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"Millimeter wave devices Design and construction."
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RF and mm-Wave Power Generation in Silicon
This book presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies.
eBook
A Leaky-Wave Analysis of Resonant Bessel-Beam Launchers: Design Criteria, Practical Examples, and Potential Applicationsat Microwave and Millimeter-Wave Frequencies
Resonant Bessel-beam launchers are low-cost, planar, miniaturized devices capable of focusing electromagnetic radiation in a very efficient way in various frequency ranges, with recent increasing interest for microwave and millimeter-wave applications (i.e., 3–300 GHz). In recent years, various kinds of launchers have appeared, with different feeding mechanisms (e.g., coaxial probes, resonant slots, or loop antennas), field polarization (radial, azimuthal, and longitudinal), and manufacturing technology (axicon lenses, radial waveguides, or diffraction gratings). In this paper, we review the various features of these launchers both from a general electromagnetic background and a more specific leaky-wave interpretation. The latter allows for deriving a useful set of design rules that we here show to be applicable to any type of launcher, regardless its specific realization. Practical examples are discussed, showing a typical application of the proposed design workflow, along with a possible use of the launchers in a modern context, such as that of wireless power transfer at 90 GHz.
Journal Article
A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications
In this work, we present a transceiver front-end in SiGe BiCMOS technology that can provide an ultra-wide bandwidth of 100 GHz at millimeter-wave frequencies. The front-end utilizes an innovative arrangement to efficiently distribute broadband-generated pulses and coherently combine received pulses with minimal loss. This leads to the realization of a fully integrated ultra-high-resolution imaging chip for biomedical applications. We realized an ultra-wide imaging band-width of 100 GHz via the integration of two adjacent disjointed frequency sub-bands of 10–50 GHz and 50–110 GHz. The transceiver front-end is capable of both transmit (TX) and receive (RX) operations. This is a crucial component for a system that can be expanded by repeating a single unit cell in both the horizontal and vertical directions. The imaging elements were designed and fabricated in Global Foundry 130-nm SiGe 8XP process technology.
Journal Article
Synthesis of Quadband mm-Wave Microstrip Antenna Using Genetic Algorithm for Wireless Application
Antennas with multifunctional capabilities integrated into a single device that demonstrates a high performance are in demand, and microstrip antennas with quadband coverage are very useful for a wide range of mm-wave applications. Antennas and propagation at mm-wave frequencies, on the other hand, poses several challenges which can be overcome by applying performance enhancement techniques to meet design objectives. This article presents the use of a binary-coded genetic algorithm for developing an improved quadband mm-wave microstrip patch antenna. The patch shape was optimized by dividing a conducting surface into 6 × 6 tiny rectangular blocks. The algorithm generated the solution space by introducing conducting and nonconducting features for each radiating cell on the patch surface and then greedily searched for the best-fitted individual based on the cost function. With the combination of High-Frequency Structure Simulator (HFSS) and MATLAB, candidate antennas were iteratively modeled by applying the suggested algorithm. The optimized antenna resonated at four frequencies centered at 28.3 GHz, 38.1 GHz, 46.6 GHz, and 60.0 GHz. The antenna realized a peak broadside directivity of 7.8 dB, 8.8 dB, 7.3 dB, and 7.1 dB, respectively, with a total operating bandwidth of 11.5 GHz. The research findings were compared with related works presented in the literature and found that the optimized antenna outperformed them in terms of bandwidth, directivity, and efficiency.
Journal Article
Reconfigurable Millimeter-Wave Components Based on Liquid Crystal Technology for Smart Applications
This paper presents recent development of tunable microwave liquid crystal (LC) components in the lower millimeter wave (mmW) regime up to the W-band. With the utilization of increasing frequency, conventional metallic waveguide structures prove to be impractical for LC-based components. In particular, the integration of the electric bias network is extremely challenging. Therefore, dielectric waveguides are a promising alternative to conventional waveguides, since electrodes can be easily integrated in the open structure of dielectric waveguides. The numerous subcategories of dielectric waveguides offer a high degree of freedom in designing smart millimeter wave components such as tunable phase shifters, filters and steerable antennas. Recent research resulted in many different realizations, which are analyzed in this paper. The first demonstrators of phased array antennas with integrated LC-based phase shifters are reviewed and compared. In addition, beam steering with a single antenna type is shown. Furthermore, the possibility to realize tunable filters using LC-filled dielectric waveguides is demonstrated.
