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Magnetic element doped Cd3As2 Dirac semimetal has attracted great attention for revealing the novel quantum phenomena and infrared opto-electronic applications. In this work, the circular photogalvanic effect (CPGE) was investigated at various temperatures for the Ni-doped Cd3As2 films which were grown on GaAs(111)B substrate by molecular beam epitaxy. The CPGE current generation was found to originate from the structural symmetry breaking induced by the lattice strain and magnetic doping in the Ni-doped Cd3As2 films, similar to that in the undoped ones. However, the CPGE current generated in the Ni-doped Cd3As2 films was approximately two orders of magnitude smaller than that in the undoped one under the same experimental conditions and exhibited a complex temperature variation. While the CPGE current in the undoped film showed a general increase with rising temperature. The greatly reduced CPGE current generation efficiency and its complex variation with temperature in the Ni-doped Cd3As2 films was discussed to result from the efficient capture of photo-generated carriers by the deep-level magnetic impurity bands and enhanced momentum relaxation caused by additional strong impurity scattering when magnetic dopants were introduced.

SignificanceThree-dimensional (3D) Dirac semimetals have attracted a lot of advanced research recently on many exotic properties and their association with crystalline and electronic structures under extreme conditions. As one of the fundamental state parameters, high pressure is an effective, clean way to tune lattice as well as electronic states, especially in quantum states, thus their electronic and magnetic properties. In this paper, by combining multiple experimental probes (synchrotron X-ray diffraction, low-temperature transport under magnetic field) and theoretical investigations, we discover the pressure-induced 3D Dirac semimetal to superconductor transition in ZrTe5. As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Using resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement, and theoretical calculations enable a complete understanding of the emerging exotic properties in 3D topological materials under extreme environments.

Anomalous surface states with Fermi arcs are commonly considered to be a fingerprint of Dirac semimetals (DSMs). In contrast to Weyl semimetals, however, Fermi arcs of DSMs are not topologically protected. Using first-principles calculations, we predict that β-cuprous iodide (β-CuI) is a peculiar DSM whose surface states form closed Fermi pockets instead of Fermi arcs. In such a fermiological Dirac semimetal, the deformation mechanism from Fermi arcs to Fermi pockets stems from a large cubic term preserving all crystal symmetries and from the small energy difference between the surface and bulk Dirac points. The cubic term in β-CuI, usually negligible in prototypical DSMs, becomes relevant because of the particular crystal structure. As such, we establish a concrete material example manifesting the lack of topological protection for surface Fermi arcs in DSMs.

Topological semimetals  are well known for the linear energy band dispersion in the bulk state and topologically protected surface state with arc-like Fermi surface. The angle resolved photoemission spectroscopy experiments help confirm the existence of linear Dirac (Weyl) cone and Fermi arc. Meantime, the transport experiments are very important for its intimate relationship with possible applications. In this concise review, recent developments of quantum transport in two typical topological semimetals, namely Dirac and Weyl semimetals, are described. The 3D Dirac semimetal phase is revealed by the Shubnikov-de Haas oscillations. The Weyl Fermions-related chiral anomaly effect is evident by negative magnetoresistance, thermal power suppression, and nonlocal measurements. The Fermi arc mechanism is discussed and several corresponding transport evidences have been described. The point contact-induced superconductivity in Dirac and Weyl semimetal is also introduced. Perspectives about the development of topological semimetals and topological superconductors are provided.

Whereas the discovery of Dirac- and Weyl-type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications is an experimental challenge. In all of the reported materials, linear dispersion survives only up to a few hundred millielectronvolts from the Dirac or Weyl nodes. On the other hand, real materials are subject to uncontrolled doping during preparation and thermal effect near room temperature can hinder the rich physics. In ZrSiS, angle-resolved photoemission spectroscopy measurements have shown an unusually robust linear dispersion (up to ∼2 eV) with multiple nondegenerate Dirac nodes. In this context, we present the magnetotransport study on ZrSiS crystal, which represents a large family of materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology. Along with extremely large and nonsaturating magnetoresistance (MR), ∼1.4 × 10⁵% at 2 K and 9 T, it shows strong anisotropy, depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets. A nontrivial π Berry phase confirms the Dirac fermionic nature for both types of charge carriers. The long-sought relativistic phenomenon of massless Dirac fermions, known as the Adler–Bell–Jackiw chiral anomaly, has also been observed.

