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The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co.sub.50Fe.sub.50).sub.x(LiNbO.sub.3).sub.100-x/s-LiNbO.sub.3/Cu/sitall, Cu/(Co.sub.50Fe.sub.50).sub.x(LiNbO.sub.3).sub.100-x/d-LiNbO.sub.3/Cu/sitall and Cu/(Co.sub.40Fe.sub.40B.sub.20).sub.x(SiO.sub.2).sub.100-x/d LiNbO.sub.3/Cu/sitall at x < 13 was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a \"reversible\" type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co.sub.40Fe.sub.40B.sub.20).sub.x(LiNbO.sub.3).sub.100-x/s-LiNbO.sub.3/Cu/sitall, Cr/Cu/Cr/(Co.sub.40Fe.sub.40B.sub.20).sub.x(LiNbO.sub.3).sub.100-x/s-LiNbO.sub.3/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co.sub.50Fe.sub.50).sub.x(LiNbO.sub.3).sub.100-x/s-LiNbO.sub.3/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.

The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO[sub.2] interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2P[sub.r] value of 74 µC/cm[sup.2]), it exhibited a reduced leakage current (×1/100) and higher breakdown field. The MFIM showed a stable change in 2P[sub.r] from room temperature to 200 °C and an enhanced endurance of ~10[sup.4] cycles at 200 °C; moreover, the leakage current was less degraded after the cycling tests. Thus, the ferroelectric AlScN with a thin HfO[sub.2] interlayer can enhance the reliability of ferroelectric switching.

This research article aims to improve the specific capacitance of DC-etched Al foil for Al electrolytic capacitors by forming an Al[sub.2]O[sub.3]-TiO[sub.2] composite anodic oxide film. DC-etched Al foils for aluminum electrolytic capacitors were immersed in a TiO[sub.2] precursor sol, followed by calcination and anodizing to manufacture a TiO[sub.2]-Al[sub.2]O[sub.3] composite anodic oxide film. TiO[sub.2] precursor sol–gel particles after calcination were analyzed by XRD. During anodization, the anode potential with time was measured by a digital meter. A scanning electron microscope, electrochemical impedance measurements, and a general digital LCR meter were adopted to explore the microstructure and property of the anodic oxide films. The specific capacitance for the TiO[sub.2]-Al[sub.2]O[sub.3] composite anodic oxide film and a pure Al anodic one is 3.013 μF/cm[sup.2] and 2.435 μF/cm[sup.2] at C[sub.60V], respectively. The thickness is 87.26 nm for the former and 177.65 nm for the latter. The results show that the TiO[sub.2]-Al[sub.2]O[sub.3] composite anodic oxide film is about 51% thinner than the single Al anodic film, accounting for a large improvement in specific capacitance. The formation efficiency of the pretreated sample is much higher than that of the blank sample, owing to the pre-deposited TiO[sub.2] layer and thermal Al oxide layer. However, the composite anodic oxide film’s specific resistance was reduced and its dielectric loss was also aggravated, resulting from the doping-introduced structural defects.

The broad-band reflection spectra of YB.sub.6 and YbB.sub.6 hexaborides with Jahn-Teller instability of the boron cage have been measured at room temperature. An optical conductivity analysis has revealed, along with the Drude electronic components, heavily overdamped collective modes, which are notable in YB.sub.6 for high dielectric contributions, [DELTA][epsilon] = 2000-5700. The fraction of nonequilibrium charge carriers in YB.sub.6, which is at the boundary of structural instability in the hexaboride family, reaches 85-90%, whereas this fraction in doped YbB.sub.6 semiconductor is not higher than 25%. It has been shown that unlike the predictions of the topological Kondo insulator model, the surface \"metallization\" in Yb.sup.2+B.sub.6 crystals can be explained by additional doping of a surface layer with Yb.sup.3+ ions.

In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al[sub.0.7]Sc[sub.0.3]N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm[sup.2] and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of <2%. Additionally, the devices demonstrate stable multistate memory characteristics with a dedicated operation scheme. The back-end-of-line (BEOL)-compatible fabrication process, along with all these device performances, shows the potential of AlScN-based capacitors for the implementation of the high-density selector-free memory array.

