Search Results Heading

MBRLSearchResults

mbrl.module.common.modules.added.book.to.shelf
Title added to your shelf!
View what I already have on My Shelf.
Oops! Something went wrong.
Oops! Something went wrong.
While trying to add the title to your shelf something went wrong :( Kindly try again later!
Are you sure you want to remove the book from the shelf?
Oops! Something went wrong.
Oops! Something went wrong.
While trying to remove the title from your shelf something went wrong :( Kindly try again later!
    Done
    Filters
    Reset
  • Discipline
      Discipline
      Clear All
      Discipline
  • Is Peer Reviewed
      Is Peer Reviewed
      Clear All
      Is Peer Reviewed
  • Item Type
      Item Type
      Clear All
      Item Type
  • Subject
      Subject
      Clear All
      Subject
  • Year
      Year
      Clear All
      From:
      -
      To:
  • More Filters
      More Filters
      Clear All
      More Filters
      Source
    • Language
465,604 result(s) for "Liquors"
Sort by:
Effects of a Spike-Annealed HfOsub.2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
Various high-k dielectrics have been proposed for AlGaN/GaN MOSHEMTs for gate leakage and drain-current collapse suppression. Hafnium oxide (HfO[sub.2]) is particularly interesting because of its large bandgap, high dielectric constant, and ferroelectricity under specific phase and doping conditions. However, defects and surface scattering caused by HfO[sub.2] dissimilarity and degraded HfO[sub.2]/GaN interface quality still leave the challenge of reducing the SS and R [sub.on]. In this study, we investigated the effects of the first spike-annealed HfO[sub.2] (6 nm) layer, compared with the conventional ALD-HfO[sub.2] (6 nm) layer in the HfO[sub.2] bilayer gate dielectric structure on AlGaN/GaN HEMTs. Both devices exhibit negligible hysteresis and near-ideal (~60 mV/dec) subthreshold slopes of more than three orders of magnitude. The device with the first annealed HfO[sub.2] layer exhibited a reduced R [sub.on] with notably less gate bias dependency and enhanced output current. On the other hand, the capacitance–voltage and conductance methods revealed that the border and interface trap densities of the device were inferior to those of the conventional HfO[sub.2] layer. The trade-off between enhanced electrical performance and oxide traps is discussed based on these results.
Micro-Nanoarchitectonics of Gasub.2Osub.3/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection
This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga[sub.2]O[sub.3]/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga[sub.2]O[sub.3]/GaN core-shell rod arrays were fabricated with high-temperature oxidization of GaN micro-nanorod arrays. The PD based on the microrod arrays exhibited an ultrahigh responsivity of 2300 A/W for 280 nm at 7 V, the peak responsivity was approximately 400 times larger than those of the PD based on the planar Ga[sub.2]O[sub.3]/GaN film. The responsivity was over 1500 A/W for the 270–360 nm band at 7 V. The external quantum efficiency was up to 1.02 × 10[sup.6]% for 280 nm. Moreover, the responsivity was further increased to 2.65 × 10[sup.4] A/W for 365 nm and over 1.5 × 10[sup.4] A/W for 270–360 nm using the nanorod arrays. The physical mechanism may have been attributed to the large surface area of the micro-nanorods coupled with the Ga[sub.2]O[sub.3]/GaN heterostructure, which excited more photogenerated holes to be blocked at the Ga[sub.2]O[sub.3] surface and Ga[sub.2]O[sub.3]/GaN interface, resulting in a larger internal gain. The overall high performance coupled with large-scale production makes it a promising candidate for practical BUV PD.
APORTACIONES DE PAREDES DE NAVA A LAS CAMPAÑAS MILITARES DEL INFANTE DON FERNANDO, SEÑOR DE LA VILLA Y REGENTE DE CASTILLA, CONTRA EL REINO NAZARÍ DE GRANADA EN 1407 Y EN 1410
Abstract This article looks at the contribution made by the town of Paredes de Nava to the military campaigns of the Infante Fernando -known as «de Antequera»- lord of the town and regent of Castile, against the Nasrid kingdom of Granada in 1407 and 1410. In this regard, we will analyse the election of the combatants, the main contribution of the town in 1410, their permanence in the campaign or their behaviour, in addition to the theoretical time of departure and the itinerary followed. Furthermore, we will briefly examine news concerning the progress of the war that arrived to Paredes, as well as the council's expenses on festivities to celebrate the Castilian victory. Otros ámbitos de la Corona de Castilla también cuentan con alguna escasa aportación bibliográfica, como la que hace Menjot para Murcia con «El peso de la guerra en la economía murciana: el ejemplo de la campaña de 1407-1408 contra Granada»13.
