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Trapped space charges in epoxy composite distort the electric field, which will induce the failure of the insulation system, and nano graphene oxide may inhibit the curing behavior of epoxy resin matrix. This paper analyzes how the two interfaces affect the electron traps of epoxy resin/graphene oxide systems with different nanofiller contents. The electron affinity energy of epoxy resin matrix and nano filler molecules in the epoxy resin/graphene oxide system is calculated based on quantum chemistry. It is found that nano graphene oxide has a strong electron affinity energy and is easier to capture electrons. Then the influence of the interface formed by the epoxy resin matrix and the nano graphene oxide on the electron transfer ability is calculated. The epoxy resin matrix contains the electron transfer ability of interfaces formed by nano graphene oxide and the molecular chain is different from that of unreacted molecules. The results can provide a reference for the modification of epoxy resin/graphene oxide nanocomposites.

The versatility of the arrangement of C atoms with the formation of different allotropes and phases has led to the discovery of several new structures with unique properties. Carbon nanomaterials are currently very attractive nanomaterials due to their unique physical, chemical, and biological properties. One of these is the development of superconductivity, for example, in graphite intercalated superconductors, single-walled carbon nanotubes, B-doped diamond, etc. Not only various forms of carbon materials but also carbon-related materials have aroused extraordinary theoretical and experimental interest. Hybrid carbon materials are good candidates for high current densities at low applied electric fields due to their negative electron affinity. The right combination of two different nanostructures, CNF or carbon nanotubes and nanoparticles, has led to some very interesting sensors with applications in electrochemical biosensors, biomolecules, and pharmaceutical compounds. Carbon materials have a number of unique properties. In order to increase their potential application and applicability in different industries and under different conditions, they are often combined with other types of material (most often polymers or metals). The resulting composite materials have significantly improved properties.

Electrostatic capacitors, with the advantages of high-power density, fast charging–discharging, and outstanding cyclic stability, have become important energy storage devices for modern power electronics. However, the insulation performance of the dielectrics in capacitors will significantly deteriorate under the conditions of high temperatures and electric fields, resulting in limited capacitive performance. In this paper, we report a method to improve the high-temperature energy storage performance of a polymer dielectric for capacitors by incorporating an extremely low loading of 0.5 wt% carbon quantum dots (CQDs) into a fluorene polyester (FPE) polymer. CQDs possess a high electron affinity energy, enabling them to capture migrating carriers and exhibit a unique Coulomb-blocking effect to scatter electrons, thereby restricting electron migration. As a result, the breakdown strength and energy storage properties of the CQD/FPE nanocomposites are significantly enhanced. For instance, the energy density of 0.5 wt% CQD/FPE nanocomposites at room temperature, with an efficiency (η) exceeding 90%, reached 9.6 J/cm3. At the discharge energy density of 0.5 wt%, the CQD/FPE nanocomposites remained at 4.53 J/cm3 with an efficiency (η) exceeding 90% at 150 °C, which surpasses lots of reported results.

This paper deals with a study of H−/D− negative ion surface production on diamond in low pressure H2/D2 plasmas. A sample placed in the plasma is negatively biased with respect to plasma potential. Upon positive ion impacts on the sample, some negative ions are formed and detected according to their mass and energy by a mass spectrometer placed in front of the sample. The experimental methods developed to study negative ion surface production and obtain negative ion energy and angle distribution functions are first presented. Different diamond materials ranging from nanocrystalline to single crystal layers, either doped with boron or intrinsic, are then investigated and compared with graphite. The negative ion yields obtained are presented as a function of different experimental parameters such as the exposure time, the sample bias which determines the positive ion impact energy and the sample surface temperature. It is concluded from these experiments that the electronic properties of diamond materials, among them the negative electron affinity, seem to be favourable for negative-ion surface production. However, the negative ion yield decreases with the plasma induced defect density.

Examples of the so-called noncovalent structures of anions are reviewed. Their geometry differs significantly from the geometry of the original molecules; in particular, the lengths of carbon–halogen bonds are ∼2.7–3 Å, and the halogen atom itself can circle the hydrocarbon skeleton of the anion (the so-called roaming). Such noncovalent structures can have a significantly higher electron affinity than the original molecules.

The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

GaAs-based photocathodes are the state-of-the-art in the production of highly spin-polarized electron beams for accelerator and microscopy applications. While various novel structures of GaAs have been shown to increase the degree of polarization and quantum efficiency, all GaAs-based photocathodes require activation to negative electron affinity (NEA) to operate at the photon energies where the highest spin polarization is achieved. In this work, we report on NEA activation of bulk GaAs performed using Sb-Cs-O. We show this activation layer to be more robust with respect to traditional Cs and O layer in terms of charge extraction lifetime. This new activation layer is shown to improve the dark lifetime up to one order of magnitude and the charge extraction lifetime up to a factor of about 60, when compared with the traditional Cs-O activating layer. Trade-offs with other relevant parameters like quantum efficiency and electron spin polarization are also discussed.

Charge trap in amorphous perfluoro-polymer electret is studied, focusing on electron trap site and trap energy. Low-energy inverse photoelectron spectroscopy is adopted to measure solid-state electron affinity (EA) of cyclic transparent optical polymer (CYTOP). EA of CYTOP CTL-S is discovered by compensating the unwanted charge-up effect. Negatively-charged electret materials (polyethylene, ethylene-tetra-fluoro-ethylene, poly-tetra-fluoro-ethylene, and CYTOP) are analyzed by quantum mechanical calculation. Density functional theory with long-range correction is adopted to analyze orbital energies of single molecular systems. Intramolecular distribution of trapped electron and EA are investigated. Calculated electron affinities of CYTOP polymers with different end group are qualitatively in accordance with trapped charge stability measured with thermal stimulated discharge, signifying that electron affinities obtained with the present simulation can be used as an index of amorphous polymer electret.

Negative Electron Affinity (NEA) GaAs cathode is an unique device which can generate a highly polarized electron beam with circularly polarized light. The NEA surface is conventionally made by Cs and O/NF3 adsorption on the cleaned p-doped GaAs crystal, but the robustness of the cathode is very limited, so that the electron emission is easily lost by residual gas adsorption, ion back-bombardment, etc. To improve the cathode robustness, NEA activation with a stable thin-film on GaAs surface according to Hetero junction hypothesis has been proposed by the author. An experiment of the NEA activation with CsKTe thin film was carried out at Hiroshima University and a significant electron emission with 1.43 eV photon was observed which strongly suggested NEA activation. The cathode showed 16 to 20 times improvement of lifetime comparing to GaAs activated with Cs and O.

Three small molecules bearing 11,11,12,12-tetracyano-9,10-anthraquinodimethane (TCAQ) units were successfully prepared by a Knoevenagel condensation reaction. Their chemical structures were confirmed by Fourier transform infrared spectrometry and nuclear magnetic resonance (NMR) spectroscopy. They had good solubility, and their optical properties were studied by utilizing ultraviolet–visible absorption spectra in chloroform (CHCl3) solution and thin films. The two conjugated small molecules that connect the donor unit to the acceptor unit with a double bond exhibited a broad and strong absorption band ranging from 200 to 800 nm; their optical band gaps were calculated to be 1.6 eV, suggesting their good coverage of the solar spectrum. Cyclic voltammetry proved that these compounds possess a high electron affinity of ~ 4.0 eV. The results of the photoluminescence quenching experiment reveal efficient electron transfer from poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) to the target small molecules. In conclusion, the properties of these molecules make them potential n-type small molecule organic solar cell materials.