Explore the vast range of titles available.

Silicon nanowires (SiNWs) have a strong potential in many fields. The investigation of fabrication methods for SiNWs has attracted much attention in semiconductor applications. This paper proposes a metal-assisted chemical etching (MACE) method as a low-cost and simple method for fabrication of SiNWs. This method is based on the electroless metal deposition (EMD) principle. We have studied the conditions of MACE method for fabrication of SiNWs on (100) p-type silicon wafer. A 0.005 AgNO3 and 4.8 M HF solution is used for metal-assisted depositing of the silver nanodots. The etching process is achieved by etchant solution consisting of 4.8 M HF and different concentrations of H2O2. The effect of etching parameters, such as etching time, H2O2 concentration and the dipping time, are investigated. Taguchi with L9 orthogonal array is used by software package MINITAB 17 for designing the experiments. The results of scanning electron microscopy (SEM) observations shows the formation of the silicon nanowires. The effect of the different conditions on the size of the SiNWs is analyzed using S/N ratio and ANOVA approach. The results show that etching time was the most significant factor in the SiNWs fabrication.

Although Si nanowires (NWs) arrays are superior candidates for visible light photocatalysis, reports about the photodegradation activity of various crystal-orientated Si NWs are still insufficient. Here, light-doped hydrogen-terminated Si NWs arrays with different crystal orientations were prepared via a metal-assisted chemical etching method (MACE), which simply modulated the concentration of the oxidizer, H2O2. Their dye photodegradation activities were systematically and comprehensively investigated. When compared with Si NWs arrays with crystal orientations of (110) and (111), Si NWs arrays with (100) crystal orientation exhibit a superior photodegradation activity and stability due to the anisotropy of optical and physical properties. The n-type Si NWs arrays exhibit better photodegradation activity than the p-type Si NWs arrays of the same crystal orientation and similar length. The results provide a further understanding of the synthesis of Si NWs arrays with various orientations, and the relationships between photodegradation activity/stability and crystal orientations.

In this study, we developed active substrates consisting of Ag-decorated silicon nanowires on a Si substrate using a single-step Metal Assisted Chemical Etching (MACE) process, and evaluated their performance in the identification of low concentrations of Rhodamine 6G using surface-enhanced photoluminescence spectroscopy. Different structures with Ag-aggregates as well as Ag-dendrites were fabricated and studied depending on the etching parameters. Moreover, the addition of Au nanoparticles by simple drop-casting on the MACE-treated surfaces can enhance the photoluminescence significantly, and the structures have shown a Limit of Detection of Rhodamine 6G down to 10−12 M for the case of the Ag-dendrites enriched with Au nanoparticles.

Waste silicon powder produced during the production process of organosilicon materials is a major environmental concern that can lead to pollution and resource wastage. As a result, it is crucial to find efficient ways of recovering and utilizing this waste material. In this study, the morphology of waste silicon powder was systematically studied, and an optimized purification method was proposed based on a hydrometallurgical process and phase analysis. The complex composition of waste silicon powder presents a significant challenge during its recycling. However, the results of this study showed that metal-assisted chemical etching (MACE), followed by mixed acid system leaching, is the most effective method for removing impurities from the material. The superior order of different acid systems for removing metallic impurities was HCl < HF < HF + HCl < HF + H2O2 < CuACE. It is worth noting that CuACE treatment has a remarkable ability to remove more than 95% of Fe through hydrometallurgy.

Herein, we report an efficient method to produce silver (Ag) nanoparticle-decorated silicon (Si) nanowire (NW) arrays on a pyramidal Si (P-Si) substrate by using a pure chemical method and rapid thermal annealing in different atmospheres. A metal-assisted chemical etching technique was used to produce vertical Si NW arrays on pyramidal Si. The etching was observed to be heavily dependent on the substrate type. On planar Si (100), the etching was observed to occur in a uniform manner. However, the etching rate was observed to increase from the top to the base of the Si pyramid. The Si NWs produced from P-Si have zig-zag sidewalls as observed from high-resolution transmission electron microscopy images. However, for the same oxidant concentration, Si NWs produced from planar Si (100) consist of straight and amorphous sidewalls. Local variation of oxidant concentration is responsible for the formation of different sidewalls. The substrates are both surface-enhanced Raman scattering (SERS) active and hydrophobic. The hydrophobicity is due to the dual scale of roughness contributed to by both pyramidal and NW structures. Finite-difference time-domain simulation shows that the gap between two Ag spheres and also the gap between Si NWs and Ag spheres contributed to SERS enhancement.

