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The past several decades have witnessed great progress in high‐performance field effect transistors (FET) as one of the most important electronic components. At the same time, due to their intrinsic advantages, such as multiparameter accessibility, excellent electric signal amplification function, and ease of large‐scale manufacturing, FET as tactile sensors for flexible wearable devices, artificial intelligence, Internet of Things, and other fields to perceive external stimuli has also attracted great attention and become a significant field of general concern. More importantly, FET has a unique three‐terminal structure, which enables its different components to detect external mechanics through different sensing mechanisms. On one hand, it provides an important platform to shed deep insights into the underlying mechanisms of the tactile sensors. On the other hand, these properties could in turn endow excellent components for the construction of tactile matrix sensor arrays with high quality. With special emphasis on the configuration of FETs, this review classified and summarized structure‐optimized FET tactile sensors with gate, dielectric layer, semiconductor layer, and source/drain electrodes as sensing active components, respectively. The working principles and the state‐of‐the‐art protocols in terms of high‐performance tactile sensors are detail discussed and highlighted, the innovative pixel distribution and integration analysis of the transistor sensor matrix array concerning flexible electronics are also introduced. We hope that the introduction of this review can provide some inspiration for future researchers to design and fabricate high‐performance FET‐based tactile sensor chips for flexible electronics and other fields. This review focuses on FET‐based tactile pressure sensors. The working principles of this kind of tactile sensors are discussed in detail, the state‐of‐the‐art protocols for high‐performance tactile sensing are highlighted, and the major advances in large‐scale tactile sensor arrays and their applications in robotics, health care, and smart manufacturing in terms of transistor matrix are also introduced.

The rapid advancement of wearable biosensors has revolutionized healthcare monitoring by screening in a non-invasive and continuous manner. Among various sensing techniques, field-effect transistor (FET)-based wearable biosensors attract increasing attention due to their advantages such as label-free detection, fast response, easy operation, and capability of integration. This review explores the innovative developments and applications of FET-based wearable biosensors for healthcare monitoring. Beginning with an introduction to the significance of wearable biosensors, the paper gives an overview of structural and operational principles of FETs, providing insights into their diverse classifications. Next, the paper discusses the fabrication methods, semiconductor surface modification techniques and gate surface functionalization strategies. This background lays the foundation for exploring specific FET-based biosensor designs, including enzyme, antibody and nanobody, aptamer, as well as ion-sensitive membrane sensors. Subsequently, the paper investigates the incorporation of FET-based biosensors in monitoring biomarkers present in physiological fluids such as sweat, tears, saliva, and skin interstitial fluid (ISF). Finally, we address challenges, technical issues, and opportunities related to FET-based biosensor applications. This comprehensive review underscores the transformative potential of FET-based wearable biosensors in healthcare monitoring. By offering a multidimensional perspective on device design, fabrication, functionalization and applications, this paper aims to serve as a valuable resource for researchers in the field of biosensing technology and personalized healthcare.

Highlights The review provides a brief overview of the basic structure, operating mechanism, and key performance indicators of flexible graphene field-effect transistors. The review details the preparation strategy of flexible graphene field-effect transistors focusing on material selection and patterning techniques. The review analyzes the latest strategies for developing wearable and implantable flexible biomedical sensors based on flexible graphene field-effect transistors. Flexible electronics are transforming our lives by making daily activities more convenient. Central to this innovation are field-effect transistors (FETs), valued for their efficient signal processing, nanoscale fabrication, low-power consumption, fast response times, and versatility. Graphene, known for its exceptional mechanical properties, high electron mobility, and biocompatibility, is an ideal material for FET channels and sensors. The combination of graphene and FETs has given rise to flexible graphene field-effect transistors (FGFETs), driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors. Here, we first provide a brief overview of the basic structure, operating mechanism, and evaluation parameters of FGFETs, and delve into their material selection and patterning techniques. The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities. We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors, focusing on the key aspects of constructing high-quality flexible biomedical sensors. Finally, we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors. This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.

Two-dimensional (2D) materials hold great promise for future applications, notably their use as biosensing channels in the field-effect transistor (FET) configuration. On the road to implementing one of the most widely used 2D materials, graphene, in FETs for biosensing, key issues such as operation conditions, sensitivity, selectivity, reportability, and economic viability have to be considered and addressed correctly. As the detection of bioreceptor-analyte binding events using a graphene-based FET (gFET) biosensor transducer is due to either graphene doping and/or electrostatic gating effects with resulting modulation of the electrical transistor characteristics, the gFET configuration as well as the surface ligands to be used have an important influence on the sensor performance. While the use of back-gating still grabs attention among the sensor community, top-gated and liquid-gated versions have started to dominate this area. The latest efforts on gFET designs for the sensing of nucleic acids, proteins and virus particles in different biofluids are presented herewith, highlighting the strategies presently engaged around gFET design and choosing the right bioreceptor for relevant biomarkers.

