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Type 1 diabetes (T1D) is an autoimmune disease characterized by the destruction of pancreatic β-cells. One of the earliest aspects of this process is the development of autoantibodies and T cells directed at an epitope in the B-chain of insulin (insB:9–23). Analysis of microbial protein sequences with homology to the insB:9–23 sequence revealed 17 peptides showing >50% identity to insB:9–23. Of these 17 peptides, the hprt4–18 peptide, found in the normal human gut commensal Parabacteroides distasonis, activated both human T cell clones from T1D patients and T cell hybridomas from nonobese diabetic (NOD) mice specific to insB:9–23. Immunization of NOD mice with P. distasonis insB:9–23 peptide mimic or insB:9–23 peptide verified immune cross-reactivity. Colonization of female NOD mice with P. distasonis accelerated the development of T1D, increasing macrophages, dendritic cells, and destructive CD8+ T cells, while decreasing FoxP3+ regulatory T cells. Western blot analysis identified P. distasonis–reacting antibodies in sera of NOD mice colonized with P. distasonis and human T1D patients. Furthermore, adoptive transfer of splenocytes from P. distasonis–treated mice to NOD/SCID mice enhanced disease phenotype in the recipients. Finally, analysis of human children gut microbiome data from a longitudinal DIABIMMUNE study revealed that seroconversion rates (i.e., the proportion of individuals developing two or more autoantibodies) were consistently higher in children whose microbiome harbored sequences capable of producing the hprt4–18 peptide compared to individuals who did not harbor it. Taken together, these data demonstrate the potential role of a gut microbiota-derived insB:9–23-mimic peptide as a molecular trigger of T1D pathogenesis.

InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III–V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed.

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈7×1017 cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

In this work, we propose and analyze a thermally tunable metasurface based on indium antimonide (InSb), designed to operate in the terahertz (THz) frequency range. The metasurface exhibits dual functionalities: single-band perfect absorption and efficient polarization conversion, enabled by the temperature-dependent permittivity of InSb. At approximately 280 K, InSb transitions into a metallic state, enabling the metasurface to achieve near-unity absorptance (100%) at 0.408 THz under normal incidence, independent of polarization. Conversely, when InSb behaves as a dielectric at 200 K, the metasurface operates as an efficient polarization converter. By exploiting structural anisotropy, it achieves a polarization conversion ratio exceeding 85% over the frequency range from 0.56 to 0.93 THz, while maintaining stable performance for incident angles up to 45°. Parametric analyses show that the resonance frequency and absorption intensity can be effectively tuned by varying the InSb square size and the silica (SiO2) layer thickness, achieving maximum absorptance at a SiO2 thickness of 16 μm. The proposed tunable metasurface offers significant potential for applications in THz sensing, imaging, filtering, and wavefront engineering.

Our current study employs the spin-polarized density functional theory (DFT) using the all-electron full potential linear augmented plane-wave method (FP-LAPW) to examine the structural, electronic, and magnetic properties of InSb doped with Tungsten (In W x Sb with x  = 0.125, 0.25) in the zinc blende crystal structure. We used, for the electronic exchange and correlation energy, the generalized gradient approximation (GGA) with the Wu-Cohen (WC) functional, improved with the Tran–Blaha modified Becke–Johnson (TB-mBJ) approach for the electronic properties. The obtained results show that this calculation method allows for reliable band gap values. The estimated structural properties match well with existing experimental results. The value of the total magnetic moment is around 3.00 µB for the investigated compounds, and because of their half-metallic ferromagnetic properties, they are regarded prospective candidates for spintronic applications.

We are reporting an esoteric method to determine the optical bandgap of direct gap materials by employing Urbach’s rule. The latter, which describes the slope of the band tail absorption in semiconductors, in its original version, cannot be employed to pinpoint the optical bandgap. Herein, however, we show that a modified form of Urbach’s rule defines the optical bandgap, and therefore, enables the accurate determination of the optical bandgap energy, which turns out to be identical with the threshold energy for the band tail absorption. The model further produces an explicit expression for the absorption coefficient at the optical bandgap energy.

Environmentally friendly InSb colloidal quantum dots (CQDs) short‐wave infrared (SWIR) photodetectors feature characteristics of low‐cost, high‐volume scalability, CMOS integrability, and compliance with RoHS regulations, and hold great commercial potential. Yet, their performance falls short of commercially relevant specifications. In this work, it is posited that CQD fusion observed in these dots leads to the formation of band‐tail trap states and it is further demonstrated that avoidance of such band‐tail trap states is crucial for device performance. By doing so, InSb CQDs SWIR photodetectors are reported with compelling performance metrics, including a dark current of 4 µA cm−2, EQE of ≈20% (at −1 V), a linear dynamic range over 140 dB and a response time of 90 ns. This represents a more than ten‐fold reduction in dark current compared to previously report InSb CQD photodetectors in the SWIR range. The record high PLQY of 10% for InSb/InP CQDs taken together with the high EQE of the device at zero bias confirm the achievement of high‐quality InSb CQDs through the suppression of band‐tail trap states and passivation of surface defects. This work shows that the fusion of InSb colloidal quantum dots (CQDs) leads to the formation of band‐tail trap states that are detrimental to the performance of optoelectronic devices. These results highlight the critical role of suppressing band‐tail trap states and passivating surface defects in enhancing device performance and motivate toward the development of highly monodisperse CQDs for high‐performance optoelectronic devices.

Calculated rocking curves are presented for the spectrometric scheme of a double-crystal diffractometer made of InSb crystals in the Laue–Laue geometry for neutron wavelength ranges corresponding to the weak potential and strong resonant absorptions. The appearance and shape of the curves calculated using the extended expression with allowance for the absorption cross section and the curves obtained using the Compton–Alisson expression are compared.

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 10 17 cm −3 and an electron mobility of 215.25 cm 2 V −1 s −1 . The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 10 4 A W −1 ), and quantum efficiency (1.96 × 10 6 %). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.

C-decorated intermetallic InSb (InSb–C) was developed as a novel high-performance anode material for lithium-ion batteries (LIBs). InSb nanoparticles synthesized via a mechanochemical reaction were characterized using X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDX). The effects of the binder and buffering matrix on the active InSb were investigated. Poly(acrylic acid) (PAA) was found to significantly improve the cycling stability owing to its strong hydrogen bonding. The addition of amorphous C to InSb further enhanced mechanical stability and electronic conductivity. As a result, InSb–C demonstrated good electrochemical Li-ion storage performance: a high reversible specific capacity (878 mAh·g−1 at 100 mA·g−1 after 140 cycles) and good rate capability (capacity retention of 98% at 10 A·g−1 as compared to 0.1 A·g−1). The effects of PAA and C were comprehensively studied using cyclic voltammetry, differential capacity plots, ex-situ SEM, and electrochemical impedance spectroscopy (EIS). In addition, the electrochemical reaction mechanism of InSb was revealed using ex-situ XRD. InSb–C exhibited a better performance than many recently reported Sb-based electrodes; thus, it can be considered as a potential anode material in LIBs.