Ceramic capacitors are receiving increasing interest because of their applications in pulsed-power devices. The perovskite oxide Bi.sub.0.5Na.sub.0.5TiO.sub.3 (BNT)-based ferroelectric ceramics are regarded as prospective lead-free candidate for dielectric capacitors because of the high polarization and outstanding relaxor behaviour. Herein, the relaxor ferroelectric (0.7-x)Bi.sub.0.5Na.sub.0.5TiO.sub.3-0.3SrTiO.sub.3-xCa.sub.0.7Sm.sub.0.2TiO.sub.3 ceramics synthesized through solid-state route and exhibited pseudocubic perovskite structure and strong relaxor behaviour. With increasing Ca.sub.0.7Sm.sub.0.2TiO.sub.3 content, the moderate permittivity and reduced grain size contributed to the monotonically increased electric breakdown strength. Among prepared samples, the x = 0.2 ceramic displayed slimmer polarization-electric field curves with a remarkable recoverable energy density ( 6.8 J/cm.sup.3) and a satisfied efficiency ( 82.2%) under external electric field of 450 kV/cm. Moreover, the x = 0.2 ceramic also exhibited a superb thermal reliability of energy storage properties (3.9-4.5 J/cm.sup.3 with variation of 13.3% in 25-160 °C) resulting from the diffuse phase transition. The above results make the x = 0.2 ceramics becoming promising candidates for pulsed-power devices.

The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr[sub.0.52]Ti[sub.0.48])O[sub.3]-0.25BiFeO[sub.3] (PZT-25BFO) thin film. Excitingly, PZT-25BFO thin film exhibits an exceptional capacitive energy storage density (Wrec = 24.61–39.76 J/cm[sup.3]) and a high efficiency (η = 53.78–72.74%). Furthermore, the dielectric energy storage density and efficiency enhance simultaneously with increasing thickness of the thin film. However, the loss factor shows the opposite trend. Specifically, the 12-layer PZT-25BFO thin film demonstrates the optimal properties, boasting a significant energy storage density (15.73 J/cm[sup.3]), a high efficiency (77.65%), and remarkable thermal stability (±0.55% variation) from 303 K to 383 K at 1000 kV/cm. This excellent thermal stability can be attributed to the residual stress resulting from a phase transition from the rhombohedral to tetragonal phase. The result offers valuable guidance for the development of ferroelectric thin films in high-power capacitive energy storage applications.

Diffusion is one of the key nature processes which plays an important role in respiration, digestion, and nutrient transport in cells. In this regard, the present article aims to review various diffusion approaches used to fabricate different functional materials based on hydrogels, unique examples of materials that control diffusion. They have found applications in fields such as drug encapsulation and delivery, nutrient delivery in agriculture, developing materials for regenerative medicine, and creating stimuli-responsive materials in soft robotics and microrobotics. In addition, mechanisms of release and drug diffusion kinetics as key tools for material design are discussed.

As nanosatellites make access to space more affordable and widespread, protecting onboard data from radiation-related damage has become a major challenge for modern low-cost missions. These small satellites often rely on commercial off-the-shelf (COTS) electronic components, which are particularly vulnerable to radiation-induced Single-Event Effects (SEEs) that can disrupt system operation and compromise mission data integrity. To address this challenge, our study proposes SEEnet, a lightweight ensemble learning framework designed for real-time prediction of SEE occurrence in nanosatellite systems. SEEnet combines multiple decision-tree classifiers with varying model depths using a soft-voting strategy, allowing it to improve prediction reliability while maintaining low computational complexity suitable for resource-constrained onboard environments. Our proposed approach is evaluated using a publicly available dataset from the Institute of Space Systems, University of Stuttgart, describing satellite spatial characteristics and associated SEE events. Experimental results show that SEEnet achieves a classification accuracy of 77%, outperforming several baseline machine-learning models, including Support Vector Machines, Random Forests, and Gradient Boosting, under the same evaluation conditions. In addition, the model demonstrates balanced precision-recall performance and provides bootstrap-based uncertainty estimates, enhancing confidence in its predictions. Overall, the results indicate that SEEnet offers an effective and computationally efficient solution for early SEE risk assessment, supporting proactive fault mitigation and improved data reliability in real-time nanosatellite missions.