The development and application of artificial intelligence have led to the exploitation of low‐power and compact intelligent information‐processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS2/h‐BN/CuInP2S6 (CIPS)‐based ferroelectric field‐effect transistors (Fe‐FETs) and utilized light‐induced ferroelectric polarization reversal to achieve excellent memory properties and multi‐functional sensing‐memory‐computing vision simulations are designed. The device exhibits a high on/off current ratio of over 105, long retention time (>104 s), stable cyclic endurance (>350 cycles), and 128 multilevel current states (7‐bit). In addition, fundamental synaptic plasticity characteristics are emulated including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), long‐term potentiation, and long‐term depression. A ferroelectric optoelectronic reservoir computing system for the Modified National Institute of Standards and Technology (MNIST) handwritten digital recognition achieved a high accuracy of 93.62%. Furthermore, retina‐like light adaptation and Pavlovian conditioning are successfully mimicked. These results provide a strategy for developing a multilevel memory and novel neuromorphic vision systems with integrated sensing‐memory‐processing. A novel multi‐functional neuromorphic visual system with optoelectronic synergy based on SnS2/BN/CuInP2S6 full van der Waals ferroelectric field‐effect transistor is reported. The device demonstrates a high switching ratio of 105, multilevel storage states of 128 (7 bits), excellent synaptic plasticity, and an image recognition accuracy of 93.62% based on reservoir computing.

Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated systems. Here we overcome these challenges to demonstrate a beyond-silicon microprocessor built entirely from CNFETs. This 16-bit microprocessor is based on the RISC-V instruction set, runs standard 32-bit instructions on 16-bit data and addresses, comprises more than 14,000 complementary metal–oxide–semiconductor CNFETs and is designed and fabricated using industry-standard design flows and processes. We propose a manufacturing methodology for carbon nanotubes, a set of combined processing and design techniques for overcoming nanoscale imperfections at macroscopic scales across full wafer substrates. This work experimentally validates a promising path towards practical beyond-silicon electronic systems. A 16-bit microprocessor built from over 14,000 carbon nanotube transistors may enable energy efficiency advances in electronics technologies beyond silicon.

Organic field-effect transistors (OFETs) have been proposed beyond three decades while becoming a research hotspot again in recent years because of the fast development of flexible electronics. Many novel flexible OFETs-based devices have been reported in these years. Among these devices, flexible OFETs-based sensors made great strides because of the extraordinary sensing capability of FET. Most of these flexible OFETs-based sensors were designed for biological applications due to the advantages of flexibility, reduced complexity, and lightweight. This paper reviews the materials, fabrications, and applications of flexible OFETs-based biosensors. Besides, the challenges and opportunities of the flexible OFETs-based biosensors are also discussed. Graphical abstract

Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials. Half metallicity, an intriguing physical property arising from the metallic nature of electrons with singular spin polarization and insulating for oppositely polarized electrons, holds a great potential for a 100% spin-polarized current for high-efficiency spintronics. Conventionally synthesized thin films hardly sustain half metallicity inherited from their 3D counterparts. A fundamental challenge, in systems of reduced dimensions, is the almost inevitable spin-mixed edge or surface states in proximity to the Fermi level. Here, we predict electric field-induced half metallicity in bilayer A-type antiferromagnetic van der Waals crystals (i.e., intralayer ferromagnetism and interlayer antiferromagnetism), by employing density functional theory calculations on vanadium diselenide. Electric fields lift energy levels of the constituent layers in opposite directions, leading to the gradual closure of the gap of singular spin-polarized states and the opening of the gap of the others. We show that a vertical electrical field is a generic and effective way to achieve half metallicity in A-type antiferromagnetic bilayers and realize the spin field effect transistor. The electric field-induced half metallicity represents an appealing route to realize 2D half metals and opens opportunities for nanoscale highly efficient antiferromagnetic spintronics for information processing and storage.

The authors describe a field effect transistor (FET) based immunoassay for the detection of inactivated ebola virus (EBOV). An equine antibody against the EBOV glycoprotein was immobilized on the surface of the FET that was previously modified with reduced graphene oxide (RGO). The antibody against EBOV was immobilized on the modified FET, and the response to EBOV was measured as a function of the shift of Dirac voltage. The method can detect the EBOV over the concentration range from 2.4 × 10 −12  g·mL −1 to 1.2 × 10 −7  g·mL −1 and with a limit of detection as low as 2.4 pg·mL −1 . The assay has satisfactory specificity and was applied to the quantitation of inactivated EBOV in spiked serum. Graphical abstract Schematic presentation of the field effect transistor (FET) modified with reduced graphene oxide (RGO) for Ebola Virus (EBOV) detection. Specific binding between EBOV and the anti-EBOV antibody (Ab) on the FET device leads to obvious current change.

In comparison with traditional clinical diagnosis methods, field−effect transistor (FET)−based biosensors have the advantages of fast response, easy miniaturization and integration for high−throughput screening, which demonstrates their great technical potential in the biomarker detection platform. This mini review mainly summarizes recent advances in FET biosensors. Firstly, the review gives an overview of the design strategies of biosensors for sensitive assay, including the structures of devices, functionalization methods and semiconductor materials used. Having established this background, the review then focuses on the following aspects: immunoassay based on a single biosensor for disease diagnosis; the efficient integration of FET biosensors into a large−area array, where multiplexing provides valuable insights for high−throughput testing options; and the integration of FET biosensors into microfluidics, which contributes to the rapid development of lab−on−chip (LOC) sensing platforms and the integration of biosensors with other types of sensors for multifunctional applications. Finally, we summarize the long−term prospects for the commercialization of FET sensing systems.