OSCs, which is the origin of p-type characteristics exhibited by the majority of these materials. This insight is completely opposite to the previously reported carrier trapping and can clarify some previously unexplained organic electronics phenomena. Furthermore, the de-doping results in the disappearance of p-type behaviors and significant increase of n-type properties, while re-doping (under light irradiation in O 2 ) can controllably reverse the process. Benefiting from this, the key electronic characteristics (e.g., polarity, conductivity, threshold voltage, and mobility) can be precisely modulated in a nondestructive way, expanding the explorable property space for all known OSC materials. Conventional deoxygenation methods typically result in inevitable trace oxygen residue in organic semiconductors. Here, Huang et al. reports a non-destructive soft-plasma treatment for deoxygenation and that removal of trace oxygen can be used to modulate p-type characteristics.