In this study, we investigated the use of porous silicon (PSi) fabricated using metal-assisted chemical etching (MACE) as a substrate for the deposition of Au nanoparticles (NPs) for the reduction of nitroaromatic compounds. PSi provides a high surface area for the deposition of Au NPs, and MACE allows for the fabrication of a well-defined porous structure in a single step. We used the reduction of p-nitroaniline as a model reaction to evaluate the catalytic activity of Au NPs on PSi. The results indicate that the Au NPs on the PSi exhibited excellent catalytic activity, which was affected by the etching time. Overall, our results highlighted the potential of PSi fabricated using MACE as a substrate for the deposition of metal NPs for catalytic applications.

In this study, we developed highly sensitive substrates for Surface-Enhanced-Raman-Scattering (SERS) spectroscopy, consisting of silicon nanowires (SiNWs) decorated by silver nanostructures using single-step Metal Assisted Chemical Etching (MACE). One-step MACE was performed on p-type Si substrates by immersion in AgNO3/HF aqueous solutions resulting in the formation of SiNWs decorated by either silver aggregates or dendrites. Specifically, dendrites were formed during SiNWs’ growth in the etchant solution, whereas aggregates were grown after the removal of the dendrites from the SiNWs in HNO3 aqueous solution and subsequent re-immersion of the specimens in a AgNO3/HF aqueous solution by adjusting the growth time to achieve the desired density of silver nanostructures. The dendrites had much larger height than the aggregates. R6G was used as analyte to test the SERS activity of the substrates prepared by the two fabrication processes. The silver aggregates showed a considerably lower limit of detection (LOD) for SERS down to a R6G concentration of 10−13 M, and much better uniformity in terms of detection in comparison with the silver dendritic structures. Enhancement factors in the range 105–1010 were calculated, demonstrating very high SERS sensitivities for analytic applications.

High concentration ozone can damage greatly to the respiratory, cardiovascular systems, and fertility of people, and catalytic decomposition is an important strategy to reduce its harm. However, it remains a challenge to develop efficient ozone decomposition catalysts with high efficiency. In this study, p- and n-type silicon nanowires (Si NWs) are fabricated by wet chemical etching method and are firstly applied to catalytic decompose ozone at room temperature. The p-type Si NWs exhibit 90% ozone (20 ppm O 3 /air) decomposition efficiency with great stability, which is much better than that of n-type Si NWs (50%) with same crystal orientation, similar diameter and specific surface area. The catalytic property difference is mainly attributed to the more delocalization holes in the p-type Si NWs, which can accelerate the desorption of ozone decomposition intermediates (i.e., adsorbed oxygen species).

We report a robust, sidewall transfer metal assistant chemical etching scheme for fabricating Al2O3 nanotube arrays with an ultra-high aspect ratio. Electron beam lithography followed by low-temperature Au metal assisted chemical etching (MacEtch) is used to pattern high resolution, high aspect ratio, and vertical silicon nanostructures, used as a template. This template is subsequently transferred by an atomic layer deposition of the Al2O3 layer, followed by an annealing process, anisotropic dry etching of the Al2O3 layer, and a sacrificial silicon template. The process and characterization of the Al2O3 nanotube arrays are discussed in detail. Vertical Al2O3 nanotube arrays with line widths as small as 50 nm, heights of up to 21 μm, and aspect ratios up to 420:1 are fabricated on top of a silicon substrate. More importantly, such a sidewall transfer MacEtch approach is compatible with well-established silicon planar processes, and has the benefits of having a fully controllable linewidth and height, high reproducibility, and flexible design, making it attractive for a broad range of practical applications.

Metal-assisted chemical etching (MACE) of silicon is used in this study to fabricate silicon nanowire arrays (SiNWs) of different length. This method was modeled using gene expression programming (GEP), and GEP was optimized using genetic algorithms (GA). The length of SiNWs has been predicted as a function of parameters like Ag nucleation on Si and etching solution parameters. The SiNWs in the experimental test have a minimum length of 1 μm. According to FE-SEM images, SiNWs are uniformly shaped. It could be used to fabricate electrode materials for micro-supercapacitor.