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Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.

We present the numerical proof of a new sensor concept, based on the Resistive AC-Coupled Silicon Detectors (RSDs) paradigm and standard CMOS process, which benefits from having a 100% fill factor and embedded front-end electronics. The compatibility between these two technologies has been investigated, and our encouraging results suggest that this target could be reliably achieved, enabling the possibility to considerably boost the performance of current silicon detectors intended for timing and 4D-tracking.

Gain suppression induced by excess carriers in Low Gain Avalanche Detectors (LGADs) has been investigated using 3 MeV protons in a nuclear microprobe. In order to modify the ionization density inside the detector, Ion Beam Induced Current (IBIC) measurements were performed at different proton beam incidence angles between 0° and 85°. The experimental results have been analyzed as a function of the ionization density projected on the multiplication layer, finding that the increase of ionization density leads to greater gain suppression. For bias voltages close to the gain onset value, this decrease in gain results into a significant distortion of the transient current waveforms measured by the Time-Resolved IBIC (TRIBIC) technique due to a deficit in the secondary holes component. For angles of incidence such that the Bragg peak falls within the sensitive volume of the detector, the formation of microplasmas modifies the behavior of the gain curves, producing an abrupt decrease in gain as the angle increases.

Over the past few years, Low-Gain Avalanche Detectors (LGADs) have demonstrated excellent timing performance, showing great potential for use in 4D tracking of high-energy charged particles. Carbon co-doping is a key factor for enhancing LGAD performance, which are detectors with intrinsic amplification, in harsh radiation environments. This work presents a broad pre-irradiation characterization of the latest carbon-co-implanted (or carbonated) LGADs fabricated at IMB-CNM. The results indicate that the addition of carbon reduces the nominal gain of the devices compared with non-carbonated detectors. Furthermore, a comprehensive study is presented on how carbon co-implantation can either enhance or suppress the diffusion of the multiplication layer during LGAD fabrication, depending on the device structure and fabrication parameters.

In this contribution, we explored the interplay of guard ring (GR) configuration and isolation structures, as well as irradiation effects, which all together create a rich landscape of phenomena such as self-induced signals (“ghosts”) in trench-isolated Low-Gain Avalanche Diodes (TI-LGADs). The ghost effect is related to the increased surface current due to presence of SiO2 trenches (and defects) in studied diodes, but it is also affected by interplay between the guard ring(s) and the n+ bias ring, implanted in inter-pixel region of these devices. In double-trenched sensors, the n+ bias ring is inserted in between the two trenches. We present the investigation on the role of these structures on the self-induced signals in trench-isolated sensors from two different productions (RD50 and AIDAinnova). The sensors from the first production have multiple guard rings, whereas the second type of devices feature only one. Detailed examination of the ghost effect and leak current was performed when guard rings were left floating or connected to the pixels (brought to the same potential). The results show that guard ring configuration in trenched sensors can be critical for the leak current and the presence of a ghost signal. To our best knowledge, the latter problem has not been investigated yet.

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

The acceptor removal process is the most detrimental effect encountered in irradiated boron-doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) defect with bistable properties that are reflected in the electrical measurements performed in usual ambient laboratory conditions. In this work, the electronic properties of the BCD defect in its two different configurations (A and B) and the kinetics behind transformations are determined from the variations in the capacitance-voltage characteristics in the 243–308 K temperature range. The changes in the depletion voltage are consistent with the variations in the BCD defect concentration in the A configuration, as measured with the thermally stimulated current technique. The A→B transformation takes place in non-equilibrium conditions when free carriers in excess are injected into the device. B→A reverse transformation occurs when the non-equilibrium free carriers are removed. Energy barriers of 0.36 eV and 0.94 eV are determined for the A→B and B→A configurational transformations, respectively. The determined transformation rates indicate that the defect conversions are accompanied by electron capture for the A→B conversion and by electron emission for the B→A transformation. A configuration coordinate diagram of the BCD defect transformations is proposed.

Pixelated LGADs have been established as the baseline technology for timing detectors for the High Granularity Timing Detector (HGTD) and the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area present between pixels and the consequent reduction in the fill factor. To overcome this issue, the inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and provide excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for surface damage irradiation by developing a new generation of iLGADs, the periphery of which is optimized to improve the performance of irradiated sensors. The fabricated iLGAD sensors exhibit good electrical performances before and after X-ray irradiation.

The particle flux increase (pile-up) at the HL-LHC with luminosities of L = 7.5 × 1034 cm−2 s−1 will have a significant impact on the reconstruction of the ATLAS detector and on the performance of the trigger. The forward region and the end-cap where the internal tracker has poorer longitudinal track impact parameter resolution, and where the liquid argon calorimeter has coarser granularity, will be significantly affected. A High Granularity Time Detector (HGTD) is proposed to be installed in front of the LAr end-cap calorimeter for the mitigation of the pileup effect, as well as measurement of luminosity. It will have coverage of 2.4 to 4.0 from the pseudo-rapidity range. Two dual-sided silicon sensor layers will provide accurate timing information for minimum-ionizing particles with a resolution better than 30 ps per track (before irradiation), for assigning each particle to the correct vertex. The readout cells are about 1.3 mm × 1.3 mm in size, which leads to a high granular detector with 3 million channels. The technology of low-gain avalanche detectors (LGAD) with sufficient gain was chosen to achieve the required high signal-to-noise ratio. A dedicated ASIC is under development with some prototypes already submitted and evaluated. The requirements and general specifications of the HGTD will be maintained and discussed. R&D campaigns on the LGAD are carried out to study the sensors, the related ASICs and the radiation hardness. Both laboratory and test beam results will be presented.

PIONEER is a next-generation experiment to measure the charged pion branching ratios to electrons vs. muons Re/μ=Γπ+→e+ν(γ)Γπ+→μ+ν(γ) and pion beta decay (Pib) π+→π0eν. The pion to muon decay (π→μ→e) has four orders of magnitude higher probability than the pion to electron decay (π→eν). To achieve the necessary branching-ratio precision it is crucial to suppress the π→μ→e energy spectrum that overlaps with the low energy tail of π→eν. A high granularity active target (ATAR) is being designed to suppress the muon decay background sufficiently so that this tail can be directly measured. In addition, ATAR will provide detailed 4D tracking information to separate the energy deposits of the pion decay products in both position and time. This will suppress other significant systematic uncertainties (pulse pile-up, decay in flight of slow pions) to <0.01%, allowing the overall uncertainty in to be reduced to O (0.01%). The chosen technology for the ATAR is Low Gain Avalanche Detector (LGAD). These are thin silicon detectors (down to 50 μm in thickness or less) with moderate internal signal amplification and great time resolution. To achieve a 100% active region several emerging technologies are being evaluated, such as AC-LGADs and TI-LGADs. A dynamic range from MiP (positron) to several MeV (pion/muon) of deposited charge is expected, the detection and separation of close-by hits in such a wide dynamic range will be a main challenge. Furthermore, the compactness and the requirement of low inactive material of the ATAR present challenges for the readout system, forcing the amplifier chip and digitizer to be positioned away from the active region.