IOT: EMPOWERED ALCOHOL SENSING SYSTEM FOR SAFETY DRIVING IN TWO WHEELERS
Driving under the influence is starting at now a certified general clinical issue, which is presumably going to rise as one of the most noteworthy issues now. The framework targets decreasing the traffic mishap in the near future due to inebriated and drive. The advancement in utilizing the liquor detector ,a gadget that detects an adjustment in the alcoholic pollen gas substance of the encompassing air these gadget is all the more ordinarily alluded to as a breath investigation, as it examination the liquor content from individual's breath. The framework recognizes the nearness of liquor in the rider and promptly bolts the motor of the vehicle.
Comparison of Quantum Transition Characteristics of Group II–VI Semiconductors in Response to Externally Applied Energy
In this paper, we study the line-shape (LS), which indicates the amount of absorbed energy, and the line-width (LW), which indicates the scattering factor, according to the vibrational direction of the externally applied energy in the electron–phonon potential interaction system of representative semiconductor bonding types, group II–VI (ZnO) and group III–V (GaN) bonded compound semiconductors and pure group IV (Si) bonded semiconductors. One of the two systems receives the externally applied energy of right-handed circular polarization vibration, and the other receives the externally applied energy of left-handed circular polarization vibration. To analyze the quantum transport, we first employ quantum transport theory (QTR) for an electron system confined within a square-well potential, where the projected Liouville equation is addressed using the balanced-average projection method. In analyzing quantum transitions, phonon emission is linked to the transition line-width (LW), whereas phonon absorption is evaluated through the transition line-shape (LS), highlighting its sensitivity to temperature and magnetic field variations. As a result of analyzing the line-width (LW), which is a quantum scattering coefficient, and the line-shape (LS), which represents the absorbed power, the absorbed power and scattering coefficient were higher for the left circularly polarized vibration under the influence of the external magnetic field. In contrast, the right polarization produced smaller values. In addition, the scattering coefficient (LW) and the absorbed power according to the bonding type of the semiconductor were the largest in Si, a group IV bonded semiconductor, followed by group III–V (GaN) and group II–VI (ZnO) bonded semiconductors.
Band alignment and polarization engineering in kappa-Ga.sub.2O.sub.3/GaN ferroelectric heterojunction
Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance. In this work, we report on the heteroepitaxial construction, band structure alignment and polarization engineering of the single-phased [kappa]-[Ga.sub.2][O.sub.3]/GaN ferroelectric/polar heterojunction. A type-II band alignment is determined at the [kappa]-[Ga.sub.2][O.sub.3]/GaN polar hetero-interface, with a valence band offset of (1.74 [+ or -] 0.1) eV and a conduction band offset of (0.29 [- or +] 0.1) eV. Besides the band edge discontinuity, charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV, respectively, at the [kappa]-[Ga.sub.2][O.sub.3] surface and [kappa]-[Ga.sub.2][O.sub.3]/GaN interface. The polarization switching properties of ferroelectric [kappa]- [Ga.sub.2][O.sub.3] are identified with a remanent polarization of approximately 2.7 [mu]C/[cm.sup.2] via the direct hysteresis remanent polarization/voltage (P-V) loop measurement. These findings allow the rational design of [kappa]-[Ga.sub.2][O.sub.3] ferroelectric/polar heterojunction for the application of power electronic devices, advanced memories and even ultra-low loss negative capacitance transistors. wide-bandgap semiconductors, ferroelectric polarization, band alignment PACS number(s): 73.40.Qv, 73.61.Le, 77.55.fp
CRITERIOS DE AVALIACAO DOS SERVICOS PRESTADOS PELAS ACADEMIAS DE GINASTICA/EVALUATION CRITERIA OF THE SERVICES PROVIDED BY THE FITNESS CENTERS/CRITERIOS DE EVALUACION DE LOS SERVICIOS PRESTADOS POR LOS GIMNASIOS
Objetivo do estudo: Identificar os critérios considerados importantes para o bom desempenho das academias de ginástica, na visao dos clientes e administradores. Metodologia/abordagem: Foi empregada a técnica Delphi a uma amostra constituída por 90 clientes e 30 administradores. Para a análise dos dados foram empregadas a estatística descritiva e análise de conteúdo. Originalidade/Relevância: A pesquisa promove a comparaçao entre clientes e administradores de academias de ginástica sobre os serviços prestados, proporcionando a análise das perspectivas entre o prestador de serviços e o consumidor. Principais resultados: Foram evidenciados 51 critérios considerados importantes para o bom desempenho de academias. Após a análise de conteúdo foram identificadas quatro dimensoes, sendo: Ambiente, Gestao, Marketing e Acessibilidade, representadas pelos indicadores: Estímulo, Estrutura, Limpeza, Planejamento, Atendimento, Administraçao, Qualificaçao dos profissionais, Inovaçao, Comunicaçao e Estratégia. Contribuiçoes teóricas/metodológicas: Os critérios considerados importantes frente os serviços prestados pelas academias de ginásticas sao extremamente amplos, atingindo vários setores