Catalogue Search | MBRL
Are you sure you want to remove the book from the shelf?
{{itemTitle}}
58,062
result(s) for
"Gallium"
Sort by:
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.
Journal Article
Challenges for commercializing perovskite solar cells
The high power conversion efficiencies of small-area perovskite solar cells (PSCs) have driven interest in the development of commercial devices. Rong et al. review recent progress in addressing stability, how to allow mass production, and how to maintain uniformity of large-area films. They note that lifetimes exceeding 10,000 hours under 1 sun (1 kW/m 2 ) illumination have been reported for printable triple mesoscopic PSCs. Science , this issue p. eaat8235 Perovskite solar cells (PSCs) have witnessed rapidly rising power conversion efficiencies, together with advances in stability and upscaling. Despite these advances, their limited stability and need to prove upscaling remain crucial hurdles on the path to commercialization. We summarize recent advances toward commercially viable PSCs and discuss challenges that remain. We expound the development of standardized protocols to distinguish intrinsic and extrinsic degradation factors in perovskites. We review accelerated aging tests in both cells and modules and discuss the prediction of lifetimes on the basis of degradation kinetics. Mature photovoltaic solutions, which have demonstrated excellent long-term stability in field applications, offer the perovskite community valuable insights into clearing the hurdles to commercialization.
Journal Article
A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides
Two-dimensional (2D) oxides have a wide variety of applications in electronics and other technologies. However, many oxides are not easy to synthesize as 2D materials through conventional methods. We used nontoxic eutectic gallium-based alloys as a reaction solvent and co-alloyed desired metals into the melt. On the basis of thermodynamic considerations, we predicted the composition of the self-limiting interfacial oxide. We isolated the surface oxide as a 2D layer, either on substrates or in suspension. This enabled us to produce extremely thin subnanometer layers of HfO₂, Al₂O₃, and Gd₂O₃. The liquid metal–based reaction route can be used to create 2D materials that were previously inaccessible with preexisting methods. The work introduces room-temperature liquid metals as a reaction environment for the synthesis of oxide nanomaterials with low dimensionality.
Journal Article
An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
Gallium oxide (Ga
2
O
3
) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga
2
O
3
semiconductor have been analyzed. And the recent investigations on the Ga
2
O
3
-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga
2
O
3
-based SBD for power electronics application has been analyzed.
Journal Article
Cover Feature: Direct Conjugation of Gallium‐(III)‐Corroles to Short Interfering RNA(siRNA) Providing Real‐Time siRNA Imaging and Gene Silencing (ChemPlusChem 6/2024)
Invited for this month′s cover is the group of Jean‐Paul Desaulniers at Ontario Tech University. The cover picture shows the successful conjugation of a GaIII‐corrole to an siRNA to enable live cell imaging. Read the full text of the article at 10.1002/cplu.202400084. “The biggest surprise was not obtaining the triple therapeutic effect… that we would have expected with the introduction of GaIII‐corrole to the siRNA.” This and more about the story behind the front cover can be found in the article at 10.1002/cplu.202400084).
Journal Article
Highly efficient blue InGaN nanoscale light-emitting diodes
Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability
1
–
5
. However, μLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction
6
–
9
. Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE. To overcome the size-dependent EQE reduction problem
8
,
9
, we studied the interaction between the GaN surface and the sidewall passivation layer through various analyses. Minimizing the point defects created during the passivation process is crucial to manufacturing high-performance nLEDs. Notably, the sol–gel method is advantageous for the passivation because SiO
2
nanoparticles are adsorbed on the GaN surface, thereby minimizing its atomic interactions. The fabricated nLEDs showed an EQE of 20.2 ± 0.6%, the highest EQE value ever reported for the LED in the nanoscale. This work opens the way for manufacturing self-emissive nLED displays that can become an enabling technology for next-generation displays.
Using a sol–gel passivation method, the fabrication of blue InGaN nanorod-LEDs with the highest external quantum efficiency value ever reported for LEDs in the nanoscale is demonstrated.
Journal Article
A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations
Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.
Journal Article