SignificanceTopological materials exhibit a nontrivial Berry phase, experimental determination of which heavily relies on a straightforward phase analysis of quantum oscillations. We report the observation of a striking spin-zero effect in quantum oscillations of topological materials. The concomitant phase inversion underlines a largely overlooked phase factor in previous oscillation analysis of topological materials. Moreover, our results indicate that the Berry phase in ZrTe5 remains nontrivial in the presence of a magnetic field and support a field-driven line node phase. One of the characteristics of topological materials is their nontrivial Berry phase. Experimental determination of this phase largely relies on a phase analysis of quantum oscillations. We study the angular dependence of the oscillations in a Dirac material ZrTe5 and observe a striking spin-zero effect (i.e., vanishing oscillations accompanied with a phase inversion). This indicates that the Berry phase in ZrTe5 remains nontrivial for arbitrary field direction, in contrast with previous reports. The Zeeman splitting is found to be proportional to the magnetic field based on the condition for the spin-zero effect in a Dirac band. Moreover, it is suggested that the Dirac band in ZrTe5 is likely transformed into a line node other than Weyl points for the field directions at which the spin zero occurs. The results underline a largely overlooked spin factor when determining the Berry phase from quantum oscillations.

Based on the 3D Dirac semimetals (DSM) supported tilted double elliptical resonators, the tunable propagation properties of quasi-bound in continuum (BIC) resonance have been investigated in the THz regime, including the effects of rotation angles, DSM Fermi level, and the configuration of resonators. The results manifest that by altering the rotation angle of elliptical resonator, an obvious sharp BIC transmission dip is observed with the -factor of more than 60. The DSM Fermi level affects the BIC resonance significantly, a sharp resonant dip is observed if Fermi level is larger than 0.05 eV, resulting from the contributions of reflection and absorption. If Fermi level changes in the range of 0.01–0.15 eV, the amplitude and frequency modulation depths are 92.75 and 44.99%, respectively. Additionally, with the modified configurations of elliptical resonators, inserting a dielectric hole into the elliptical resonator, another transmission dip resonance is excited and indicates a red shift with the increase of the permittivity of the dielectric filling material. The results are very helpful to understand the mechanisms of DSM plasmonic structures and develop novel tunable THz devices, such as modulators, filters, and sensors in the future.

Lorentz-violating type-II Dirac fermion, as a new type of quasiparticles beyond the high-energy physics, has received intense attention recently. However, excellent candidate materials which contain sufficiently more type-II Dirac points near the Fermi level are still in scarcity. Here, we report a family of existing full-Heusler compounds, namely XMg2Ag (X = Pr, Nd, Sm), can serve as excellent Lorentz-violating type-II Dirac semimetals. We find they show several symmetry-protected nodal loops and triply degenerate nodal points (TDNPs) when spin-orbit coupling (SOC) is not considered. These fermions show clear nontrivial surface states. When SOC is included, the TDNPs transform into type-II Dirac points, characterized by Fermi arc surface states. The type-II DPs are protected by the C4v symmetry in the Γ-X path. Comparing with other type-II Dirac semimetals, XMg2Ag compounds have additional advantages including: (i) they contain as much as three pairs of type-II Dirac points; (ii) all the Dirac points locate very close to the Fermi level. These advantages make XMg2Ag compounds are suitable for studying the novel properties of type-II Dirac fermions in future experiments.

Weyl semimetals (WSM) exhibit chiral anomaly in their magnetotransport due to broken conservation laws. Here, we analyze the magnetotransport of WSM in the presence of the time-reversal symmetry-breaking tilt parameter. The analytical expression for the magnetoconductivity is derived in the small tilt limit using the semiclassical Boltzmann equation. We predict a planar Hall current which flows transverse to the electric field and in the plane containing magnetic and electric fields and scales linearly with the tilt parameter. A tilt-induced transverse conductivity is also present in the case where the electric and magnetic fields are parallel to each other, a scenario where the conventional Hall current completely vanishes.

Non-symmorphic materials have recently been predicted to exhibit many different exotic features in their electronic structures. These originate from forced band degeneracies caused by the non-symmorphic symmetry, which not only creates the possibility to realize Dirac semimetals, but also recently resulted in the prediction of novel quasiparticles beyond the usual Dirac, Weyl or Majorana fermions, which can only exist in the solid state. Experimental realization of non-symmorphic materials that have the Fermi level located at the degenerate point is difficult, however, due to the requirement of an odd band filling. In order to investigate the effect of forced band degeneracies on the transport behavior, a material that has such a degeneracy at or close to the Fermi level is desired. Here, we show with angular resolved photoemission experiments supported by density functional calculations, that ZrSiTe hosts several fourfold degenerate Dirac crossings at the X point, resulting from non-symmorphic symmetry. These crossings form a Dirac line node along XR, which is located almost directly at the Fermi level and shows almost no dispersion in energy. ZrSiTe is thus the first real material that allows for transport measurements investigating Dirac fermions that originate from non-symmorphic symmetry.