Journal Article
Miniaturized Lens Antenna with Enhanced Gain and Dual-Focusing for Millimeter-Wave Radar System
This paper presents a waveguide Lens antenna at the W-band adopting dual-focusing Lens to improve the performance. The Lens antenna consisted of a waveguide slotted structure and lenses processed using NOA73 meet the demands of miniaturization for current communication systems. The antenna radome fabricated using NOA73 not only protects the antenna structure but also improves the gain of the antenna by about 9.5 dBi via electromagnetic wave dual-focusing. A prototype is fabricated using novel UV-LIGA technology. Measured results are compared with simulated values. Measured results confirmed the fabricated antenna operated in the W-band with a 10 dB fractional bandwidth (FBW) of 6.5% from 97.5 to 104 GHz and a peak gain of 22 dBi at 100 GHz in the direction perpendicular to the plane of the feed waveguide. A good agreement between simulation and measurement is obtained, demonstrating efficient radiations in the operating band.
Journal Article
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements
The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. Over the years, much effort has been spent on measurement-based modeling since accurate models are essential for allowing the use of this advanced transistor technology at its best. The present analysis is focused on the modeling of the scattering (S-) parameter measurements for a 0.25 μm GaN HEMT on silicon carbide (SiC) substrate at extreme operating conditions: a large gate width (i.e., the transistor is based on an interdigitated layout consisting of ten fingers, each with a length of 150 μm, resulting in a total gate periphery of 1.5 mm), a high ambient temperature (i.e., from 35 °C up to 200 °C with a step of 55 °C), a high dissipated power (i.e., 5.1 W at 35 °C), and a high frequency in the millimeter-wave range (i.e., from 200 MHz up to 65 GHz with a step of 200 MHz). Three different modeling approaches are investigated: the equivalent-circuit model, artificial neural networks (ANNs), and gated recurrent units (GRUs). As is shown, each modeling approach has its pros and cons that need to be considered, depending on the target performance and their specifications. This implies that an appropriate selection of the transistor modeling approach should be based on discerning and prioritizing the key features that are indeed the most important for a given application.
Journal Article
Substrate-Integrated Coaxial Line (SICL) Rotman Lens Beamformer for 5G/B5G Applications
High-band allocations in the millimeter-wave (mm-Wave) frequency spectrum offer high-capacity wireless information transmission as required by fifth generation (5G) communication standards. Among different beamforming structures, the Rotman lens (RL) is an attractive passive-microwave-lens-based beamforming network due to its low fabrication cost, reliability, design simplicity and wide-angle scanning capabilities. Conventionally, the RL is implemented using microstrip line (MSL) technology for which there are inherent radiation losses that become severe when operating in mm-Wave 5G frequency bands. In this context, a novel substrate-integrated coaxial line (SICL)-based RL is designed, fabricated and tested, for accurate beamforming with extremely low feed line insertion loss. This article presents a complete design, development and performance analysis of an SICL-based RL beamformer. By using an SICL, isolation of up to 15 dB is achieved between the input beam ports of the RL, while the mutual coupling is kept at less than 20 dB. The SICL design shows a −10 dB insertion loss between the array and beam ports when compared to the same RL developed using MSL technology having an insertion loss of −15 dB. Due to the use of low-loss SICL technology, a realized gain of up to 14.2 dBi is achieved with an excellent scanning capability of −30 to 30 degrees, verifying for the first time the beamforming capabilities associated with SICL technology. The operational frequency band is 20–45 GHz, while the center operating frequency is 26 GHz making it appropriate for above 6-GHz 5G New Radio (NR) operating bands n257 (26.5 GHz to 29.5 GHz), n258 (24.25 GHz to 27.5 GHz), n261 (27.5 GHz to 28.35 GHz) and n260 (37 GHz to 40 GHz). Owing to the low-loss and stable beamforming performance, the SICL RL is suitable for mm-Wave 5G and is extendable to B5G applications.
Journal Article