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Pro .NET memory management : for better code, performance, and scalability
\"Understand .NET memory management internal workings, pitfalls, and techniques in order to effectively avoid a wide range of performance and scalability problems in your software. Despite automatic memory management in .NET, there are many advantages to be found in understanding how .NET memory works and how you can best write software that interacts with it efficiently and effectively. Pro .NET Memory Management is your comprehensive guide to writing better software by understanding and working with memory management in .NET\"-- Publisher's description.
Book
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge₂Sb₂Te₅). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb₂Te₃) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.
Journal Article
Mind games
\"A teen programmer at a school for geniuses must join forces with a boy she can't remember to stop a hacker from deleting their memories\"--Publisher marketing.
BOOK
Superficial layers of the medial entorhinal cortex replay independently of the hippocampus
The hippocampus is thought to initiate systems-wide mnemonic processes through the reactivation of previously acquired spatial and episodic memory traces, which can recruit the entorhinal cortex as a first stage of memory redistribution to other brain areas. Hippocampal reactivation occurs during sharp wave–ripples, in which synchronous network firing encodes sequences of places. We investigated the coordination of this replay by recording assembly activity simultaneously in the CA1 region of the hippocampus and superficial layers of the medial entorhinal cortex. We found that entorhinal cell assemblies can replay trajectories independently of the hippocampus and sharp wave–ripples. This suggests that the hippocampus is not the sole initiator of spatial and episodic memory trace reactivation. Memory systems involved in these processes may include nonhierarchical, parallel components.
Journal Article
Organic flash memory on various flexible substrates for foldable and disposable electronics
With the emergence of wearable or disposable electronics, there grows a demand for a flash memory realizable on various flexible substrates. Nevertheless, it has been challenging to develop a flash memory that simultaneously exhibits a significant level of flexibility and performance. This is mainly due to the scarcity of flexible dielectric materials with insulating properties sufficient for a flash memory, which involves dual dielectric layers, respectively, responsible for tunneling and blocking of charges. Here we report ultra-flexible organic flash memories based on polymer dielectrics prepared by initiated chemical vapor deposition. Using their near-ideal dielectric characteristics, we demonstrate flash memories bendable down to a radius of 300 μm that exhibits a relatively long-projected retention with a programming voltage on par with the present industrial standards. The proposed memory technology is then applied to non-conventional substrates, such as papers, to demonstrate its feasibility in a wide range of applications.
Flexible flash memory is crucial to modern electronics, but its fabrication is challenging in the absence of suitable dielectric materials. Here, Lee
et al
. realize organic memory with retention over 10 years using tunneling and blocking dielectric layers prepared by initiated chemical vapor deposition.
Journal Article
Advanced memory—Materials for a new era of information technology
Material development has played a crucial role in modern civilization and IT. The importance of high-density and high-performance memory in modern computer systems and IT is ever increasing. This trend will be more obvious as computational architectures shift from being processing-centric to memory- (or data-) centric. The need for emerging and new memory technologies with nonvolatility and low power-consuming performance is rapidly increasing, while improvements in current dynamic random-access memory and NAND flash are being pursued. In both new and current memories, material innovation is of central importance. In this issue of MRS Bulletin, recent improvements in these two critical fields are reviewed with a focus on emerging and novel materials for the disruptive memory concept. Recent progress in scanning probe-based memory devices is also described.
Journal Article
An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery
Ternary Content-Addressable Memory (TCAM) is used for storing the flow tables in software-defined networking (SDN)-based OpenFlow switches. However, the TCAM can store only a certain number of flow tables (8000). Moreover, when the switch flow tables need to be updated due to the link failure in the SDN, further updates may be lost due to the flow tables limit of the TCAM space. Hence, to resolve this issue, other memories need to be used in conjunction with TCAM to enhance the memory operations of TCAM. When considering which flash memory technology is to be used in conjunction with TCAM, we need to balance several factors to ensure optimal performance, speed, endurance, reliability, integration complexity, and cost-effectiveness. Hence, it leads to a multi-criteria decision-making problem regarding the selection of other memory technologies such as 3D XPoint, Magnetoresistive RAM, Resistive RAM, and Ferroelectric RAM. In this paper, we use the analytical network process (ANP) method to select the suitable technology in conjunction with TCAM, considering the features of the memory technologies for Software-Defined Internet-of-Things (SD-IoT). We provide a comprehensive numerical model leveraging the ANP to rank the memory technologies regarding their weights. The highest weights identify the most suitable technology for TCAM. We perform simulations to show the effectiveness of the mathematical model utilizing the ANP. The results show that the suggested methodology reduces the recovery delay, improves the packets received ratio (PRR), decreases the jitter, and increases the throughput.
Journal Article
Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications
The AI and IoT era requires software and hardware capable of efficiently processing massive amounts data quickly and at a low cost. However, there are bottlenecks in existing Von Neumann structures, including the difference in the operating speed of current-generation DRAM and Flash memory systems, the large voltage required to erase the charge of nonvolatile memory cells, and the limitations of scaled-down systems. Ferroelectric materials are one exciting means of breaking away from this structure, as Hf-based ferroelectric materials have a low operating voltage, excellent data retention qualities, and show fast switching speed, and can be used as non-volatile memory (NVM) if polarization characteristics are utilized. Moreover, adjusting their conductance enables diverse computing architectures, such as neuromorphic computing with analog characteristics or ‘logic-in-memory’ computing with digital characteristics, through high integration. Several types of ferroelectric memories, including two-terminal-based FTJs, three-terminal-based FeFETs using electric field effect, and FeRAMs using ferroelectric materials as capacitors, are currently being studied. In this review paper, we include these devices, as well as a Fe-diode with high on/off ratio properties, which has a similar structure to the FTJs but operate with the Schottky barrier modulation. After reviewing the operating principles and features of each structure, we conclude with a summary of recent applications that have incorporated them.
Journal Article
Memory Systems - Cache, DRAM, Disk
If memory hierarchy is stopping your microprocessor from performing at the highest level it should be, then this book will show how to resolve that problem. This book provides the reader with everything they need to know about the logical design and operation, physical design and operation, performance characteristics and resulting design trade-offs, and the energy consumption of modern memory hierarchies. You learn how to tackle the challenging optimization problems that result from the side-effects that can appear at any point in the entire hierarchy. As a result you will be able to design and emulate the entire memory hierarchy. As a reference, this book is targeted toward both academics and practicing engineers in microarchitecture and computer system design, embedded system design, and low power design.
eBook