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In this work, we propose and analyze a thermally tunable metasurface based on indium antimonide (InSb), designed to operate in the terahertz (THz) frequency range. The metasurface exhibits dual functionalities: single-band perfect absorption and efficient polarization conversion, enabled by the temperature-dependent permittivity of InSb. At approximately 280 K, InSb transitions into a metallic state, enabling the metasurface to achieve near-unity absorptance (100%) at 0.408 THz under normal incidence, independent of polarization. Conversely, when InSb behaves as a dielectric at 200 K, the metasurface operates as an efficient polarization converter. By exploiting structural anisotropy, it achieves a polarization conversion ratio exceeding 85% over the frequency range from 0.56 to 0.93 THz, while maintaining stable performance for incident angles up to 45°. Parametric analyses show that the resonance frequency and absorption intensity can be effectively tuned by varying the InSb square size and the silica (SiO2) layer thickness, achieving maximum absorptance at a SiO2 thickness of 16 μm. The proposed tunable metasurface offers significant potential for applications in THz sensing, imaging, filtering, and wavefront engineering.

We exploit InSb’s magnetic-induced optical properties to design THz sub-wavelength antennas that actively tune the radiative decay rates of dipole emitters at their proximity. The proposed designs include a spherical InSb antenna and a cylindrical Si-InSb hybrid antenna demonstrating distinct behaviors. The former dramatically enhances both radiative and non-radiative decay rates in the epsilon-near-zero region due to the dominant contribution of the Zeeman-splitting electric octupole mode. The latter realizes significant radiative decay rate enhancement via magnetic octupole mode, mitigating the quenching process and accelerating the photon production rate. A deep-learning-based optimization of emitter positioning further enhances the quantum efficiency of the proposed hybrid system. These novel mechanisms are promising for tunable THz single-photon sources in integrated quantum networks.

This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs–Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

Human knowledge of infrared (IR) radiation is about 200 years old. However it was in the late 20th century that we developed a wide range of smart technologies for detection and started to take advantage for our benefit. Today IR detector technology is in its 3rd generation and comes with challenging demands. Based on the propagation of IR radiation through free space it is divided into different transmission windows. The most interesting for thermal imaging are the mid-wave IR (MWIR) and the long-wave IR (LW IR). Infrared detectors for thermal imaging have a number of applications in industry, security, search & rescue, surveillance, medicine, research, meteorology, climatology and astronomy. Currently high-performance IR imaging technology is mainly based on epitaxially grown structures of the small-bandgap bulk alloy mercury-cadmium-telluride (MCT), indium antimonide (InSb) and GaAs based quantum-well infrared photodetectors (QWIPs), depending on the application and wavelength range. However, they operate at low temperatures requiring costly and bulky cryogenic systems. In addition there is always a need for better performance, which generates possibilities for developing new technologies. Some emerging technologies are quantum dot infrared photodetectors (QDIPs), type-II strained layer super-lattice, and QDIPs with type-II band alignment. In this report a brief review of the current and new technologies for high performance IR detectors, will be presented.

The electroluminescent characteristics of the InAs/InAs 1– y Sb y /InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region ( y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 μm at low temperatures ( T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.

Nanowires （NWs） are ideal nanostructures for exploring the effects of low dimensionality and thermal conductivity suppression on thermoelectric behavior. However, it is challenging to accurately measure temperature gradients and heat flow in such systems. Here, using a combination of spatially resolved Raman spectroscopy and transport measurements, we determine all the thermoelectric properties of single Se-doped InSb NWs and quantify the figure of merit ZT. The measured laser-induced heating in the NWs and associated electrical response are well described by a 1D heat equation model. Our method allows the determination of the thermal contact resistances at the source and drain electrodes of the NW, which are negligible in our system. The measured thermoelectric parameters of InSb NWs agree well with those obtained based on field-effect transistor Seebeck measurements.

Nanoporous structures have a great potential for application in electronic and photonic materials, including field effect transistors, photonic crystals, and quantum dots. The control of size and shape is important for such applications. In this study, nanoporous structure formation on the indium antimonide (InSb) surface was investigated using controlled focused ion beam irradiation. Upon increasing the ion dose, the structures grew larger, and the shapes changed from voids to pillars. The structures also became larger when the ion flux (high-dose) and accelerating voltage were increased. The structure grew obliquely on the substrate by following the ion beam irradiation of 45°. The shapes of the structures formed by superimposed ion beam irradiation were affected by primary irradiation conditions. The nanostructural features on the InSb surface were easy to control by changing the ion beam conditions.

Majorana zero-modes-a type of localized quasiparticle-hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e /h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e /h, with a recent observation of a peak height close to 2e /h. Here we report a quantized conductance plateau at 2e /h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

The long-term stability of a 640x512 InSb focal plane array (FPA) with a pitch of 15 μm combined with a Stirling cooler and an interface block has been investigated.The dependences of the FPA correctability index on the operation time after a two-point correction of the irregularity have been obtained. The FPAs with two different circuits of the readout LSI cells that differ in the integration capacitance and transmission coefficients are considered. It has been found that, for the InSb FPA, the long-term stability is as high as several hours, which ensures continuous operation of the array in thermal imaging systems without additional calibrations.

Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.