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\"This book is primarily concerned with studies of electronic packaging in assembly manufacture processes and failure mechanisms in assembly manufacture processes and tests through modeling and simulation\"--

One drawback of solar and wind power is the need for an efficient storage system to release accumulated energy when neither source is readily available (during still nights, for example). Hydrogen derived from electrolysis of water is potentially a useful medium for this purpose, but catalyzing the interconversion efficiently at large scale would currently require a substantial amount of the scarce precious metal platinum. An alternative approach would be to mimic natural enzymatic reactions, which accomplish the interconversion using hydrogenases that incorporate the more abundant metals iron and nickel. In this vein, Le Goff et al. (p. 1384 ; see the Perspective by Hambourger and Moore ) have lightly modified a hydrogenase-inspired nickel complex in order to append it to a conductive carbon nanotube support. The resulting hybrid material shows promising catalytic efficiency for reversible aqueous electrolysis in a standard apparatus. A nickel electrocatalyst supported on carbon nanotubes shows promising activity for proton-hydrogen interconversion in water. Interconversion of water and hydrogen in unitized regenerative fuel cells is a promising energy storage framework for smoothing out the temporal fluctuations of solar and wind power. However, replacement of presently available platinum catalysts by lower-cost and more abundant materials is a requisite for this technology to become economically viable. Here, we show that the covalent attachment of a nickel bisdiphosphine–based mimic of the active site of hydrogenase enzymes onto multiwalled carbon nanotubes results in a high–surface area cathode material with high catalytic activity under the strongly acidic conditions required in proton exchange membrane technology. Hydrogen evolves from aqueous sulfuric acid solution with very low overvoltages (20 millivolts), and the catalyst exhibits exceptional stability (more than 100,000 turnovers). The same catalyst is also very efficient for hydrogen oxidation in this environment, exhibiting current densities similar to those observed for hydrogenase-based materials.

Moore’s Law is a techno-economic model that has enabled the information technology industry to double the performance and functionality of digital electronics roughly every 2 years within a fixed cost, power and area. Advances in silicon lithography have enabled this exponential miniaturization of electronics, but, as transistors reach atomic scale and fabrication costs continue to rise, the classical technological driver that has underpinned Moore’s Law for 50 years is failing and is anticipated to flatten by 2025. This article provides an updated view of what a post-exascale system will look like and the challenges ahead, based on our most recent understanding of technology roadmaps. It also discusses the tapering of historical improvements, and how it affects options available to continue scaling of successors to the first exascale machine. Lastly, this article covers the many different opportunities and strategies available to continue computing performance improvements in the absence of historical technology drivers. This article is part of a discussion meeting issue ‘Numerical algorithms for high-performance computational science’.

CD-ROM contains: free student version of PSpice 9.2 Lite Edition (SPICE simulator) and new industry-based design examples.

A nanoscale molecular switch can be used to store information in a single molecule. Although the switching process can be detected electrically in the form of a change in the molecule′s conductance, adding spin functionality to molecular switches is a key concept for realizing molecular spintronic devices. Here we show that iron-based spin-crossover molecules can be individually and reproducibly switched between a combined high-spin, high-conduction state and a low-spin, low-conduction state, provided the individual molecule is decoupled from a metallic substrate by a thin insulating layer. These results represent a step to achieving combined spin and conduction switching functionality on the level of individual molecules. Switches made up of single molecules form the basis for the concept of molecular electronics. Miyamachi et al. demonstrate that an iron-based spin crossover molecule can be switched between different spin states, provided it is decoupled from a metallic substrate by a thin insulating layer.

Taking aim at silicon Silicon transistors in microelectronics are shrinking to close to the size at which quantum effects begin to have an impact on device performance. As silicon looks certain to remain the semiconductor material of choice for a while yet, such effects may be turned into an advantage by designing silicon devices that can process quantum information. One approach is to make use of electron spins generated by phosphorus dopant atoms buried in silicon, as they are known to represent well-isolated quantum bits (qubits) with long coherence times. It has not been possible to control single electrons in silicon with the precision for qubits, but now Andrea Morello and colleagues report single-shot, time-resolved readout of electron spins in silicon. This is achieved by placing the phosphorus donor atoms near a charge-sensing device called a single-electron transistor, which is fully compatible with current microelectronic technology. The demonstrated high-fidelity single-shot spin readout opens a path to the development of a new generation of quantum computing and spintronic devices in silicon. Electron spins generated by phosphorus dopant atoms buried in silicon represent well-isolated quantum bits with long coherence times, but so far the control of such single electrons has been insufficient to use them in this way. These authors report single-shot, time-resolved readout of electron spins in silicon, achieved by coupling the donor atoms to a charge-sensing device called a single-electron transistor. This opens a path to the development of a new generation of quantum computing and spintronic devices in silicon. The size of silicon transistors used in microelectronic devices is shrinking to the level at which quantum effects become important 1 . Although this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers 2 , 3 , 4 and spintronic devices 5 . An electron spin in silicon can represent a well-isolated quantum bit with long coherence times 6 because of the weak spin–orbit coupling 7 and the possibility of eliminating nuclear spins from the bulk crystal 8 . However, the control of single electrons in silicon has proved challenging, and so far the observation and manipulation of a single spin has been impossible. Here we report the demonstration of single-shot, time-resolved readout of an electron spin in silicon. This has been performed in a device consisting of implanted phosphorus donors 9 coupled to a metal-oxide-semiconductor single-electron transistor 10 , 11 —compatible with current microelectronic technology. We observed a spin lifetime of ∼6 seconds at a magnetic field of 1.5 tesla, and achieved a spin readout fidelity better than 90 per cent. High-fidelity single-shot spin readout in silicon opens the way to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.