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The costumes of the various tribes, portraits of ladies of rank, celebrated princes and chiefs, views of the principal fortresses and cities, and interior of the cities and temples of Afghaunistaun
Rattray was a Lieutenant in the Bengal Army and took part in the first Afghan War, from 1839 to 1842.
Rare Book
Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication
Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lithography, electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL), and nanoimprint lithography (NIL). Each method is analyzed based on its working principles, resolution, resist materials, and applications. EUV lithography, with sub-10 nm resolution, is vital for extending Moore’s Law, leveraging high-NA optics and chemically amplified resists. EBL and IBL enable high-precision maskless patterning for prototyping but suffer from low throughput. XRL, using synchrotron radiation, achieves deep, high-resolution features, while NIL provides a cost-effective, high-throughput method for replicating nanostructures. Alignment marks play a key role in precise layer-to-layer registration, with innovations enhancing accuracy in advanced systems. The mask fabrication process is also examined, highlighting materials like molybdenum silicide for EUV and defect mitigation strategies such as automated inspection and repair. Despite challenges in resolution, defect control, and material innovation, lithography remains indispensable in semiconductor scaling, supporting applications in integrated circuits, photonics, and MEMS/NEMS devices. Various molecular strategies, mechanisms, and molecular dynamic simulations to overcome the fundamental lithographic limits are also highlighted in detail. This review offers insights into lithography’s present and future, aiding researchers in nanoscale manufacturing advancements.
Journal Article
The costumes of the various tribes and interior of the cities and temples of Afghaunistaun
Rattray was a Lieutenant in the Bengal Army and took part in the first Afghan War, from 1839 to 1842.
Rare Book
Grayscale Lithography and a Brief Introduction to Other Widely Used Lithographic Methods: A State-of-the-Art Review
Lithography serves as a fundamental process in the realms of microfabrication and nanotechnology, facilitating the transfer of intricate patterns onto a substrate, typically in the form of a wafer or a flat surface. Grayscale lithography (GSL) is highly valued in precision manufacturing and research endeavors because of its unique capacity to create intricate and customizable patterns with varying depths and intensities. Unlike traditional binary lithography, which produces discrete on/off features, GSL offers a spectrum of exposure levels. This enables the production of complex microstructures, diffractive optical elements, 3D micro-optics, and other nanoscale designs with smooth gradients and intricate surface profiles. GSL plays a crucial role in sectors such as microelectronics, micro-optics, MEMS/NEMS manufacturing, and photonics, where precise control over feature depth, shape, and intensity is critical for achieving advanced functionality. Its versatility and capacity to generate tailored structures make GSL an indispensable tool in various cutting-edge applications. This review will delve into several lithographic techniques, with a particular emphasis on masked and maskless GSL methods. As these technologies continue to evolve, the future of 3D micro- and nanostructure manufacturing will undoubtedly assume even greater significance in various applications.
Journal Article
Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes
An antireflection coating was created for InP-based pin photodiodes using natural lithography with 100 nm-diameter SiO^sub 2^ spheres. The surface showed a normal-incidence reflection of <5% for wavelengths from 900 to 2500 nm. Photodiodes with surface texturing showed an enhancement in quantum efficiency with no dark current degradation. [PUBLICATION ABSTRACT]
Journal Article
Research progress of laser lithography
Lithography is one of the key technologies that restrict the development of the semiconductor industry and its important role continues to be highlighted. This paper will review laser projection lithography and laser maskless lithography based on the theoretical knowledge of laser lithography, present the advantages of laser maskless lithography, discuss the latest progress of laser lithography in application fields, explore its development prospects and trends, and provide some ideas and inspiration for the further development of human laser lithography. The result shows that laser lithography can be used in the field of material processing, and lithography is one of the key technologies to fabricate semiconductor devices. The world’s most advanced lithography machine is the EUV lithography machine of the Dutch ASML. This EUV lithography machine can be used for the production of 5nm chips, so 5nm is the most advanced chip manufacturing process that EUV lithography machine can achieve. Since lithography is a high degree of composite technology, each component plays an irreplaceable role. Therefore, if further improvements are to be made to the chip process, researchers should look at all parts of the exposure system, photoresist and process technology to make them work together in harmony.
