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458,831 result(s) for "ELECTRONIC ENGINEERING"
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Inverse design of high-dimensional quantum optical circuits in a complex medium
Programmable optical circuits are an important tool in developing quantum technologies such as transceivers for quantum communication and integrated photonic chips for quantum information processing. Maintaining precise control over every individual component becomes challenging at large scales, leading to a reduction in the quality of operations performed. In parallel, minor imperfections in circuit fabrication are amplified in this regime, dramatically inhibiting their performance. Here we use inverse design techniques to embed optical circuits in the higher-dimensional space of a large, ambient mode mixer such as a commercial multimode fibre. This approach allows us to forgo control over each individual circuit element, and retain a high degree of programmability. We use our circuits as quantum gates to manipulate high-dimensional spatial-mode entanglement in up to seven dimensions. Their programmability allows us to turn a multimode fibre into a generalized multioutcome measurement device, allowing us to both transport and certify entanglement within the transmission channel. With the support of numerical simulations, we show that our method is a scalable approach to obtaining high circuit fidelity with a low circuit depth by harnessing the resource of a high-dimensional mode mixer. Light passing through complex media is subject to scattering processes that mix together different photonic modes. This complexity can be harnessed to implement quantum operations.
gm/Id Analysis of vertical nanowire III–V TFETs
Experimental data on analog performance of gate-all-around III-V vertical Tunnel Field-Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 for current range of 9 nA/μm to 100 nA/μm and at a drain voltage of 100 mV. This TFET demonstrates translinearity between transconductance and drain current for over a decade of current, paving way for low power current-mode analog IC design. To explore this design principle, a current conveyor circuit is implemented, which exhibits large-signal voltage gain of 0.89 mV/mV, current gain of 1nA/nA and an operating frequency of 320 kHz. Furthermore, at higher drain bias of 500 mV, the device shows maximum transconductance of 72 μS/μm and maximum drain current of 26 μA/μm. The device, thereby, can be operated as a current mode device at lower bias voltage and as voltage mode device at higher bias voltage.
Mastering Autodesk Inventor 2016 and Autodesk Inventor LT 2016
'Mastering Autodesk Inventor 2016 and Autodesk Inventor LT 2016' is a complete real-world reference and tutorial for those learning this mechanical design software. With straightforward explanations and practical tutorials, this guide brings you up to speed with Inventor in the context of real-world workflows and environments.
Hybrid modelling of water resource recovery facilities: status and opportunities
Mathematical modelling is an indispensable tool to support water resource recovery facility (WRRF) operators and engineers with the ambition of creating a truly circular economy and assuring a sustainable future. Despite the successful application of mechanistic models in the water sector, they show some important limitations and do not fully profit from the increasing digitalisation of systems and processes. Recent advances in data-driven methods have provided options for harnessing the power of Industry 4.0, but they are often limited by the lack of interpretability and extrapolation capabilities. Hybrid modelling (HM) combines these two modelling paradigms and aims to leverage both the rapidly increasing volumes of data collected, as well as the continued pursuit of greater process understanding. Despite the potential of HM in a sector that is undergoing a significant digital and cultural transformation, the application of hybrid models remains vague. This article presents an overview of HM methodologies applied to WRRFs and aims to stimulate the wider adoption and development of HM. We also highlight challenges and research needs for HM design and architecture, good modelling practice, data assurance, and software compatibility. HM is a paradigm for WRRF modelling to transition towards a more resource-efficient, resilient, and sustainable future.
Cost analysis of electronic systems
This text provides an introduction to the cost modeling for electronic systems that is suitable for advanced undergraduate and graduate students in electrical, mechanical and industrial engineering, and professionals involved with electronics technology and development and management.
Controlling the broadband enhanced light chirality with L-shaped dielectric metamaterials
The inherently weak chiroptical responses of natural materials limit their usage for controlling and enhancing chiral light-matter interactions. Recently, several nanostructures with subwavelength scale dimensions were demonstrated, mainly due to the advent of nanofabrication technologies, as a potential alternative to efficiently enhance chirality. However, the intrinsic lossy nature of metals and the inherent narrowband response of dielectric planar thin films or metasurface structures pose severe limitations toward the practical realization of broadband and tailorable chiral systems. Here, we tackle these problems by designing all-dielectric silicon-based L-shaped optical metamaterials based on tilted nanopillars that exhibit broadband and enhanced chiroptical response in transmission operation. We use an emerging bottom-up fabrication approach, named glancing angle deposition, to assemble these dielectric metamaterials on a wafer scale. The reported strong chirality and optical anisotropic properties are controllable in terms of both amplitude and operating frequency by simply varying the shape and dimensions of the nanopillars. The presented nanostructures can be used in a plethora of emerging nanophotonic applications, such as chiral sensors, polarization filters, and spin-locked nanowaveguides. L-shaped silicon metamaterials are realized exhibiting broadband and enhanced chirality. The current work sets new benchmarks in the assembly of ultrathin dielectric chiral metamaterials that can efficiently control chiral light-matter interactions.
Learn Autodesk Inventor 2018 basics : 3D modeling, 2D graphics, and assembly design
\"Get started with the basics of part modeling, assembly modeling, presentations, and drawings in this step-by-step tutorial on Autodesk Inventor fundamentals. Next, this book teaches you some intermediate-level topics such as additional part modeling tools, sheet metal modeling, top-down assembly features, assembly joints, and dimension and annotations. Engaging explanations, practical examples, and step-by-step instructions make this tutorial book complete. Once you have read Learn Autodesk Inventor 2018 Basics you will be able to use Autodesk Inventor for 3D modeling, 2D drawings, finite element analysis, mold design, and other purposes, just like a design professional. You will gain all the basic information and essential skills you need to work in Autodesk Inventor immediately. You will: Carry out virtual 3D modeling for your next 3D printing projects Design molds for 3D printing and other projects Generate 2D drawings Apply basic finite element analysis for figuring stress, tension, and optimized dimensions for your 3D printing projects\"--Page [4] of cover.
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits. Increasing functional density is desirable for future scaling of electronics. Here, the authors use a nanowire ferroelectric tunnel field-effect transistor to achieve reconfigurable signal modulations for low-power and high-density analogue circuits.