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We propose a unifying framework for four key domains in quantum technology–communication/computation, integrated interconnects, imaging/packaging, and metrology/standards–based on global phase locking (GPL) and multi-scale resonance mapping (MSRM). This approach shifts the focus from state replication to network-wide phase coherence, offering experimentally verifiable witnesses and scalable design principles.

Cu-cored solder interconnects have been demonstrated to increase the performance of interconnect structures, while the quantitative understanding of the effect of the Cu-cored structure on microstructure evolution and atomic migration in solder interconnects is still limited. In this work, the effect of the Cu-cored structure on phase migration and segregation behavior of Sn-58Bi solder interconnects under electric current stressing is quantitatively studied using a developed phase field model. Severe phase segregation and redistribution of Bi-rich phase are observed in the Cu-cored Sn-58Bi interconnects due to the more pronounced current crowding effect near the Cu core periphery. The average current density and temperature gradient in Sn-rich phase and Bi-rich phase decrease with an increase in the diameter of the Cu core. The temperature gradient caused by Joule heating is significantly reduced owing to the presence of the Cu core. Embedding of the Cu core in the solder matrix could weaken the directional diffusion flux of Bi atoms, so that the enrichment and segregation of the Bi phase towards the anode side are significantly reduced. Furthermore, the voltage across the solder interconnects is correspondingly changed due to the phase migration and redistribution.

A comparative radio‐frequency (RF) and crosstalk analysis is performed on carbon nano‐interconnects based on an efficient π‐type equivalent single‐conductor model of bundled multiwall carbon nanotubes (MWCNTs) and stacked multilayer graphene nanoribbons (MLGNRs). Simulation results are extracted using HSPICE for global‐level nano‐interconnects at the 14‐nm node. RF performance is evaluated in terms of skin depth and a 3‐dB bandwidth, while crosstalk performance is analysed in terms of crosstalk‐induced delay and average power consumption. The skin‐depth results indicate significant improvements in skin‐depth degradation at higher frequencies for AsF5‐doped zig‐zag MLGNRs compared with that of Cu, nanotubes and MWCNTs. The transfer gain results explicitly demonstrate that AsF5‐doped MLGNRs exhibit excellent RF behaviour, showing 10‐ and 20‐fold improvements over MWCNTs and copper (Cu), respectively. Further, the 3‐dB bandwidth calculations for AsF5‐doped MLGNRs suggest 18.6‐ and 9.7‐fold enhancement compared with Cu and MWCNTs at 1000 μm. Significant reductions are obtained in crosstalk‐induced out‐of‐phase delays for AsF5‐doped MLGNRs—their delay values were 84.7% and 60.24% less than those for Cu and MWCNTs. Further, AsF5‐doped MLGNRs present the most optimal energy‐delay product results, with values representing 98.6% and 99.6% improvements over their Cu and MWCNT counterparts at a global length of 1000 µm.

Recent development in heterogeneous integration for high-performance chips (HPC) demands higher power, which induces a higher level of current density per through-silicon via (TSV) and redistribution layer (RDL) interconnects. Change in electrical and thermomechanical properties during long-term current stressing can result in negative impact on signal integrity and reliability of the device. In this study, test samples of Si interposers containing TSVs with a multilayered RDL structure at the top were tested under current densities ranging from 1 × 105 A/cm2 to 2.5 × 105 A/cm2 at 200°C in vacuum. Microstructural changes were observed in the current-carrying TSVs, and the circuit resistance increased sharply during the test. This increase was associated with several damage modes, including migration of Sn and Ag from solder, and Ni from under-bump metallization, driven by electromigration, leading to alloying and formation of reaction products. A volume increase associated with phase transformations and electromigration-induced void formation defects are identified under highly accelerated testing conditions, which potentially affect the long-term reliability of TSV-containing structures and need to be considered in design and manufacturing protocols for devices and packages.

The recent discoveries of two-dimensional (2D) magnets 1 – 6 and their stacking into van der Waals structures 7 – 11 have expanded the horizon of 2D phenomena. One exciting application is to exploit coherent magnons 12 as energy-efficient information carriers in spintronics and magnonics 13 , 14 or as interconnects in hybrid quantum systems 15 – 17 . A particular opportunity arises when a 2D magnet is also a semiconductor, as reported recently for CrSBr (refs. 18 – 20 ) and NiPS 3 (refs. 21 – 23 ) that feature both tightly bound excitons with a large oscillator strength and potentially long-lived coherent magnons owing to the bandgap and spatial confinement. Although magnons and excitons are energetically mismatched by orders of magnitude, their coupling can lead to efficient optical access to spin information. Here we report strong magnon–exciton coupling in the 2D A-type antiferromagnetic semiconductor CrSBr. Coherent magnons launched by above-gap excitation modulate the exciton energies. Time-resolved exciton sensing reveals magnons that can coherently travel beyond seven micrometres, with a coherence time of above five nanoseconds. We observe these exciton-coupled coherent magnons in both even and odd numbers of layers, with and without compensated magnetization, down to the bilayer limit. Given the versatility of van der Waals heterostructures, these coherent 2D magnons may be a basis for optically accessible spintronics, magnonics and quantum interconnects. Excitons in the electronvolts range are found to couple strongly to coherent magnons in hundreds of microelectronvolts in an atomically thin two-dimensional antiferromagnetic semiconductor.

Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductor industry 1 , 2 . However, most studies in this field have been limited to the fabrication and characterization of isolated large (more than 1 µm 2 ) devices on unfunctional SiO 2 –Si substrates. Some studies have integrated monolayer graphene on silicon microchips as a large-area (more than 500 µm 2 ) interconnection 3 and as a channel of large transistors (roughly 16.5 µm 2 ) (refs.  4 , 5 ), but in all cases the integration density was low, no computation was demonstrated and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here, we present the fabrication of high-integration-density 2D–CMOS hybrid microchips for memristive applications—CMOS stands for complementary metal–oxide–semiconductor. We transfer a sheet of multilayer hexagonal boron nitride onto the back-end-of-line interconnections of silicon microchips containing CMOS transistors of the 180 nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the hexagonal boron nitride memristors, which allows us to achieve endurances of roughly 5 million cycles in memristors as small as 0.053 µm 2 . We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity signals that are suitable for the implementation of spiking neural networks. The high performance and the relatively-high technology readiness level achieved represent a notable advance towards the integration of 2D materials in microelectronic products and memristive applications. High-integration-density 2D–CMOS hybrid microchips for memristive applications are made demonstrating in-memory computation and electrical response suitable for the implementation of spiking neural networks representing an advance towards integration of 2D materials in microelectronic products and memristive applications.

Conductive polymer composites (CPCs) with the ability to maintain high conductivity whilst remaining flexible at various operating temperatures and conditions have gained interest as potential materials for electronic interconnect applications. The ability of a polymer matrix to conduct electricity is mainly dependent on the conductive filler loadings as well as the formation of network paths within the CPCs. The main aim of this research work was to establish and understand the correlation between the network structure formation and mechanical properties of linear low-density polyethylene/copper (LLDPE/Cu) and liquid silicone rubber/copper (LSR/Cu) CPCs. Various techniques such as electron microscopy, thermal studies, four-point probe, and tensile testing were employed in this study. Furthermore, selected samples were characterized and tested using synchrotron micro-x-ray fluorescence (XRF) technique and dynamic mechanical analysis (DMA). It was found that the electrical conductivity of the CPCs increased with increasing filler loadings. Addition of Cu filler had a marginal effect on the tensile strength of both LLDPE/Cu and LSR/Cu CPCs. Nevertheless, it was found that the elongation at break for LLDPE/Cu consistently increased with the addition of Cu whereas, for LSR/Cu samples, the elongation at break decreased with the addition of Cu at various loadings. The scanning electron microscopy (SEM) micrographs obtained show that the particles of Cu were closer to one another at higher filler loadings. The data obtained revealed the potential for utilizing CPCs as flexible interconnects suitable for advanced electronic applications.

Through silicon via (TSV) technology in three-dimensional integrated circuits can achieve interconnection through stacking chips, which is an important way to break through the limitations of advanced integrated circuit processes, improve overall chip performance, and reduce its size. This article introduces the preparation method of high-performance sputtering targets (including copper and tantalum targets) for TSV manufacturing. The uniformity of the microstructure (grain size, orientation) of the sputtering target was controlled through strict manufacturing techniques.

An interconnection of electric power networks enables decarbonization of the electricity system by harnessing and sharing large amounts of renewable energy. The highest potential renewable energy areas are often far from load centers, integrated through long-distance transmission interconnections. The transmission interconnection mitigates the variability of renewable energy sources by importing and exporting electricity between neighbouring regions. This paper presents an overview of regional and global energy consumption trends by use of fuel. A large power grid interconnection, including renewable energy and its integration into the utility grid, and globally existing large power grid interconnections are also presented. The technologies used for power grid interconnections include HVAC, HVDC (including LCC, VSC comprising of MMC-VSC, HVDC light), VFT, and newly proposed FASAL are discussed with their potential projects. Future trends of grid interconnection, including clean energy initiatives and developments, UHV AC and DC transmission systems, and smart grid developments, are presented in detail. A review of regional and global initiatives in the context of a sustainable future by implementing electric energy interconnections is presented. It presents the associated challenges and benefits of globally interconnected power grids and intercontinental interconnectors. Finally, in this paper, research directions in clean and sustainable energy, smart grid, UHV transmission systems that facilitate the global future grid interconnection goal are addressed.

Softening of thermoelectric generators facilitates conformal contact with arbitrary-shaped heat sources, which offers an opportunity to realize self-powered wearable applications. However, existing wearable thermoelectric devices inevitably exhibit reduced thermoelectric conversion efficiency due to the parasitic heat loss in high-thermal-impedance polymer substrates and poor thermal contact arising from rigid interconnects. Here, we propose compliant thermoelectric generators with intrinsically stretchable interconnects and soft heat conductors that achieve high thermoelectric performance and unprecedented conformability simultaneously. The silver-nanowire-based soft electrodes interconnect bismuth-telluride-based thermoelectric legs, effectively absorbing strain energy, which allows our thermoelectric generators to conform perfectly to curved surfaces. Metal particles magnetically self-assembled in elastomeric substrates form soft heat conductors that significantly enhance the heat transfer to the thermoelectric legs, thereby maximizing energy conversion efficiency on three-dimensional heat sources. Moreover, automated additive manufacturing paves the way for realizing self-powered wearable applications comprising hundreds of thermoelectric legs with high customizability under ambient conditions. Though flexible thermoelectric generators (TEGs) are attractive for energy harvesting applications, existing devices show low efficiency due to heat loss and poor thermal contact. Here, the authors report high-performance conformable TEGs with stretchable interconnects and soft heat conductors.