Journal Article
Crosslinking-induced patterning of MOFs by direct photo- and electron-beam lithography
Metal-organic frameworks (MOFs) with diverse chemistry, structures, and properties have emerged as appealing materials for miniaturized solid-state devices. The incorporation of MOF films in these devices, such as the integrated microelectronics and nanophotonics, requires robust patterning methods. However, existing MOF patterning methods suffer from some combinations of limited material adaptability, compromised patterning resolution and scalability, and degraded properties. Here we report a universal, crosslinking-induced patterning approach for various MOFs, termed as CLIP-MOF. Via resist-free, direct photo- and electron-beam (e-beam) lithography, the ligand crosslinking chemistry leads to drastically reduced solubility of colloidal MOFs, permitting selective removal of unexposed MOF films with developer solvents. This enables scalable, micro-/nanoscale (≈70 nm resolution), and multimaterial patterning of MOFs on large-area, rigid or flexible substrates. Patterned MOF films preserve their crystallinity, porosity, and other properties tailored for targeted applications, such as diffractive gas sensors and electrochromic pixels. The combined features of CLIP-MOF create more possibilities in the system-level integration of MOFs in various electronic, photonic, and biomedical devices.
Precise and scalable patterning is essential for the use of metal-organic frameworks (MOFs) in solid-state electronics and photonics. Here, the authors report on resistance-free, direct photo- and electron-beam lithography of MOF films using crosslinking chemistry.
Journal Article
Direct X-ray and electron-beam lithography of halogenated zeolitic imidazolate frameworks
Metal–organic frameworks (MOFs) offer disruptive potential in micro- and optoelectronics because of the unique properties of these microporous materials. Nanoscale patterning is a fundamental step in the implementation of MOFs in miniaturized solid-state devices. Conventional MOF patterning methods suffer from low resolution and poorly defined pattern edges. Here, we demonstrate the resist-free, direct X-ray and electron-beam lithography of MOFs. This process avoids etching damage and contamination and leaves the porosity and crystallinity of the patterned MOFs intact. The resulting high-quality patterns have excellent sub-50-nm resolution, and approach the mesopore regime. The compatibility of X-ray and electron-beam lithography with existing micro- and nanofabrication processes will facilitate the integration of MOFs in miniaturized devices.
The low dielectric constants and high porosity of MOFs are of interest for applications in electronics and sensors, but patterning techniques for these materials are in their infancy. Here, direct X-ray and electron-beam lithography at sub-50-nm resolution are reported that leave porosity and crystallinity intact.
Journal Article
Coulomb-correlated electron number states in a transmission electron microscope beam
While correlated electrons are at the heart of many phenomena in condensed matter, as well as atomic and molecular physics, Coulomb interactions in free-electron beams are generally considered detrimental. Here, we demonstrate the generation of Coulomb-correlated pair, triple and quadruple states of free electrons by femtosecond photoemission from a nanoscale field emitter inside a transmission electron microscope. Event-based electron spectroscopy allows the spatial and spectral characterization of the electron ensemble emitted by each laser pulse. We identify distinctive energy and momentum correlations arising from acceleration-enhanced interparticle energy exchange, revealing strong few-body Coulomb interactions at an energy scale of 2 eV. State-sorted beam caustics show a discrete increase in virtual source size and longitudinal source shift for few-electron states, associated with transverse momentum correlations. We observe field-controllable electron antibunching, attributed primarily to transverse Coulomb deflection. The pronounced spatial and spectral characteristics of these electron number states allow filtering schemes that control the statistical distribution of the pulse charge. In this way, the fraction of specific few-electron states can be actively suppressed or enhanced, facilitating the preparation of highly non-Poissonian electron beams for microscopy and lithography, including future heralding schemes and correlated multi-electron probing.Coulomb interactions in free-electron beams are usually seen as an adverse effect. The creation of distinctive number states with one, two, three and four electrons now reveals unexpected opportunities for electron microscopy and lithography from Coulomb correlations.
Journal Article
Integrated Optics: Platforms and Fabrication Methods
Integrated optics is a field of study and technology that focuses on the design, fabrication, and application of optical devices and systems using integrated circuit technology. It involves the integration of various optical components, such as waveguides, couplers, modulators, detectors, and lasers, into a single substrate. One of the key advantages of integrated optics is its compatibility with electronic integrated circuits. This compatibility enables seamless integration of optical and electronic functionalities onto the same chip, allowing efficient data transfer between optical and electronic domains. This synergy is crucial for applications such as optical interconnects in high-speed communication systems, optical sensing interfaces, and optoelectronic integrated circuits. This entry presents a brief study on some of the widely used and commercially available optical platforms and fabrication methods that can be used to create photonic integrated circuits.
Journal Article