da empresa e que demonstram um conflito de perspectivas entre clientes e administradores, o que pode interferir diretamente na estabilidade comercial da academia. Palavras-chave: Academias de Ginástica. Prestaçao de Serviços. Desempenho. Qualidade. Objective: Identify the criteria considered important for the good performance of fitness centers in the view of clients and administrators. Methodology / Approach: The Delphi technique was used for a sample of 90 clients and 30 administrators. Descriptive statistics and content analysis were used to analyze the data. Originality / Relevance: The research promotes the comparison between clients and fitness centers administrators about the services provided, providing an analysis of the perspectives between the service provider and the consumer. Main results: The results showed 51 items considered important for the good performance of fitness centers. After content analysis, three dimensions were identified: Environment, Management, Marketing and Accessibility, represented by the indicators: Stimulus, Structure, Cleanliness, Planning, Service, Administration, Qualification of professionals, Innovation, Communication and Strategy. Theoretical / methodological contributions: the criteria considered important in relation to the services provided by the fitness centers are extremely broad, reaching various sectors of the company and showing a conflict of perspectives between clients and administrators, which can directly interfere with the commercial stability of the fitness centers. Keywords: Fitness Centers. Provision of Services. Performance. Quality. Objetivo: Identificar los criterios considerados importantes para el buen desempeño de los gimnasios, en la visión de los clientes y administradores. Método: Se empleó la técnica Delphi a una muestra constituida por 90 clientes y 30 administradores. Para el análisis de los datos se emplearon la estadística descriptiva y el análisis de contenido. Originalidad / Relevancia: La investigación promueve la comparación entre clientes y administradores de gimnasios sobre los servicios prestados, proporcionando un análisis de las perspectivas entre el proveedor de servicios y el consumidor. Resultados: Los resultados evidenciaron 51 items considerados importantes para el buen desempeno de gimnasios. Después del análisis de contenido se identificaron tres dimensiones: Medio Ambiente, Gestión, Marketing y Accesibilidad, representadas por los indicadores: Estimulo, Estructura, Limpieza, Planificación, Servicio, Administración, Calificación de profesionales, Innovación, Comunicación y Estrategia. Contribuciones teóricas / metodológicas: Los criterios considerados importantes en relación con los servicios prestados por los gimnasios son extremadamente amplios, alcanzan diversos sectores de la empresa y muestran un conflicto de perspectivas entre clientes y administradores, lo que puede interferir directamente con la estabilidad comercial del gimnasio. Palabras clave: Gimnasios. Prestación de Servicios. Rendimiento. Calidad.
Charge-Controlled Energy Optimization of the Reconstruction of Semiconductor Surfaces: spsup.3–spsup.2 Transformation of Stoichiometric GaN Pattern
It was demonstrated by ab initio calculations that energy optimization in the reconstruction of semiconductor surfaces is controlled by the global charge balance. The charge control was discovered during simulations of the influence of heavy doping in the GaN bulk, which changes sp [sup.3] to sp [sup.2] ratio in the reconstruction of stoichiometric GaN(0001), i.e., a Ga-polar surface. Thus, the reconstruction is not limited to the charge in the surface only; it can be affected by the charge in the bulk. The discovered new reconstruction of the GaN(0001) surface is (4 × 4), which is different from the previously reported (2 × 1) pattern. The undoped GaN reconstruction is surface charge controlled; accordingly, (3/8) top-layer Ga atoms remain in a standard position with sp [sup.3] hybridized bonding, while the remaining (5/8) top-layer Ga atoms are shifted into the plane of N atoms with sp [sup.2] hybridized bonding. The change in the charge balance caused by doping in the bulk leads to a change or disappearance of the reconstruction pattern.
Ethyl carbamate in Chinese liquor (Baijiu): presence, analysis, formation, and control
Ethyl carbamate (EC) is a genotoxic and carcinogenic compound that is also a by-product of fermented foods (bread, sour milk, soy cheese, etc.) and alcoholic beverages (wine, sake, distilled liquor, etc.). Studies have showed that ethyl carbamate is ingested by humans primarily through the consumption of alcoholic beverages. Many countries have thus established EC limits for alcoholic beverages. Chinese liquor (Baijiu) is a traditional and unique distilled liquor, which has a huge consumption in China due to its excellent color, flavor, and taste. Therefore, the control of EC in Chinese liquor is of great significance. This review summarized for the first time the progress in presence level, analysis method, formation mechanism, and elimination strategy of EC of Chinese liquor in recent decades.Key points• GC-MS and HPLC are the main methods to quantify EC in Chinese liquor.• EC is formed in the fermentation, distillation, and storage stage.• EC content can be reduced from raw material, microorganism, and production process.